HYPERABRUPT Search Results

HYPERABRUPT

Contextual Info: Abrupt and hyperabrupt junctions The abruptness of a junction refers to the rate of change n along the diode's C-V curve, i.e. the junction ca p a c ita n c e versus the applied voltage. If n ~ 0,5, the junction is a b r u p t; if n > 0,5, the junction is hyperabrupt.

Q62702B

Abstract: marking 34 diode
Contextual Info: SIEMENS BBY 51-02W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation • For VCO’s in mobile communications equipment Type Marking Ordering Code Pin Configuration

Q62702B

Abstract: siemens diode
Contextual Info: SIEMENS BBY 55-02W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation for V C O ’s in mobile communications equipment • Very low capacitance spread

GVD30503-001

Contextual Info: Preliminary Data - January 1999 GVD30500 SERIES SPRAGUE-GOODMAN ELECTRONICS. INC. WIDEBAND HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • • • • • • Reverse breakdown voltage at 10 pA DC at 25°C: 25 V min Maximum reverse leakage current (at -20 V) at 25“C: 0.05 pA DC

silicon epitaxial mesa diode

Abstract: GVD1404-001
Contextual Info: Preliminary Data - January 1999 GVD1400 SERIES SPRAfilli-GOODMAN ELECTRONICS, INC. SUPER HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • • • • • • • Reverse breakdown voltage at 10 pA DC at 25°C: 12 V min Maximum reverse leakage current (at -10 V) at 25°C: 0.05 pA DC

Contextual Info: Preliminary Data - January 1999 GVD30600 SERIES SPRAGIH-GOODMAN ELECTRONICS, INC. W IDEBAND HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS « Mesa Epitaxial Silicon Construction • Silicon Dioxide Passivated > Superior Wide Range Linear Characteristics

Contextual Info: DATA SHEET SMV121x Series: Hyperabrupt Junction Tuning Varactors Applications • Low tuning voltage VCOs  High-volume commercial systems Features  High capacitance ratio: C1V/C4V = 5 typical  Packages rated MSL1, 260 °C per JEDEC J-STD-020 Description

varactor diode

Contextual Info: Hyperabrupt Varactor Diode Outline Drawing Features: • ■ ■ VHF to UHF Operation Linear Octave Tuning from 3 to 20 volts Surface Mountable SOT-23 Package Outline - Single diode SMV1200-04A - Two diodes back to back (SMV1200-04B) High Reliability ■

DKV3803-55

Contextual Info: Silicon Hyperabrupt Tuning Diodes DKV6550 Series Features • ■ Octave Frequency Tuning from 0 to 10 Volts ±1.5% Linearity for a 1.7:1 Tuning Ratio without Compensation Network Types DKV6550 CKV2010 DKV3801 DKV3802 DKV3803 DKV3804 Description Alpha microwave hyperabrupt diodes are designed

diode oat

Contextual Info: Hyperabrupt Varactor Diode Outline Drawing Features: • ■ ■ ■ ■ V H F and UHF Operation Low Series Resistance Surface mountable S O T-23 Package - Single diode SM V1204-60A - Two diodes back to back (S M V 1204-60B ) Linear Tuning from 0 to 6 volts. Ideal

VR1j

Abstract: SMV1200
Contextual Info: Varactor Diodes Hyperabrupt Varactors for General Wide Band Applications Single and Common Cathode Reverse Breakdown Voltage, V B (10 |aA): Reverse Leakage Current, lR (16V): 20V Minimum 50 nA Maximum r Part Number SMV1200-04 min max 10.5 12.5 Q VR1j

smv1204-12

Contextual Info: Hyperabrupt Varactor Diode Outline Drawing: Features: • V H F Tuning ■ Octave tuning from 0 to 6 volts. Ideal in VXC O , TC X O and other frequency control applications using limited bias range. ■ Surface mountable S O T-23 Package ■ Competitively priced, readily available

Contextual Info: DATA SHEET SMVA1470-004LF: Hyperabrupt Junction Tuning Varactor Automotive Applications • Low-noise VCOs and VCXOs in wireless systems  Infotainment  Navigation  Telematics  Garage door openers  Wireless control systems Description Features

Contextual Info: SIEMENS BBY 58-04W . BBY 58-06W Silicon Tunig Diodes Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • For low frequency control elements

SMV2019-108

Abstract: SMV1206-108 SMV1206 SMV1405 SMV2019
Contextual Info: DATA SHEET Silicon Tuning Varactors in Hermetic Surface Mount Package Applications  V COs l V oltage tuned filters l Features l  l  l l  l l  l S ilicon abrupt and hyperabrupt devices available H  ermetic ceramic package, 1.83 x 1.43 x 1.0 mm

AF3 SOT23

Abstract: varactors SMV1247 SMV1247-074 SMV1247-079LF SMV1255 SMV1253-079LF
Contextual Info: DATA SHEET SMV1247-SMV1255 Series: Hyperabrupt Junction Tuning Varactors Applications x Low tuning voltage VCOs x High-volume commercial systems Features x High capacitance ratio: C0.3V/C4.7V = 12 typical x Packages rated MSL1, 260 °C per JEDEC J-STD-020

coaxial resonator, skyworks

Abstract: SMV2019 SMV2019-000 SMV2019-240 SMV2020-000 SMV2020-240 SMV2021-000 SMV2022-000 SMV2023 SMV2023-000
Contextual Info: data sheet SMV2019 to SMV2023: Silicon Hyperabrupt Junction Varactors, Packaged and Bondable Planar Chips Applications l Voltage controlled oscillators Features High Q for low loss resonators Low leakage current l High tuning ratio for wideband VCOs l SPICE model parameters

SMV1145-011LF

Abstract: SMV1145-079LF marking GU
Contextual Info: DATA SHEET SMV114x Series: Hyperabrupt Junction Tuning Varactors Applications x High volume commercial systems Features x Frequency linear design x Low series resistance x Packages rated MSL1, 260 °C per JEDEC J-STD-020 Skyworks offers lead Pb -free, RoHS (Restriction of

SMV1265

Abstract: CT26 S1619 SMV1265-011LF
Contextual Info: DATA SHEET SMV1265-011LF Hyperabrupt Junction Tuning Varactor Applications x Wideband RF and microwave VCOs x Analog phase shifters x Digital TV tuners Features x High tuning ratio x Low series resistance x Designed for high volume, low-cost applications x Small footprint SOD-323 1.60 x 1.15 mm package (MSL1,

SMV1139

Abstract: S1672 SMV1129 SMV1129-079LF
Contextual Info: DATA SHEET SMV1129 and SMV1139 Hyperabrupt Junction Tuning Varactors Applications x Low phase noise VCOs x High-Q tuning elements in wireless system LOs Features x High-Q x Low series resistance for low phase noise x Packages rated MSL1, 260 °C per JEDEC J-STD-020

MSV1201-97-001

Abstract: MSV1204-11-001 MSV1204-12-001 MSV1204-13-001 MSV1204-14-001 MSV1204-15-001 MSV1204-22-001 MSV1204-23-001 MSV1204-24-001 MSV1204-25-001
Contextual Info: Commercial Diodes Commercial Diodes: MSV-1200 Series Hyperabrupt Varactors Single and Common Cathode Oscillator Applications VCXOs and TCXOs Description The MicroMetrics Hyperabrupt Varactors come in a wide variety of capacitance values and high capacitance ratios. These devices are available in single junction, common anode

Contextual Info: 1N5142 asi TUNING VARACTOR DIODE DESCRIPTION: The 1N5142 is a Silicon HyperAbrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA -nrB MAXIMUM RATINGS - 250 mA If Vr 60 V P diss 400 mW @ TA = 25 °C Tj -65 °C t o +175 °C T stg -65 °C to +200 °C

MGV-100-20

Abstract: MGV-125-20 MGV-125-22 MGV-125-25 MGV-100-21 MGV-075-10 MCE Metelics MGV-100-20 MGV-100-23 MA46471 MA46472
Contextual Info: GaAs Hyperabrupt Tuning Varactors FEATURES PACKAGE STYLES • Constant Gamma 0.75, 1.00, or 1.25 over a wide tuning ratio • High Q • Linear Frequency Tuning • Stable performance in High Reliability environment • Available in Packaged and Chip Form

KV2101

Abstract: KV2101A
Contextual Info: KV2101A SILICON HYPERABRUPT TUNING VARACTOR PACKAGE STYLE DO-7 DESCRIPTION: The ASI KV2101A is a Silicon Hyperabrupt Tuning Varactor Diode Designed for UHF Applications up to 800 MHz.The Cathode is Indicated by a Color Band. MAXIMUM RATINGS IF 40 mA VR 22 V