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    hym72v2005gu-50 Datasheets

    hym72v2005gu-50 datasheet (2)

    Part ECAD Model Manufacturer Description Type PDF
    HYM72V2005GU-50 Siemens 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module Original PDF
    HYM72V2005GU-50 Siemens 168pin unbuffered DIMM Module with serial presence detect Scan PDF

    hym72v2005gu-50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    530 24c02

    Abstract: No abstract text available
    Text: Dual In-Line Memory Module 1 bank 2M x 64, 2M x 72 organisation HYM64V2005GU- 50 /-60/-70 HYM72V2005GU-50 , ) Performance: - 50 ¿ R A C ^ C A C ^ A A l ftC lH P C RAS Access Time CAS Access Time Access Time from Address Cycle Time EDO Mode Cycle Time 50 ns 13 ns 25 ns 84 ns 20 ns -60 60 ns 15 ns 30 ns -70 70 ns 20 ns 35 ns , SIEMENS HYM 64(72)V2005GU- 50 /-60/-70 2M X 64/72 DRAM Module The HYM64(72)V2005GU- 50 /-60/-70 are , long spacesaving footprint. Ordering Information Type HYM 64V 2005G U - 50 HYM 64V 2005G U -60 HYM 64V


    OCR Scan     		PDF 64-Bit 72-Bit 168pin HYM64V2005GU-50/-60/-70 HYM72V2005GU-50/-60/-70 V2005GU-50/-60/-70 530 24c02

    1996 - 16811

    Abstract: No abstract text available
    Text: 3.3V 2M × 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module HYM64V2005GU- 50 /-60/-70 HYM72V2005GU-50 /-60/-70 168pin unbuffered DIMM Module with serial presence detect Target Information · , ) · Performance: - 50 -60 -70 tRAC RAS Access Time 50 ns 60 ns 70 ns tCAC , Semiconductor Group 1 3.96 HYM 64(72)V2005GU- 50 /-60/-70 2M x 64/72 DRAM Module The HYM64(72)V2005GS- 50 /-60/-70 are industry standard 168-pin 8-byte Dual In-Line Memory Modules (DIMMs) which are


    Original     		PDF 64-Bit 72-Bit HYM64V2005GU-50/-60/-70 HYM72V2005GU-50/-60/-70 168pin V2005GU-50/-60/-70 L-DIM-168-11 DM168-11 16811

    530 24c02

    Abstract: SDA 5577
    Text: SIEMENS 3.3V 2M x 64-Bit EDO-DRAM Module HYM64V2005GU- 50 /-60/-70 3.3V 2M x 72-Bit EDO-DRAM Module HYM72V2005GU-50 /-60/-70 168pin unbuffered DIMM Module with serial presence detect Preliminary , Out (EDO) • Performance: - 50 -60 -70 'rac RAS Access Time 50 ns 60 ns 70 ns 'CAC CAS Access , Manufacturer SIEMENS HYM 64(72)V2005G U- 50 /-60/-70 * 2M x 64/72 DRAM Module The HYM64(72)V2005GU- 50 /-60/-70 , Descriptions HYM 64V2005GU-50 on request L-DIM-168-11 2M x 64 DRAM module (access time 50 ns) HYM


    OCR Scan     		PDF 64-Bit HYM64V2005GU-50/-60/-70 72-Bit HYM72V2005GU-50/-60/-70 168pin E3Sb05 V2005G U-50/-60/-70 A235b05 530 24c02 SDA 5577

    Not Available

    Abstract: No abstract text available
    Text: SIEMENS 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module HYM64V2005GU- 50 /-60/-70 HYM72V2005GU-50 /-60/-70 168pin unbuffered DIMM Module with serial presence detect , €¢ Extended Data Out (EDO) • Performance: - 50 ¿A RC -60 -70 50 ns RAS Access Time 60 ns , 0235bDS GDñSSbS ñ?b 6.96 SIEMENS HYM 64(72)V2005GU- 50 /-60/-70 2M X 64/72 DRAM Module The HYM64(72)V2005GU- 50 /-60/-70 are industry standard 168-pin 8-byte Dual In-Line Memory Modules (DIMMs


    OCR Scan     		PDF 64-Bit 72-Bit HYM64V2005GU-50/-60/-70 HYM72V2005GU-50/-60/-70 168pin A23SbDS V2005GU-50/-60/-70

    Not Available

    Abstract: No abstract text available
    Text: SIEMENS 3.3V 2M X 64-Bit EDO-DRAM Module 3.3V 2M X 72-Bit EDO-DRAM Module HYM64V2005GU- 50 /-60/-70 HYM72V2005GU-50 /-60/-70 168pin unbuffered DIMM Module with serial presence detect , applications • Extended Data Out (EDO) • Performance: - 50 -60 -70 tR A C RAS A ccess Tim e 50 ns 60 ns 70 ns tC A C C AS A ccess Tim e 13 ns 15 ns 20 ns tA , 11.96 HYM 64(72)V2005GU- 50 /-60/-70 2M X 64/72 DRAM Module The HYM64(72)V2005GU- 50 /-60/-70 are


    OCR Scan     		PDF 64-Bit 72-Bit HYM64V2005GU-50/-60/-70 HYM72V2005GU-50/-60/-70 168pin V2005GU-50/-60/-70 L-DIM-168-11

    1998 - Q67100-Q2180

    Abstract: Q67100-Q2181 Q67100-Q2182 GU50
    Text: 3.3V 2M × 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module HYM64V2005GU- 50 /-60 HYM72V2005GU-50 /-60 168pin unbuffered DIMM Module with serial presence detect · 168 Pin JEDEC , Extended Data Out (EDO) · Performance: - 50 -60 tRAC RAS Access Time 50 ns 60 ns , 64(72)V2005GU- 50 /-60 2M x 64/72 DRAM Module The HYM64(72)V2005GU- 50 /-60 are industry standard 168 , 64V2005GU-50 Q67100-Q2180 L-DIM-168-11 2M x 64 DRAM module (access time 50 ns) HYM 64V2005GU-60


    Original     		PDF 64-Bit 72-Bit HYM64V2005GU-50/-60 HYM72V2005GU-50/-60 168pin CAS-before01 V2005 GU-60 V2005GU-50/-60 L-DIM-168-11 Q67100-Q2180 Q67100-Q2181 Q67100-Q2182 GU50

    1997 - GU50

    Abstract: Q67100-Q2182 Q67100-Q2181 Q67100-Q2180
    Text: 3.3V 2M × 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module HYM64V2005GU- 50 /-60 HYM72V2005GU-50 /-60 168pin unbuffered DIMM Module with serial presence detect Advanced Information · , ) · Performance: - 50 -60 tRAC RAS Access Time 50 ns 60 ns tCAC CAS Access , 168pin unbuffered SDRAM DIMM module family Semiconductor Group 1 2.97 HYM 64(72)V2005GU- 50 /-60 2M x 64/72 DRAM Module The HYM64(72)V2005GU- 50 /-60 are industry standard 168-pin 8-byte Dual


    Original     		PDF 64-Bit 72-Bit HYM64V2005GU-50/-60 HYM72V2005GU-50/-60 168pin refresh08 V2005 GU-60 V2005GU-50/-60 L-DIM-168-11 GU50 Q67100-Q2182 Q67100-Q2181 Q67100-Q2180

    SIEMENS 3 TB 40 12 - 0A

    Abstract: SIEMENS 3 TB 40 17 - 0A SIEMENS 3 TB 40 10 - 0A SIEMENS 3 TB 40 17 - 0B Q67100-Q2182
    Text: Module with serial presence detect HYM64V2005GU- 50 /-60 HYM72V2005GU-50 /-60 · 168 Pin JE D E C Standard , Performance: - 50 tR A C tC A C tAA tR C tH P C R A S A ccess Time C A S A ccess Time A ccess Time from Address Cycle Time E D O Mode C ycle Time 50 ns 13 ns 25 ns 84 ns 20 ns -60 60 ns 15 ns 30 ns 104 ns 25 ns , unbuffered SD RAM DIMM module family Semiconductor Group 1 2.97 SIEMENS HYM 64(72)V2005GU- 50 /-60 2M X 64/72 DRAM Module The HYM64(72)V2005GU- 50 /-60 are industry standard 168-pin 8-byte Dual


    OCR Scan     		PDF 64-Bit 72-Bit 168pin HYM64V2005GU-50/-60 HYM72V2005GU-50/-60 V2005GU-50/-60 L-DIM-168-11 1111nn DM188-11 SIEMENS 3 TB 40 12 - 0A SIEMENS 3 TB 40 17 - 0A SIEMENS 3 TB 40 10 - 0A SIEMENS 3 TB 40 17 - 0B Q67100-Q2182

    2002 - BRX71-03...-50

    Abstract: CGS+HSA+50 50/1N6400 50/KBA500
    Text: IMPED. IN/OUT (Ohms) 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50


    Original     		PDF

    A/2Y0A21 F 73

    Abstract: No abstract text available
    Text: 7.3 73 7.3 7.3 7.3 7.3 7.3 10.0 10.0 10.0 10 0 to o 10 0 H 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 50 5.0 5.0 5.0 50 5.5 5.5 5.5 65 6.5 7.0 8.0 8.0 8.0 9.5 9.5 95 , .3.5 4.0 4.3 4.3 4.8 5.0 5.5 5.8 65 65 75 5 6.5 6.5 7.0 7.0 8.0 P 5.0 5.0 5.0 5.0 5.0 50 50 5.0 50 50 5.0 5.0 5.0 5.0 5.0 5.0 5.0 50 5.0 5.0 5.0 50 50 0 0 75 75 75 7.5 7.5 7.5 F 5.0 5.0 5.0 5.0 50 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0


    OCR Scan     		PDF 103to335F-5 A/2Y0A21 F 73

    2002 - mt3514

    Abstract: mt2502 KBPC606 ASEA+EG+10 B250C500 b40c3700 B40C500 B500C1000 B80-C zener+diode+phc+10
    Text: 40 30 30 30 30 30 5.0 5.0 5.0 5.0 5.0 0.5 0.5 0.5 0.5 0.5 1.0 1.0 1.0 1.0 1.0 0.8 AMPERES / WOB B40C800 B80C800 B125C800 B250C800 B380C800 B500C800 100 200 300 600 900 1200 0.8 0.8 0.8 0.8 0.8 0.8 50 50 50 50 50 50 45 45 45 45 45 45 10 10 10 10 10 10 0.8 0.8 0.8 0.8 0.8 0.8 1.0 1.0 1.0 1.0 1.0 1.0 , 1.0 1.0 1.0 1.0 1.0 1.0 50 50 50 50 50 50 45 45 45 45 45 45 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 AMPERES / DIL DF005 DF01 DF02 DF04 DF06 DF08 DF10 50 100 200 400 600


    Original     		PDF B40C800 B80C800 B125C800 B250C800 B380C800 B500C800 45osed KBPC5000GS KBPC5001GS KBPC5002GS mt3514 mt2502 KBPC606 ASEA+EG+10 B250C500 b40c3700 B40C500 B500C1000 B80-C zener+diode+phc+10

    2002 - diode Marking H27

    Abstract: 50/Y496
    Text: Temperature Coefficient z (%/ C) 50 Zener Voltage Temperature Coefficient z (mV/ C) 500 5mm 2.5 mm , ­0.06 ­0.08 ­0.10 0 5 200 100 ­ 50 10 15 20 25 30 35 40 Zener Voltage VZ (V) 0 0 50 100 150 , 4.4 TEST CURRENT I ZT mA 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 Dynamic Resistance rd (Max) OHMS 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 IZ mA 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0


    Original     		PDF J-STD-020C diode Marking H27 50/Y496

    2002 - Not Available

    Abstract: No abstract text available
    Text: 0.10 Zener Voltage Temperature Coefficient z (%/ C) 50 40 30 20 mV/ C 10 0 ­10 ­20 ­30 ­40 0 5 ­ 50 , ­0.10 200 100 0 0 50 100 150 Ambient Temperature Ta ( C) 200 Fig.2 Temperature Coefficient , 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 TEST CURRENT I ZT mA 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 Dynamic Resistance rd (Max) OHMS 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 IZ mA 5.0 5.0


    Original     		PDF LSH36 LSH16 LSH30 LSH12 LSH20 LSH24

    2002 - Zener diode MARKING H5

    Abstract: No abstract text available
    Text: Temperature Coefficient z (%/ C) 50 Zener Voltage Temperature Coefficient z (mV/ C) 500 5mm 2.5 mm , ­0.06 ­0.08 ­0.10 0 5 200 100 ­ 50 10 15 20 25 30 35 40 Zener Voltage VZ (V) 0 0 50 100 150 , CURRENT I ZT mA 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 Dynamic Resistance rd (Max) OHMS 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 IZ mA 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0


    Original     		PDF

    2003 - mb101

    Abstract: No abstract text available
    Text: Maximum Forward Voltage @ 25°C TL* IFM A VFM V Package Through Hole Bridge Rectifiers MB05M 50 40 MB1M 100 40 MB2M 200 40 MB4M 400 0.5 40 MB6M 600 40 MB8M 800 40 MB10M 1000 40 DB101 50 40 DB102 100 40 DB103 200 40 DB104 400 40 DB105 600 40 DB106 800 40 DB107 1000 40 1.0 HDB101G 50 40 HDB102G 100 40 HDB103G 200 40 HDB104G 400 40 HDB105G 600 40 HDB106G 800 40 HDB107G 1000 40 RB151 50 25 RB152 100 25 RB153 200 25 RB154 400 25 RB155 600 25 RB156 800 25 RB157 1000 25 W005G 50 50 W01G 100 50 W02G 200 50 1.5


    Original     		PDF MB05M MB10M DB101 DB102 DB103 DB104 DB105 DB106 DB107 HDB101G mb101

    UF107

    Abstract: UF302 diode UF103 UF303 UF307 DIODE HER306 APPLICATION DIODE HER306 DO27 diode her205 UF207
    Text: Package time V A °C A µA A V HER101 50 1.0 50 30 5.0 1.0 1.0 50 DO-41 HER102 100 1.0 50 30 5.0 1.0 1.0 50 DO-41 HER103 200 1.0 50 30 5.0 1.0 1.3 50 DO-41 HER104 300 1.0 50 30 5.0 1.0 1.3 50 DO-41 HER105 400 1.0 50 30 5.0 1.0 1.3 50 DO-41 HER106 600 1.0 50 30 5.0 1.0 1.85 70 DO-41 HER107 800 1.0 50 30


    Original     		PDF HER101 DO-41 HER102 HER103 HER104 HER10 D0-41 UF107 UF302 diode UF103 UF303 UF307 DIODE HER306 APPLICATION DIODE HER306 DO27 diode her205 UF207

    2007 - am1580

    Abstract: AU-1433 AU-1467 AM-1607-3000 AM-1358 au1345 AM-1616 AM-1610 microwave product catalog AU-1350
    Text: amplifiers must be terminated in 50 ohms at all times. SECOND AND THIRD ORDER INTERCEPT POINTS The third , Humidity .Up to 95% at 40° noncondensing Vibration.1.0 ­ 3.0 g's rms, 5 Hz ­ 50 kHz random, basic , duration pulses up to 50 W. AC POWER SUPPLY (100 to 240 VAC, 47 ­ 440 Hz). Add Suffix "-1179" Available as , (in degrees Kelvin) of a 50 termination at the input of an ideal noiseless amplifier with the same , microwave systems are designed around a 50 impedance system. An amplifier's impedance is designed to be as


    Original     		PDF

    2004 - BC548 BH

    Abstract: BC547 NPN Transistor BC547B npn bc338 signal transistor transistor MPSA77 BC546B SOT23 transistor low noise pnp
    Text: CMPT3904E CMPT4401 80 75 80 40 6.0 6.0 6.0 6.0 6.0 6.0 100 10 10 50 * 50 * 100* 80 60 60 30 30 35 100 100 100 , 5.0 10 10 1.0 1.0 1.0 150 1.0 150 150 10 0.4 1.0 100 500 500 50 50 500 6.0 8.0 8.0 4.0 4.0 6.5 150 300 300 300 300 250 4.0 4.0 5.0 4.0 285 285 250 250 255 100 60 60 60 45 40 40 40 0.5 0.3 , 5.0 5.0 5.0 5.0 100 10 10 50 * 50 * 100* 80 50 50 30 30 35 100 100 100 100 100 100 300 300 300 300 300 300 5.0 10 10 1.0 1.0 2.0 1.0 150 150 10 10 150 0.4 1.6 100 500 500 50 50 500 4.5 8.0 8.0 4.5 4.0 8.5


    Original     		PDF OT-23 350mW CMPT8099 CMPT2222A CMPT2222AE CMPT3904 CMPT3904E CMPT4401 BC548 BH BC547 NPN Transistor BC547B npn bc338 signal transistor transistor MPSA77 BC546B SOT23 transistor low noise pnp

    2002 - Not Available

    Abstract: No abstract text available
    Text: ±0.25 pF /±2% /±2% ±2% /±2% 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 6.5 6.5 7.5 8.5 11.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 6.5 7.5 7.5 8.5 , Product information 5.0 5.0 5.0 5.0 5.0 6.5 7.5 8.5 10.0 11.0 12.0 ±0.25 pF ±0.25 pF /±2% /±2% /±2% 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 6.5 7.5 8.5 10.0 12.0 ±0.25 pF /±2% 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 6.5


    Original     		PDF N1500

    2003 - Not Available

    Abstract: No abstract text available
    Text: Hole High Efficient Rectifiers HER101S 50 55 HER102S 100 55 HER103S 200 55 HER104S 300 55 HER105S 400 55 HER106S 600 55 HER107S 800 55 HER108S 1000 55 EGP10A 50 55 EGP10B 100 55 EGP10D 200 55 1.0 EGP10F 300 55 EGP10G 400 55 EGP10J 600 55 EGP10K 800 55 HER101 50 55 HER102 100 55 HER103 200 55 HER104 300 55 HER105 400 55 HER106 600 55 HER107 800 55 HER151 50 55 HER152 100 55 HER153 200 55 HER154 300 55 1.5 HER155 400 55 HER156 600 55 HER157 800 55 HER158 1000 55 EGP20A 50 55 EGP20B 100 55 EGP20D 200 55


    Original     		PDF HER101S HER102S HER103S HER104S HER105S HER106S HER107S HER108S EGP10A EGP10B

    2000 - TZX27B

    Abstract: TZX20C TZX10 TZX10A TZX10B TZX10C TZX10D TZX11 TZX36C
    Text: ) Max (V) mA W mA V TZX2V4 2.3 2.6 5.0 100 5.0 0.5 TZX2V4A 2.3 2.5 5.0 100 5.0 0.5 TZX2V4B 2.4 2.6 5.0 100 5.0 0.5 TZX2V7 2.5 2.9 5.0 100 5.0 0.5 TZX2V7A 2.5 2.7 5.0 100 5.0 0.5 TZX2V7B 2.6 2.8 5.0 100 5.0 0.5 TZX2V7C 2.7 2.9 5.0 100 5.0 0.5 TZX3V0 2.8 3.2 5.0 100 5.0 0.5 TZX3V0A 2.8 3.0 5.0 100 5.0 0.5 TZX3V0B 2.9


    Original     		PDF TZX36C 500mW DO-35, MIL-STD-202, DO-35 TZX30B TZX30C TZX33 TZX33A TZX27B TZX20C TZX10 TZX10A TZX10B TZX10C TZX10D TZX11 TZX36C

    equivalent components of diode her207

    Abstract: her158 HER1605PT her1603g HER101 HER102 HER103 HER104 HER105 HER106
    Text: VPK Trr ns 25 25 25 25 25 25 25 25 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.3 1.3 1.7 1.7 1.7 50 50 50 50 50 75 75 75 30 30 30 30 30 30 30 30 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.3 1.3 1.7 1.7 1.7 50 50 50 50 50 75 75 75 30 , 1.7 1.7 50 50 50 50 100 100 30 30 30 30 30 30 30 5.0 5.0 5.0 5.0 5.0 5.0


    Original     		PDF 0ER1602PT HER1603PT HER1604PT HER1605PT HER1606PT HER1607PT HER1608PT ITO-220 UF1600F UF1601F equivalent components of diode her207 her158 HER1605PT her1603g HER101 HER102 HER103 HER104 HER105 HER106

    2002 - NISSEI

    Abstract: No abstract text available
    Text: = 10.0 K = kink A = ammo C = 5.0 D = 7.5 Lead spacing (mm) Lead Forming (omit for straight leads , Rated 50Vdc Cap. W H T P F 5.0 270F 6.5 8.5 4.5 3.5 5.0 330F 6.5 8.5 4.5 3.5 5.0 390F 6.5 8.5 4.5 3.5 5.0 470F 6.5 7.0 3.5 3.5 5.0 560F 6.5 7.0 3.5 3.5 5.0 680F 6.5 7.0 3.5 3.5 5.0 820F 6.5 7.0 3.5 3.5 5.0 1000F 6.5 7.0 3.5 3.5 5.0 1200F 6.5 7.0 3.5 3.5 5.0 1500F 6.0 7.0 3.5 3.5 5.0 1800F 6.0 7.0 3.5 3.5 5.0 2200F 6.0 7.0 3.5 3.5 5.0 2700F 6.0 7.0 3.5 3.5 5.0 3300F 6.0 7.0 4.0 3.5 5.0 3900F 6.5 7.0


    Original     		PDF 50Vdc, 100Vdc 00--AHS154-100--AHS184-100--AHS224-100--- NISSEI

    2011 - CL05B104KO5NNN

    Abstract: CL05A104KA5NNN CL05B102KB5NNN CL10C200JB8NNN CL10C270JB8NNN CL21B104KBFNNN CL05B104KP5NNN CL05B103KB5NNN CL10B102KB8NNN CL10C220JB8NNN
    Text: ) 0.5 1 10 22 47 100 220 330 470 560 1 2.2 3.3 4.7 6.8 10 22 27 33 47 68 100 120 150 25 0402(1005) 50 25 0603(1608) 50 25 0805(2012) 50 16 1206(3216) 25 50 1210(3225) 1812(4532) 50 2220(5750) 50 43 130 Array Type Capacitors 50 25 Medium-High Voltage Capacitors Super Small Size Capacitors High Capacitance , ) 10 16 25 4 6.3 10 0603(1608) 16 25 50 4 6.3 10 0805(2012) 16 25 50 6.3 10 1206(3216) 16 25 50 6.3 , 25 0805(2012) 4 6.3 0.95 10 16 25 0.7 10 6.3 10 1206(3216) 0.95 16 25 50 0.95 16 25 1210(3225) 2.0 35


    Original     		PDF

    2011 - CL10B102KB8NNN

    Abstract: CL31C560JB CL05A104KQ5NNN CL05B102KB5NNN CL21C271JB CL05C391JB5NNN CL05B104K CL10B471KB8NNN CL10B104KB8 CL21F104ZB
    Text: 0.5 1 10 22 47 100 220 330 470 560 1 2.2 3.3 4.7 6.8 10 22 27 33 47 68 100 120 150 25 0402(1005) 50 25 0603(1608) 50 25 0805(2012) 50 16 1206(3216) 25 50 1210(3225) 1812(4532) 50 2220(5750) 50 43nF 130nF Array Type Capacitors 50 25 Medium-High Voltage Capacitors Super Small Size Capacitors High Capacitance , ) 10 16 25 4 6.3 10 0603(1608) 16 25 50 4 6.3 10 0805(2012) 16 25 50 6.3 10 1206(3216) 16 25 50 6.3 , 25 0805(2012) 4 6.3 0.95 10 16 25 0.7 10 6.3 10 1206(3216) 0.95 16 25 50 0.95 16 25 1210(3225) 2.0 35


    Original     		PDF
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