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    HV1230 Search Results

    HV1230 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    HV1230800000G
    		Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Wire to Board - TERM BLK 12P TOP ENT 3.81MM PCB Original PDF 109.67KB
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    HV1230 Price and Stock

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    Bellnix Co Ltd MHV12-300S10P

    DC DC CONVERTER 300V 3W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MHV12-300S10P Bulk 35 1
    • 1 $137.66
    • 10 $130.38
    • 100 $125.50
    • 1000 $125.50
    • 10000 $125.50
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    Bellnix Co Ltd MHV12-300S10N

    DC DC CONVERTER -300V 3W
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    DigiKey MHV12-300S10N Bulk 7 1
    • 1 $137.66
    • 10 $130.38
    • 100 $125.50
    • 1000 $125.50
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    HVM Technology UMHV1230N

    DC DC CONVERTER -3000V 500MW
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    DigiKey UMHV1230N Bulk 5 1
    • 1 $247.73
    • 10 $234.61
    • 100 $229.56
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    HVM Technology UMHV1230

    DC DC CONVERTER 3000V 500MW
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    DigiKey UMHV1230 Bulk 2 1
    • 1 $247.73
    • 10 $234.61
    • 100 $229.56
    • 1000 $229.56
    • 10000 $229.56
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    Amphenol Anytek HV1230800000G

    TERM BLK 12P TOP ENT 3.81MM PCB
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    DigiKey HV1230800000G Bulk 2,070
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    Onlinecomponents.com HV1230800000G
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    Interstate Connecting Components HV1230800000G
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    HV1230 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HVV0912-800

    Abstract: SEMICONDUCTORS INC
    Contextual Info: HVV0912-800 Preliminary Datasheet L-Band High Power Pulsed Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications DESCRIPTION PACKAGE The high power HVV0912-800 device is a high voltage silicon enhancement mode RF transistor


    Original     		HVV0912-800 HVV0912-800 429-HVVi EG-01-POXXX1 SEMICONDUCTORS INC PDF

    HV1011-1000L

    Contextual Info: DESCRIPTION PACKAGE The high power HV1011-1000L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed avionics applications operating over the frequency range of 1030 MHZ to 1090MHz. FEATURES High Power Gain Excellent Ruggedness


    Original     		HV1011-1000L 1090MHz. PDF

    Contextual Info: A DESCRIPTION GE PACKAGE The high power HVV0405-1000 device is a high voltage silicon enhancement mode RF transistor designed for UHF-band pulsed RADAR applications operating over the frequency range of 420 MHz to 470 MHz. FEATURES High Power Gain Excellent Ruggedness


    Original     		HVV0405-1000 HV1230 MIL-STD-883, PDF

    Contextual Info: 800 Watts, 50V, 960-1215MHz DESCRIPTION PACKAGE The high power HVV0912-800 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed avionics applications operating over the frequency range of 960 MHz and 1215 MHz. FEATURES


    Original     		960-1215MHz HVV0912-800 PDF

    HVV1011-1000L

    Abstract: transistor 1000W 1000w power supply 1030 PULSED
    Contextual Info: HVV1011-1000L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, repeated every 24ms For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-1000L device is a high voltage silicon enhancement mode RF transistor


    Original     		HVV1011-1000L on/18us HVV1011-1000L on/18 429-HVVi EG-01-POXXX2 transistor 1000W 1000w power supply 1030 PULSED PDF

    diode gp 429

    Abstract: HVV1011-1000L interrogator transistor 1000W
    Contextual Info: HVV1011-1000L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, LTDC 6.4% For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-1000L device is a high voltage silicon enhancement mode RF transistor


    Original     		HVV1011-1000L on/18us HVV1011-1000L on/18 429-HVVi EG-01-POXXXX 07/XX/09 diode gp 429 interrogator transistor 1000W PDF