HTP 50 Search Results

xenon arc lamp

Contextual Info: Technical Information No. 4187 Edition: 08/05 Xenon Short Arc Lamp XBO 2000 W/HTP OFR - subject to change Substitutes: Edition 01/04 Status: valid „ Product description The OSRAM XBO® 2000 W/HTP OFR is a DC-operated lamp that is especially suited for applications requiring excellent arc

OSRAM xbo

Abstract: h d 2001 htp 50 range
Contextual Info: Technical Information No. 4187 Edition: 08/05 Xenon Short Arc Lamp XBO 2001 W/HTP OFR - subject to change Substitutes: Edition 01/04 Status: valid „ Product description The OSRAM XBO® 2001 W/HTP OFR is a DC-operated lamp that is especially suited for applications requiring excellent arc

63453-X04

Contextual Info: JL _1L PRODUCT NO SEE TABLE REV DESCRIPTION A ECR 590114 RLSD B ECR 500100 REVD DATE BY BS LOW 28JUN99 SC THAM 30MAYOO •2,0 *0.1 NON ACCUM 2,0 * 0,1 T ^ ^ — 0 0,7 *0.1 PC BOARD THK : 0,9 TO 1,3 2,0 *0.1 TYP RECOMMENDED MOUNTING HOLE LAYOUT — DIM X »0,13

Contextual Info: SIEMENS BAT 64.W Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage BAT 64W BAT 64-04W 3 £>| A [HÄÖ7! Ö2 ♦ f>) ~c 9 BAT 64-05W

V91334

Contextual Info: POS. #2 SECTION X -X LOGO MAY APPEAR SEE NOTE 16 ai iii □ .0 2 5 ±.001 * II. 0.64 ± . 0 3 ^ ^ ^ SEE TABLE FOR PLATING SECTION Y -Y SEE SHEET 2 AND TABLES FOR POLARIZATION FEATURE ARRANGEMENT AND STYLE m a t’l. code tolerances unless CUSTOMER otherwise specified

J5020

Contextual Info: R EV ISIO N S PRODUCT NO. SE E SHEET N0.4 j I i iti o n trB w a wi o hi o wi ni fu Hi hi i n B r ta rn_h _ fli n h H w a w _w nr a w w - w » bi a w . tu pi n in tir ijr w g v m REV D ESC RIP TIO N 1 SKETCHED RELEASED REVISED REVISED REVISED A B C D hi i B tt]

ag-07

Abstract: hta08 HTA06 HTD12 HTD13 nec ac03 l05 cg ag02 AK07 AG07
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD98412 ADVANCED ATM SWITCH LSI DESCRIPTION The µPD98412 NEASCOT-X15 is an LSI integrating ATM switch functions on a single chip. It has UTOPIA Level2 interfaces and can switch 30 x 30 circuits by connecting multiple PHY devices. This LSI employs a shared

RM3X12-2701-BLKOX

Abstract: blkox MIL-C-13924
Contextual Info: ALL DIMENSIONS IN MILLIMETERS THREAD SIZE C max D max M 2x0.4 M 2.5x0.45 M 3x0.5 M 3.5x0.6 M 4x0.7 M 5x0.8 M 6x1 4.830 5.460 6.700 8.100 8.690 9.900 12.580 1.600 2.100 2.400 2.600 3.050 3.700 4.600 Head Driver Size #1 #1 #2 #2 #2 #2 #3 RECOM. CLEAR. HOLE MIN.

AN8360NK

Contextual Info: - 547 AN8360N K A y T U , * & 80S- i>-CS2>. æ » c o ï 4 æ i ; ¿ r> 4 ~ i 2 v <0 $s s s t t o .« . tS) iL.'S ^ f UOi«í'CíEci_h#ící1ii'íi5t . S bi~ y '} 7 C SW ííií. h i Pd Pin No. o 8 K » h A-D 3 V ' í o/^.yir— 24 t ' y i « 1 DI L l\ y

SL440

Abstract: 6-32 UNC-2A MIL-C-13924A MIL-C-13924 UNC-2A MIL-STD-171 f65f O-Ring
Contextual Info: ALL DIMENSIONS IN INCHES THREAD SIZE C max D max 4-40 UNC-2A 6-32 UNC-2A 8-32 UNC-2A 10-24 UNC-2A 10-32 UNF-2A 0.245" 0.296" 0.373" 0.425" 0.425" 0.075" 0.089" 0.112" 0.125" 0.125" TOLERANCE +0 -1/32 UP TO 1" +0 -1/16 1" TO 2" RECOM. CLEAR. HOLE MIN. 0.144"

MB3516A

Abstract: 0x96000 MB86290A V832 GdcDispTiming GdcDispClock
Contextual Info: CREMSON MB86290A Graphics Display Controller Application Note January 7 ‘00 Rev.1.0 All Rights Reserved. The information contained in this document has been carefully checked and is believed to be reliable. However, Fujitsu Limited assumes no responsibility for inaccuracies. The information

5b1 transistor

Abstract: transistor 5b1 transistor bc qe TRANSISTOR MARKING TE SOT363 Marking 1cs sot marking 1cs FR1E marking code YA Transistor 6c2 transistor
Contextual Info: SIEMENS BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications 4 • High current gain 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package 2 1 Type

inter-lane cross-coupling

Abstract: MIPI csi-2 spec MIPI DSI spec MIPI d-phy spec HDMI TO MIPI DSI MIPI csi-2 WDFN-10 MIPI spec mipi dvi 8 pin ic tlp 250
Contextual Info: EMI4182 Common Mode Filter with ESD Protection Functional Description The EMI4182 is an integrated common mode filter providing both ESD protection and EMI filtering for high speed digital serial interfaces such as HDMI or MIPI D-PHY. The EMI4182 provides protection for two differential data line pairs

MIPI spec

Abstract: MIPI DSI spec csi-2 mipi MIPI csi-2 spec MIPI d-phy spec
Contextual Info: EMI4172 Common Mode Filter with ESD Protection Functional Description The EMI4172 is an integrated common mode filter providing both ESD protection and EMI filtering for high speed digital serial interfaces such as HDMI or MIPI D-PHY. The EMI4172 provides protection for two differential data line pairs

Contextual Info: SIEMENS BFP 181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz RFs 1=E Q62702-F1685 2=C 3=E Package 03 BFP181R II ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEMENS BFP 81 NPN Silicon RF Transistor • For low-rioise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 81 FAs

Transistor BFR 181w

Abstract: GMA13 MARKING CODE 21E SOT323 TRANSISTOR BO 345
Contextual Info: SIEMENS BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fr = 8GHz F=1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

marking 93A

Contextual Info: SIEMENS BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Type

Contextual Info: 32E D • Ô53b320 □ 01711=1 1 ■ SIP BSP 297 SIPMOS N Channel MOSFET SIEMENS/ SPCLi SEMICONDS T - M - O S * • SIPMOS - enhancement mode • Drain-source voltage Vis = 200V • Continuous drain current l 0 - 0.6A • Drain-source on-resistance fWon> = 2 .0 0

HQFP208

Abstract: MB86290 "frame grabber"
Contextual Info: Fujitsu Graphic Controller frequently asked questions Author: MM Date: May 2001 MB86290 CREMSON QUESTIONS : -Some pins of CREMSON are different in the board schematics and the manual. What is the correct

Contextual Info: Revised Mar. 1998 JS9P10-AS 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C CHARACTERISTICS Output Power atldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL CONDITION MIN. TYP. MAX. UNIT 23.0 24.0 — dBm

BFR106

Abstract: 2I k
Contextual Info: SIEMENS BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!

transistor B 1184

Contextual Info: SIEMENS BFP182R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • * r = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

CM 1241 siemens

Abstract: transistor b 1238 DECT siemens transistor bf 196 bfp196
Contextual Info: SIEMENS BFP196 NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fy = 7.5GHz F = 1.5 dE at 900MHz