HT1 NPN Search Results

marking Ht1

Abstract: HT1 npn 2SC3928A Marking HT1 sot
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SC3928A SOT-23-3L TRANSISTOR NPN FEATURES z Excellent hFE Linearity of DC forward current gain z small collector to emitter saturation voltage z supper mini package easy mounting

HT1 npn

Abstract: 2SC3928A Marking HT1 sot
Contextual Info: 2SC3928A SOT-23-3L Transistor NPN SOT-23-3L 1. BASE 2.92 2. EMITTER 0.35 1.17 3. COLLECTOR Features — — — 2.80 1.60 Excellent hFE Linearity of DC forward current gain small collector to emitter saturation voltage supper mini package easy mounting Dimensions in inches and (millimeters)

D1352

Abstract: MA 7824 2SC3623A 2SC3623 VEBO-15V C5-M3
Contextual Info: t — S 7 • 5 / — h ' > > ; = ] > h = 7 > ï> 7 , $ Silicon Transistors 2 S C 3 6 2 3 ,3 6 2 3 A NPN 4# St # f ô : mm O ¡t?jhpE"C'"t" o 4 .0 + 0 .2 hFE = 1000—3200 @ V ce = 5 . 0 V, Ic = 1 .0 mA O i&VCE(sa()T"t' o VCE(sat) = 0 .0 7 V TYP. V EB0

Ht1 MARKING CODE

Abstract: marking Ht1
Contextual Info: Philips Semiconductors Preliminary specification NPN resistor-equipped double transistor PUMH11 FEATURES • Transistors with built-in bias resistors R1 and R2 typ. 10 kiJ each 6 5 4 H* R* H ‘ • No mutual interference between the transistors Wgrgi • Simplification of circuit design

HT1 SOT363

Contextual Info: Philips Semiconductors Product specification NPN resistor-equipped double transistor PUMH11 FEATURES • T ransistors w ith built-in bias resistors R1 and R2 typ. 10 k£2 each • No m utual interference betw een the transistors 6 • S im plification of circu it design

LEXAN 121r - 21051

Abstract: lexan 121r 21051 u574 Dell 90w-AC adapter B568 B552 ffc B591 12505hs14 BA42-00141A BA41-00497A
Contextual Info: 10. Electrical Partlist Option SEC Code Location Name Spec. Unit , PC -,-,0to+95C,560mA,-, HYS64T64020HDL,PC , DT,KR,CP3,IEC320 C5,250/250V,7/3A,BLK,1830mm,-,H05VV-F

SCB-1700N

Abstract: SWRCH18A UL3302 AWG28 Ht1 SMD CODE BA81-07077A M470T2864EH3-CF7 smd ht1 C3604BD-F hdd 1.8 BA96-04113C
Contextual Info: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 6. Material List Level Code 1 BA44-00264A 1 Assembled ADAPTOR 1 BA43-00212A 1 BATTERY 1 BA43-00220A

2SC3732

Abstract: d1352
Contextual Info: — S • S/“ K '> i n > Silicon T ran sisto r 2SC3732 NPNx >J 3 > h m. # 7 W & rn W ï : mm) o x A -y-f > ?"iS JÌ* fìl['<'o o 3 u ? ^ fâ fD ^ )Ï7bf/J'? è o o a u- 9 '''o 02SA1459 t ^ > 7 ° - C ÎÈ fflT 'ë i t o T a = 25 ° C ) il g «& ^5- f§

Contextual Info: — S • S/“ K '> i n > Silicon T ran sisto r 2SC3732 NPNx >J 3 > h m. # 7 W & rn W ï : mm) o x A -y-f > ?"iS JÌ* fìl['<'o o 3 u ? ^ fâ fD ^ )Ï7bf/J'? è o o a u- 9 '''o 02SA1459 t ^ > 7 ° - C ÎÈ fflT 'ë i t o T a = 25 ° C ) il g «& ^5- f§

HT1 SOT363

Abstract: PUMH11/HT1 PUMH11 part marking Ht1 05607
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMH11 NPN resistor-equipped double transistor Product specification Supersedes data of 1998 Nov 26 1999 Apr 13 Philips Semiconductors Product specification NPN resistor-equipped double transistor PUMH11

HT1 SOT363

Abstract: part marking Ht1 MAM342
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMH11 NPN resistor-equipped double transistor Product specification Supersedes data of 1998 Aug 10 1998 Nov 26 Philips Semiconductors Product specification NPN resistor-equipped double transistor PUMH11

BX46

Abstract: T108 X108 S0532 1622AF
Contextual Info: • vii I T Hi I JV tfC iïf/\-TÂ ^ Compound Transistor G A I L4L NPNi it U a > ì>*? w - r m m t : mm O s <4 7 * t 6# L t f t jg Ê L t > 'i-t o Ri = 47 kQ, o G N 1L 4 L R 2 = 22 k Q ) £ 3 > - 7 °'J / > 9 'J T ' f ë f f l T # ( T a = il V ? -y ^ [ [ " v l r r r ;

2SC2003

Abstract: transistor 2sc2002 2SC2002 2SA953 PA33 PT600 npn transistor w5
Contextual Info: NEC j m * = r i \ r r x y ' j 3 > h ^ X ^ Silicon T ran sisto rs A 2SC2002,2003 NPN Silicon Epitaxial Transistor Audio Frequency Am plifier ftM m / « « /F E A T U R E S PACKAGE D IM ENSIO NS Unit : mm o t — r"4 Yv4 0 2SA953, 9 5 4 ¿ 3 > 7 °iJ (, O

HT1 SOT363

Contextual Info: DISCRETE SEMICONDUCTORS PUMH11 NPN resistor-equipped double transistor 1999 Apr 13 Product specification Supersedes data of 1998 Nov 26 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped double transistor

samsung R540 service

Abstract: L0613 samsung R540 service manual atheros ar5B95 JLCD501 AC82GL40 ATHEROS WLL6160-D99 DAC-09N019 4309-00 ltn156at01
Contextual Info: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다. - - This Document can not be used without Samsung's authorization. – 6. Material List Level 1 Parts Code Assembled EA Spec. Description ,-

C-48U

Abstract: 2N2666 JANTXV 2N5664 equivalent 2N5667S 2N5665
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 April 1998 INCH-POUND MIL-PRF-19500/455C 25 January 1998 SUPERSEDING MIL-S-19500/455B 19 January 1988 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING

Transistor 2gmz

Abstract: westinghouse relay c8 2N5921 radar distance 2N5120 allen bradley potentiometer type j ALLEN-BRADLEY POTENTIOMETER WESTINGHOUSE ELECTRIC 2N5920 WESTINGHOUSE driver
Contextual Info: File No. 440 , RF Pow er T ran sisto rs □G Q B Æ I Solid State Division 2N5920 2-W ,2-G H z, Em itter-Ballasted Silicon N -P -N O verlay Transistor F o r U H F /M ic ro w a v e Pow er A m p lifie r s , M icrow ave F u n d a m e n ta l-F re q u e n c y O s c illa to rs and

capacitor cross reference

Abstract: E 99006
Contextual Info: [application M l U C C 1 8 0 9 -1 /-2 IN ro • available [| U C C 2 8 0 9 -1 /-2 U C C 3 8 0 9 -1 /-2 I UNITRODE Economy Primary Side Controller FEATURES DESCRIPTION • User Programmable Soft Start With Active Low Shutdown • Operation to 1MHz The UCC3809 family of BCDMOS economy low power integrated circuits

Contextual Info: 7 7 SGS-THOMSON k7 £ HD êœi[LIOT(S lii!lD(g§ stvssso STV5350/H - STV5350/T MONOCHIP TELETEXT AND VPS DECODER WITH 8 INTEGRATED PAGES • COMPLETE TELETEXT AND VPS DECODER INCLUDING AN 8 PAGE MEMORY ON A SIN­ GLE CHIP ■ UPWARD SOFTWARE COMPATIBLE WITH

2N5666U3

Abstract: 2N5666 2N5665 JANTXV 2N5667 equivalent 2N5664 2N5666S 2N5667 2N5667S JANTXV 2N5666
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 31 October 2001. INCH-POUND MIL-PRF-19500/455D 31 July 2001 SUPERSEDING MIL-PRF-19500/455C 25 January 1998 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING,

SFOR1A42

Abstract: SY 356 S6370 SF0R1A42 sy 171 SG25AA60 S6111 sj 2025 DRA01B DRA01C
Contextual Info: I r t lr t L O lß W c o eo m co cnj o O O lo lo -H -H —1CO CO LO LO LO LO LO co co eo c o co LO eo o T T T T T T T T T T T T T T T T T T T T LO LO LO LO LO c o c o c o CO CO LO LO LO LO LO c o co co co eo T T T T T T T T T T T T T T T o o o o o o o o o o

ic 4082

Abstract: ic 4082 16 pins telefunken schematic diagram
Contextual Info: Tem ic U 4082 B TELEFUNKEN Semiconductors Low-Voltage Voice Switched Circuit for Hands-free Operation in Telephone, Intercom Systems, Household, Business Use, Car Telephones etc. Description The low-voltage voice switched speakerphone circuit, U 4082 B, incorporates the wide range of functions

smd w70 diode

Abstract: delta inverter hed55xxu12 A302 w9 BA41-00727A NB8M LTN121W1-L03-G BA41-00728A NH82801HBM UJ-850
Contextual Info: Main System Location Level SEC Code Name Description Qt'y SA/SNA T7100 1.8GHz .1 0902-002196 IC-MICROPROCESSOR 1 SA T7300(2.0GHz) .1 0902-002197 IC-MICROPROCESSOR

w76l

Abstract: 9m50
Contextual Info: Mai nSyst em Opt i on SECCode Loc at i on Name Descr i pt i on Uni t I C0902002197 T7300 2. 0GHz CPU MI CROPROCESSOR; LF80537GG0414M, 2. 0GHz, uFCPGA, 479P, TR, PLASTI C, 1. 05V, 34W, 0t o+10 PC 0C, 4MB, Mer om T7300, FSB800, 4M I CDRAM MODULE; M470T6554,