HT 25 TRANSISTOR Search Results

Contextual Info: INA333-HT www.ti.com SBOS514C – MARCH 2010 – REVISED OCTOBER 2013 Micro-Power, Zerø-Drift, Rail-to-Rail Out Instrumentation Amplifier Check for Samples: INA333-HT FEATURES 1 • 2 • • • • • • • • Low Offset Voltage: 25 V max at 25°C ,

OPA335 PT100

Abstract: INA333-HT ecg catalog
Contextual Info: INA333-HT www.ti.com SBOS514A – MARCH 2010 – REVISED JUNE 2012 Micro-Power, Zerø-Drift, Rail-to-Rail Out Instrumentation Amplifier Check for Samples: INA333-HT FEATURES 1 • 2 • • • • • • • • Low Offset Voltage: 25 V max at 25°C ,

BF256

Abstract: OPA335 PT100 SBOS514 OPA333 thermocouple INA333-HT msp430 pt100 PT100 REF200 INA333 pt100 msp430 rtd pt100 probe
Contextual Info: INA333-HT www.ti.com SBOS514 – MARCH 2010 Micro-Power, Zerø-Drift, Rail-to-Rail Out Instrumentation Amplifier Check for Samples: INA333-HT FEATURES 1 • 2 • • • • • • • • Low Offset Voltage: 25 mV max at 25°C , G ≥ 100 Low Drift: 0.2 mV/°C, G ≥ 1000

Contextual Info: Power Transistors 2SD1254 Silicon NPN epitaxial planar type Unit: mm 6.0±0.2 1.0±0.1 Parameter 3.0+0.4 –0.2 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . • Absolute Maximum Ratings TC = 25°C

Contextual Info: Power Transistors 2SD1256 Silicon NPN epitaxial planar type Unit: mm 6.0±0.2 1.0±0.1 Parameter 3.0+0.4 –0.2 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . • Absolute Maximum Ratings TC = 25°C

Contextual Info: Transistor 2SD1011 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0±0.2 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE sat . High emitter to base voltage VEBO. (Ta=25˚C) ea s ht e v

Contextual Info: Transistor 2SC1688 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 5.0±0.2 ● ● Small common emitter reverse transfer capacitance Cre. High transition frequency fT. Center at the emitter pin. Ta=25˚C ea s ht e v tp is :// it

Contextual Info: Power Transistors 2SB1498 Silicon PNP triple diffusion planar type Unit: mm 7.0±0.3 For power switching 3.5±0.2 • Features 0.8±0.2 7.2±0.3 3.0±0.2 +0.3 10.0 –0. 2.3±0.2 4.6±0.4 1:Base 2:Collector 3:Emitter I Type Package 3 TC=25˚C ea s ht e v

Contextual Info: Transistors 2SC2636 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation Unit: mm 2.5±0.1 R 0.9 R 0.7 1.0 2.0±0.2 4.1±0.2 • Absolute Maximum Ratings Ta = 25°C 2.4±0.2 1.0±0.1 d p lan inc ea se ed lud p lan m m es ht visi

numeric digital 600 ex ups ckt diagram

Contextual Info: MANUFACTURER DATA SHEET Motor Drive Manufacturer: TB Wood's Model Number: WFC1000/2000/4000 PDF File: Doc_000071_Cover.pdf Covers: Doc_000072_Covers.mdb Form 1226D ® WFC AC Inverter HT WFC1000 Series – 1 HP WFC2000 Series – FHP to 25 HP WFC4000 Series – 1 to 75 HP

Contextual Info: Power Transistors 2SD2029 Silicon NPN triple diffusion planar type Unit: mm φ 3.3±0.2 2.0±0.3 3.0±0.3 1.5 2.7±0.3 1.0±0.2 • Absolute Maximum Ratings TC = 25°C 0.6±0.2 5.45±0.3 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a

Contextual Info: Power Transistors 2SD1975 Silicon NPN triple diffusion planar type Unit: mm φ 3.3±0.2 2.0±0.3 3.0±0.3 1.5 2.7±0.3 1.0±0.2 • Absolute Maximum Ratings TC = 25°C 0.6±0.2 5.45±0.3 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a

Contextual Info: Transistor 2SB1612 Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2474 Unit: mm 1.5±0.1 45° * 1.0–0.2 0.5±0.08 1.5±0.1 Ta=25˚C 0.4±0.04 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo

Contextual Info: Transistor 2SD2460 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 3.0±0.2 4.0±0.2 M Di ain sc te on na tin nc ue e/ d • Features marking Ta=25˚C ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo

Contextual Info: Transistor 2SA1737 Silicon PNP epitaxial planer type For video amplifier Unit: mm * +0.25 0.4max. 0.4±0.08 +0.1 0.5±0.08 1.5±0.1 0.4±0.04 3.0±0.15 Ta=25˚C ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te

Contextual Info: Transistor 2SC4543 Silicon NPN epitaxial planer type For video amplifier Unit: mm *1 *2 1.0–0.2 0.5±0.08 1.5±0.1 Ta=25˚C 0.4±0.04 3.0±0.15 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for

UN5213

Abstract: UNR5210 UNR5211 UNR5212 UNR5213 UNR5214 UNR5215 UNR5216 UNR5217 UNR5218
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR521x Series (UN521x Series) Silicon NPN epitaxial planar type (0.425) Unit: mm For digital circuits 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 M Di ain sc te

ni 9219

Abstract: F 9214
Contextual Info: Transistors with built-in Resistor / 921E/921F/921K/921L/921M/921N/921AJ/921BJ/921CJ / 921K/921L/921M/921N/921AJ/921BJ/921CJ Unit: mm

Contextual Info: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts

l 9113

Abstract: ST 9114 9114
Contextual Info: Transistors with built-in Resistor / 911D/911E/911F/911H/911L/911AJ/911BJ/911CJ / 911F/911H/911L/911AJ/911BJ/911CJ Unit: mm Silicon PNP epitaxial planer transistor

c 6113 transistor

Contextual Info: Transistors with built-in Resistor UNR6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L UN6111/6112/6113/6114/6115/6116/6117/6118/6119/ 6110/611D/611E/611F/611H/611L Unit: mm 6.9±0.1 (4.0) (0.7) 2.5±0.1 (0.8) For digital circuits

Contextual Info: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts

MA 6216

Contextual Info: Transistors with built-in Resistor UNR6211/6212/6213/6214/6215/6216/6217/ 6218/6219/6210/621D/621E/621F/621K/621L UN6211/6212/6213/6214/6215/6216/6217/6218/6219/ 6210/621D/621E/621F/621K/621L Unit: mm 6.9±0.1 (4.0) (0.7) 2.5±0.1 (0.8) For digital circuits

ht 25 transistor

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Small Signal Transistor Arrays UNA0222 (UN222) Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) Unit: mm For motor drives 0.2+0.1 –0.0 12 3 • Absolute Maximum Ratings Ta = 25°C