HT 1000-4 POWER AMPLIFIER Search Results

Contextual Info: GaAs MMIC GN01094B GaAs IC with built-in ferroelectric Unit : mm 0.12 +0.05 −0.02 1.25±0.1 M Di ain sc te on na tin nc ue e/ d • Features 0.1 4 2.1±0.1 5 6 0.425 0.2±0.05 1 3 2 0.65 0.425 R0.2 • Super miniature S-Mini 6-pin package (2125 size) • Transmitter amplifier : Wide dynamic range on low operation current

AN5279

Contextual Info: ICs for TV AN5279 Mono channel SEPP audio power amplifier IC • Overview The AN5279 is a monolithic integrated circuit designed for 5.0 W 19 V, 8 Ω output audio power amplifier. It is a mono channel SEPP IC suitable for TV application. ■ Features or

Contextual Info: Transistor 2SC4543 Silicon NPN epitaxial planer type For video amplifier Unit: mm *1 *2 1.0–0.2 0.5±0.08 1.5±0.1 Ta=25˚C 0.4±0.04 3.0±0.15 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for

AUDIO AMP BOOK

Contextual Info: ICs for Audio Common Use AN7118S Low Voltage Dual 35mW Audio Power Amplifier Circuits BTL 300mW • Overview Unit : mm 1.27 0.4±0.25 M Di ain sc te on na tin nc ue e/ d ■ Features • Low voltage operation : VCC = 1.8V to 4.5V • Reduced voltage operation is available.

AM-155

Abstract: AMC-155
Contextual Info: f a n A M P ,c o m p a n y High Dynamic Range Amplifier, 12.5 dB Gain 300 -1000 MHz AM-/AMC-155 V2.00 Features TO-8-1 DC IN • 2.5 dB Typical Midband Noise Figure • +21 dBm Typical Midband O utput Power • +37 dBm Typical Midband Third Order Intercept

AM-184

Abstract: AMC-184
Contextual Info: f a n A M P ,c o m p a n y Cascadable Thin Amplifier, 20 dB Gain 10-2000 MHz AM-/AMC-184 V2.00 Features TO-8-1 0.150 TYP 3 8 DC IN • High Gain, 20 dB • Low Power, 60 mA Max RF OUT Tf 0.220 MIN RF IN (5.6) Guaranteed Specifications* 0.300 TYP (7.8) (From -55° C to +85° C Case Temp)

AM-180

Abstract: AMC-180
Contextual Info: f a n A M P ,c o m p a n y Cascadable Thin Film Amplifier, 10 dB Gain 10 -2000 MHz AM-/AMC-180 V2.00 Features TO-8-1 • +14 dBm Typical 1 dB Compression • 5 dB Typical Noise Figure • 1.4:1 Typical VSWR 0.150 TYP 3 8 DC IN RF OUT Tf 0.220 MIN RF IN (5.6)

U 114

Abstract: AM-142 AMC-142
Contextual Info: f a n A M P ,c o m p a n y Low Noise Amplifier, 12 dB Gain 200-1000 MHz AM-/AMC-142 V2.00 Features • 2.2 dB Typical Midband Noise Figure • +6 dBm Typical Midband Output Power • +20 dBm Typical Midband Third Order Intercept TO-8-1 0.150 TYP DC IN 3 8

Contextual Info: Transistor 2SA1737 Silicon PNP epitaxial planer type For video amplifier Unit: mm * +0.25 0.4max. 0.4±0.08 +0.1 0.5±0.08 1.5±0.1 0.4±0.04 3.0±0.15 Ta=25˚C ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te

Contextual Info: GaAs MMIC GN01096B GaAs IC with built-in ferroelectric Unit: mm 0.12 +0.05 −0.02 • Features 0.1 0.2±0.1 1.25±0.1 4 2.1±0.1 5 6 0.425 0.2±0.05 For low noise amplifier of cellular phone Other communication equipment 1 0.425 M Di ain sc te on na tin nc

Contextual Info: Transistor 2SA1487 Silicon PNP epitaxial planer type For video amplifier Unit: mm 5.9±0.2 4.9±0.2 ● ● 8.6±0.2 M Di ain sc te on na tin nc ue e/ d • Features High transition frequency fT. Small collector output capacitance Cob. +0.3 0.7–0.2 0.7±0.1

Contextual Info: an A M P com pany Low Noise Amplifier, 12 dB Gain 200-1000 MHz AM-/AMC-142 V2.00 Features 0.150 TYP 3.8 TO-8-1 • 2.2 dB T ypical M id b a n d N oise F igure • +6 dB m T ypical M id b a n d O u tp u t P o w e r • +20 dB m T ypical M id b a n d T h ird O rd e r In te rc e p t

Contextual Info: Power Transistors 2SC3943 Silicon NPN epitaxial planar type For video amplifier 2.7±0.2 14.0±0.5 Rating Unit Collector-base voltage Emitter open VCBO 110 V Collector-emitter voltage (Resistor between B and E) VCER 100 V VCEO Emitter-base voltage (Collector open)

AM-176

Abstract: AMC-176
Contextual Info: an A M P com pany Casadable Thin Film Amplifier, 13 dB Gain 5 - 1000 MHz AM-/AMC-176 V2.00 TO-8-1 Features • 4.0 dB Typical Noise Figure • 13-5 dBm Typical Midband 1 dB Compression • 1.25:1 Typical VSWR RF OUT GND Guaranteed Specifications* Frequency Range

AM-183

Abstract: AMC-183
Contextual Info: 7“ a n A M P company Cascadable Thin Film Amplifier, 28.5 dB Gain 10 - 1000 MHz AM-/AMC-183 V2.00 Features TO-8-1 DC IN • High Gain — 28 dB Typical • High Compression — +15 dBm Typical RF OUT Guaranteed Specifications* GND From - S 5 ° C t o + 8 5 °C Case Temp

transistor TD-100 le

Abstract: pn222 CBVK741B019 F63TNR PN2222N TN3019A ad label information on the box
Contextual Info: TN3019A TN3019A C TO-226 B E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. Absolute Maximum Ratings*

HT 200-srud

Abstract: 100ARMS HA200-SB schematic diagram induction heating hall current transducer 10A hall current transducer LA 100P voltage measurement LV 25-P PCB Mounting Hall Effect Current Transformer 200-SU 400-SID
Contextual Info: Issued March 1997 232-5250 Data Pack E Data Sheet Hall effect transducers, current and voltage This data sheet covers the following products: RS stock no. 286-311 286-327 286-333 286-349 286-355 286-377 286-383 286-399 286-406 286-412 286-428 286-434 286-440

HA200-SB

Abstract: construction hall effect transducers 200-SI 500w power amplifier pcb diagram 100ARMS PCB Mounting Hall Effect Current Transformer HT 200-srud 25-NP HT 500 srud transducers
Contextual Info: E17755 Issued July 1994 Halleffect transducers,current and voltage This data sheet covers the following products. RS stock no. 286-311 286-327 286-333 286-349 286-355 286-377 286-383 286-399 286-406 286-412 286-428 286-434 286-440 286-456 286-462 286-478 286-484

28644

Abstract: HA200-SB 500-SBD 25-NP 400-SID 200-SU PRIM configuration hall current transducer 10A hall current transducer LA 100P construction hall effect transducers
Contextual Info: Issued March 1995 019-307 Data Pack E Data Sheet Hall effect transducers, current and voltage This data sheet covers the following products: RS stock no. 286-311 286-327 286-333 286-349 286-355 286-377 286-383 286-399 286-406 286-412 286-428 286-434 286-440

MAGNETICS 77439-A7

Abstract: 55930-A2 55117 core magnetics 77894-A7 77083-A7 55050-A2 55083-A2 Core 55120-A2 55930a2 58930-a2
Contextual Info: Powder Cores • Molypermalloy ■ High Flux ■ Kool Mµ Since 1949, MAGNETICS, a division of Spang & Company, has been a leading world supplier of precision, high quality, magnetic components and materials to the electronics industry. Applications for

Contextual Info: MP7613 m Micro Power Systems Octal 12-Bit DAC A rray Digital-to-Analog Converter with Output Amplifier and Parallel Data/Address jj.P Control Logic FEATURES • Eight Independent Channel 12-Blt DACs with Output Amplifiers • Low Power 320 mW typ. • Parallel Digital Data and Address Port

LV 25-P

Abstract: LV 25-NP HA200-SB hall current transducer LA 100P 286377 50psp1 200-SRI 500-SBD HT 200-srud PCB Mounting Hall Effect Current Transformer
Contextual Info: Issued March 2001 232-5250 Data Pack E Data Sheet Hall effect transducers, current and voltage This data sheet covers the following products: RS stock no. 286-311 286-327 286-333 286-349 286-355 286-377 286-383 286-399 286-406 286-412 286-434 286-456 286-462

Contextual Info: Power Transistors 2SC3943 Silicon NPN epitaxial planar type For video amplifier 4.2±0.2 5.5±0.2 16.7±0.3 2.7±0.2 φ 3.1±0.1 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 110 V Collector-emitter voltage

Contextual Info: I O il ^ ¿ D m “0 I I 2 0 0 -1 2 0 0 MHz Standard Hybrid Amplifier • • Parameters 2 0 0 -1 2 0 0 M H z bandwidth Specification limit +25 Temperature 200-1200 12.8±0.8 Frequency range Small signal gain Gain vs. temperature Low noise figure • Low profile TO-8