HSD2118J Search Results

HSD2118J Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
HSD2118J		Hi-Sincerity Mocroelectronics	NPN Bipolar Transistor	Original	PDF	52.79KB	5

HSD2118J Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
y1 marking code transistor Abstract: y2 marking HSB1386J HSD2118J TL 434 transistor y1 MARK Y1 Transistor marking Y1 transistor Contextual Info: HI-SINCERITY Spec. No. : HJ200205 Issued Date : 2002.04.01 Revised Date : 2005.07.14 Page No. : 1/5 MICROELECTRONICS CORP. HSD2118J LOW VCE sat TRANSISTOR (20V, 5A) Feature • Low VCE(sat), VCE(sat)=0.6V(Typ.)(IC=4A/IB=0.1A) • Excellent DC Current Gain Characteristic	Original	HJ200205 HSD2118J HSB1386J O-252 183oC 217oC 260oC y1 marking code transistor y2 marking HSB1386J HSD2118J TL 434 transistor y1 MARK Y1 Transistor marking Y1 transistor	PDF

Catalog Datasheet

Type

Document Tags

PDF

y1 marking code transistor

Abstract: y2 marking HSB1386J HSD2118J TL 434 transistor y1 MARK Y1 Transistor marking Y1 transistor
Contextual Info: HI-SINCERITY Spec. No. : HJ200205 Issued Date : 2002.04.01 Revised Date : 2005.07.14 Page No. : 1/5 MICROELECTRONICS CORP. HSD2118J LOW VCE sat TRANSISTOR (20V, 5A) Feature • Low VCE(sat), VCE(sat)=0.6V(Typ.)(IC=4A/IB=0.1A) • Excellent DC Current Gain Characteristic

Original

HJ200205 HSD2118J HSB1386J O-252 183oC 217oC 260oC y1 marking code transistor y2 marking HSB1386J HSD2118J TL 434 transistor y1 MARK Y1 Transistor marking Y1 transistor

PDF