HOW TO TEST TRANSISTOR Search Results

Contextual Info: USER GUIDE | UG:007 Constant Current CC Demonstration Board Contents Page Introduction 1 Features 2 General 3-7 Test Procedure 8-15 Bill of Material 16 Ordering Info Summary 17 The Constant Current (CC) Demonstration Board described in this document shows how to use a

Contextual Info: SWRU337 April 2013 CC1200 Evaluation Module Kit Quick Start Guide Opening the Box and Running the Packet Error Rate Test 1. Kit Contents 2. How to use the Modules 2 x CC1200 Evaluation Modules 2 x Antennas type depending on frequency The EMK is an add-on kit to supplement the

HPA437

Contextual Info: User's Guide SLUU358 – April 2009 1.1-A, Single-Input, Single-Cell, Li-Ion Battery Charger With 50-mA LDO and 2.3-A Production Test Support This user's guide describes the bq25040 evaluation module EVM , how to setup the EVM to perform a stand-alone evaluation or interface with a system or host. The charger is designed to deliver up to 1.1 A of

BLF574 nxp

Contextual Info: Test Report BLF574 174-230MHz DVB-T Demo #842 CA-123-08 Scott Blum RF Application Lab Cumberland, RI Introduction NXP has introduced a new powerful part to its 50V portfolio, the BLF574 This report shows how 100W of DVB-T power can be generated in board space smaller than 2” x 4”.

tip42

Abstract: TIP42BTU transistor tip41 tip42c
Contextual Info: TIP42 SERIES TIP42/42A/42B/42C TIP42 SERIES(TIP42/42A/42B/42C) Medium Power Linear Switching Applications • Complement to TIP41/41A/41B/41C TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: TIP32 Series TIP32/32A/32B/32C TIP32 Series(TIP32/32A/32B/32C) Medium Power Linear Switching Applications • Complement to TIP31/31A/31B/31C TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

OF TRANSISTOR AT 30B

Contextual Info: TIP30 Series TIP30/30A/30B/30C TIP30 Series(TIP30/30A/30B/30C) Medium Power Linear Switching Applications • Complementary to TIP29/29A/29B/29C TO-220 1 1.Base PNP Epitaxial Silicon Transistor 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted

TRANSISTOR TIP31

Abstract: TIP31 NPN Transistor TO220 Semiconductor Packaging transistor cross reference Cross-Reference DATE transistor crossreference application TIP31 Tip31
Contextual Info: TIP31 Series TIP31/31A/31B/31C TIP31 Series(TIP31/31A/31B/31C) Medium Power Linear Switching Applications • Complementary to TIP32/32A/32B/32C TO-220 1 1.Base NPN Epitaxial Silicon Transistor 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted

SS49E

Abstract: pololu pair of led and photo transistor Pololu 2284 motor 2N3904 NPN Transistor ss49e hall effect led digital watch circuit diagram SS49E hall 25Dx52L emitter phototransistor
Contextual Info: M.E. 530.420 Lab 1: LEDs, Photo-Transistors, Hall-Effect Sensors, and Incremental Optical Encoders Louis L. Whitcomb ∗ Department of Mechanical Engineering G.W.C. Whiting School of Engineering The Johns Hopkins University Rev 02 Laboratory Due Date: 6:00PM Tuesday September 13, 2011 at 115 Hackerman Hall

fast switching pnp transistor 3A 60V

Abstract: bd241 BD242
Contextual Info: BD242/A/B/C BD242/A/B/C Medium Power Linear and Switching Applications • Complement to BD241/A/B/C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VCER

obsolete ic cross reference

Abstract: transistor crossreference crossreference transistor
Contextual Info: BDX53/A/B/C BDX53/A/B/C Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications • Power Darlington TR • Complement to BDX54, BDX54A, BDX54B and BDX54C respectively TO-220 1 1.Base NPN Epitaxial Silicon Transistor 2.Collector

H11AV2

Abstract: H11AV1A H11AV1M
Contextual Info: H11AV1,A H11AV2,A GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 70 Volt V BR CEO Minimum

OF TRANSISTOR AT 30B

Abstract: TIP29C cross reference Fairchild Semiconductor tip29
Contextual Info: TIP29 Series TIP29/29A/29B/29C TIP29 Series(TIP29/29A/29B/29C) Medium Power Linear Switching Applications • Complementary to TIP30/30A/30B/30C TO-220 1 1.Base NPN Epitaxial Silicon Transistor 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted

transistor cross reference

Abstract: BD243 BD243 transistor
Contextual Info: BD243/A/B/C BD243/A/B/C Medium Power Linear and Switching Applications • Complement to BD244, BD244A, BD244B and BD244C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

jfet matching fixture

Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT NMOS MODEL PARAMETERS SPICE RF Power Transistor spice AN002 ZERO Bias diode "RF MOSFETs" NMOS depletion pspice model depletion MOSFET SPICE AN001
Contextual Info: A tiIxK APPLICATION NOTE #AN001 REV 07/15/91 MICROW AVE POW ER TRANSISTOR IMPEDANCE MEASUREMENT M m /a - c o m p h i , in c . Introduction Calibration The required input and output impedances for M /A-COM PHI microwave power transistors are specified as Z if and Z of respectively. Z if is the test

EPC8004

Contextual Info: APPLICATION NOTE: AN015 eGaN FETs for Multi-MHz Applications Introducing a Family of eGaN FETs for Multi-Megahertz Hard Switching Applications EFFICIENT POWER CONVERSION Michael de Rooij, PhD, Johan Strydom, PhD The ultra high speed switching capabilities of gallium nitride transistors have now been

702 A TRANSISTOR

Abstract: TRansistor 701 702 P TRANSISTOR
Contextual Info: MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor

Contextual Info: FQB12N60 / FQI12N60 April 2000 QFET TM FQB12N60 / FQI12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

1g marking

Contextual Info: KST05/06 KST05/06 Driver Transistor • Collector-Emitter Voltage: VCEO = KST05: 60V KST06: 80V • Collector Power Dissipation: PC max = 350mW • Complement to KST55/56 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

KSP13BU

Abstract: ksp13
Contextual Info: KSP13/14 KSP13/14 Darlington Transistor • Collector-Emitter Voltage: VCES=30V • Collector Power Dissipation: PC max =625mW TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: KSE700/701/702/703 KSE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to KSE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor

Contextual Info: MVR2N2222AUA Screened Levels: MVR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MVR2N2222AUA 100 Krad 100 Krad DESCRIPTION This RHA level NPN switching transistor, MVR2N2222AUA device in a UA package, is ideal to

TRANSISTOR BC 560c

Abstract: transistor BC 458 Transistor BC 559B bc560 bc558c bc557 cross reference BC557/bc557 cross reference TRANSISTOR BC 560
Contextual Info: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: KSE180/181/182 KSE180/181/182 Low Power Audio Amplifier Low Current High Speed Switching Applications TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage