| HN58C257AT-10 |
|
Hitachi Semiconductor
|
256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) |
Original |
PDF
|
136.54KB |
25 |
| HN58C257AT-10 |
|
Hitachi Semiconductor
|
32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM |
Original |
PDF
|
201.53KB |
26 |
| HN58C257AT-10 |
|
Hitachi Semiconductor
|
EEPROM, Parallel, 256Kbit, 5V Supply, Commercial, TSOP, 32-Pin |
Original |
PDF
|
152.36KB |
26 |
| HN58C257AT-10 |
|
Renesas Technology
|
256k EEPROM (32 kWord x 8 Bit) Ready/Inverted Busy and Inverted RES Function |
Original |
PDF
|
174.37KB |
27 |
| HN58C257AT-10E |
|
Renesas Technology
|
256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) |
Original |
PDF
|
246.99KB |
25 |
| HN58C257AT-10E |
|
Renesas Technology
|
EEPROM; Capacity (bit): 256K; Organization (word): 32K; Organization (bit): x 8; Access time (ns): 100; Type: Parallel; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: TSOP (32); Remarks: with reset function; Application: Consumer/Industrial |
Original |
PDF
|
282.37KB |
26 |
