HM 2222 A Search Results

lN2222

Abstract: N2222A MPQ2221 lN2222A MPQ2222 CD79 PQ224 2N2218 2N2222 MPQ2221A
Contextual Info: MW2221 MPQ2222 Mn2221A Mn2222A QUAD DUAL-IN-LINE NPN SILICON ANNULAR GENERAL-PURPOSE TRANSISTORS . . . designed for general-purpose VHF amplifier applications. switching circuits and DC to Maximum Power Dissipation @ TA = 25°C PD = 1.25 Watts — MPQ2221, MPQ2222

yx 805

Abstract: 3722Q HC 322 32ag 352A OFNJ36223OJEN 32-EN 622a S35n NHCF
Contextual Info: /-7y 5/484247 6,1}< -A=KLIAJ Q K\chc ]gc`Uh]cb Q HUl0 `cUX WiffYbh< 622a> Q Fbgi`Uh]cb fYg]ghUbWY<3222H Q Bbj]fcbaYbhU` Zf]YbX`m dfcXiWh ,McEN Wcad`]Ubh- +,7*6058043 8<50*}1 }5510*}80437 ECN4 gYf]Yg UfY a]b]UhifY d\chcacg fY`Umg. ig]b[ d\chcY`YWhf]W ]gc`Uh]cb hYW\bc`c[m hc UW\]YjY kYU_ UbX ghfcb[ Y`YWhf]YX

4312 020 36640

Abstract: ferroxcube wideband hf choke
Contextual Info: PHILIPS INTERNAT ION AL b5E D 751 I IPHIN Ei 711002b BLV75/12 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in m obile radio transm itters in the 175 MHz communications band. Features • multi-base structure and emitter-ballasting resistors fo r an optim um temperature profile

transistor d9d

Abstract: M-8G
Contextual Info: ux~~s u9s {vsutvtw 3}.y8 41{-}5 {+y3y{5}3,45,{4 >aV]Ybh hYadYfUhifY < MUhYX jc`hU[Y < MUhYX WiffYbh < @]Y`YWhf]W ghfYb[h\ a]b0 < K`Ugh]W fYhU]bYf hmdY < HUf_Yf hmdY< HcXi`Y hmdY < FiadYf hmdY < OYfa]bU` hcfeiY < R]fY ghf]d `Yb[h\ < HUl0 k]fY fUb[Y < B]`Y Ic0<A475592

Y-841

Contextual Info: ux~~s u9s {wsutvtw 3}.y8 41{-}5 {+y3y{5}3,45,{4 >aV]Ybh hYadYfUhifY < MUhYX jc`hU[Y< MUhYX WiffYbh < @]Y`YWhf]W ghfYb[h\ a]b0 < K`Ugh]W fYhU]bYf hmdY < HUf_Yf hmdY< HcXi`Y hmdY < FiadYf hmdY < OYfa]bU` hcfeiY < R]fY ghf]d `Yb[h\ < HUl0 k]fY fUb[Y < B]`Y Ic0<A475592

Contextual Info: ux~~s v9s {vsutvtw 3}.y8 41{-}5 {+y3y{5}3,45,{4 >aV]Ybh hYadYfUhifY < MUhYX jc`hU[Y < MUhYX WiffYbh < @]Y`YWhf]W ghfYb[h\ a]b0 < K`Ugh]W fYhU]bYf hmdY < /62 hc 92 472Q>? 32> ,dYf dc`Y7222Q>? ,VYhkYYb ]bdih + cihdih36BB/D6 ,Zcf /3 hmdY36BB/D7 ,Zcf /4 hmdY36BB/D8 ,Zcf /5 hmdY36BB/H3

Contextual Info: ux~~s v9s {wsutvtw 3}.y8 41{-}5 {+y3y{5}3,45,{4 >aV]Ybh hYadYfUhifY < MUhYX jc`hU[Y < MUhYX WiffYbh < @]Y`YWhf]W ghfYb[h\ a]b0 < K`Ugh]W fYhU]bYf hmdY < HUf_Yf hmdY< HcXi`Y hmdY < FiadYf hmdY < OYfa]bU` hcfeiY < R]fY ghf]d `Yb[h\ < HUl0 k]fY fUb[Y < B]`Y Ic0<A475592

SED1722F

Contextual Info: SED1722/24 CMOS LCD DRIVER • Large-Capacity LCD Panel • Wide Range of Liquid Crystal Drive Voltage • 80/100 Output Driver I DESCRIPTION The SED1722 and the SED1724 are 80-output segment column driver for driving high-resolution dot-matrix LCD (liquid crystal display). The SED1722 and SED1724 feature a wide range of LCD drive voltages. These drivers

SM01067

Abstract: SFF157
Contextual Info: Continued from previous page Absoluta maximum ratings Typ* Nil X r Electrical characteristics Ta • 2 5 1 V rm n S lF to VRRM (V) (A) IFSM (A) IRmai 9 VR VF irax W IF (A) iRmax (mA) trrNMwSlF tir max On) VR 00 IF (A) S s ff Pin capacitance typ (pF) t SB1I-04HP

information applikation

Abstract: A109D information applikation mikroelektronik B303D Mikroelektronik Information Applikation B222D B260D "halbleiterwerk frankfurt" "Mikroelektronik" Heft mikroelektronik heft
Contextual Info: InnJDlkîn 1C = I Information Applikation Monolitisch integrierte IS für die INDUSTRIE­ ELEKTRONIK KATALOG If SONDER-1 Teil 1 |1 HEFT 1 J • ft • • ■ ■ 4 ^ " ■ W ' r; '* r _ ’ rd m D ß = ^ s e l e l - c t 3 n o r i i k Information Applikation

MH1SS1

Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
Contextual Info: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik

EZ 830

Contextual Info: {z00 ;NDJFRQ :/5+@ ;8-4/<; 0FBRSPFQ Z N\Y X]Y`YWhf]W ghfYb[h\ WUb fYUW\ 4222P=? UbX h\Y ]bgi`Uh]cb fYg]ghUbWY ]g 3222G Z Nkc acibh]b[ hmdYg UfY UjU]`UV`Y< gWfYk acibh]b[ UbX @EH fU]` acibh]b[0 Z Q]h\ Z]b[Yf dfchYWh]cb XYj]WY UfY UjU]`UV`Y Z GUbm _]bXg cZ d`i[/]b acXi`Yg UfY UjU]`UV`Y

TRANSISTOR BJ 033

Abstract: 2SB1068 JAN 5751 m5ss
Contextual Info: SEC j ^ fx / \ Y 7 Silicon T ran sistor A 2SB1068 PN P Silicon Epitaxial Transistor Audio Frequency Amplifier ¡^ S / F E A T U R E S K W m /P A C K A G E DIMENSIONS oî&‘W.i±-kWiM.WM<n^— ÿ — V ÿ 4 ^ ' í r f f l í L T v", K F '^ O 'f , Unit : mm

ZT 5551

Abstract: P20C SK 100 KQ 12 tatsus LT260 D74HCT244C UPD74HCT244
Contextual Info: MOS M O S In te g ra te d C irc u it PD74HCT244 OCTAL 3-STATE NON-INVERTING B U F F E R /LIN E D RIVER /LIN E R E C EIV ER C M O S Â Î Â IU Ï& /¿PD74HCT244 ¡ÜiJiÉCMOS 0 ' / 7 Í ' , 7 r i l <r>— M t L T M U S f t f c OCTAL 3 - S T AT E NON-INVERTING

2068 dd

Abstract: SIN227 W91031 fsk circuit lab
Contextual Info: Preliminary W91031 CALLING LINE IDENTIFIER Table of ContentsGENERAL DESCRIPTION .2 FEATURES AND

Contextual Info: Preliminary W91031 CALLING LINE IDENTIFIER Table of ContentsGENERAL DESCRIPTION .2 FEATURES AND

16f 676

Abstract: kd 503 transistor LT 5251 transistor KD 503 ccd sharp 13B1 LR36685 RJ24J3AA0PT kd 506 transistor kd 778
Contextual Info: BACK SHARP RJ24J3AA0PT DESCRIPTION The RJ24J3AA0PT is a 1/3.2-type 5.60 mm solidstate image sensor that consists of PN photo­ diodes and CCD s (charge-coupled devices). With approximately 1 310 000 pixels (1 344 horizontal x 971 vertical), the sensor provides a stable highresolution color image.

topswitch StackFET

Abstract: TOP243Y StackFET equivalent diode for sb260 TOP243y circuits EF20 core EPCOS DER-105 EF20 TRANSFORMER Epcos EF20 TRANSFORMER EF20 epcos
Contextual Info: Design Example Report Title 19.3 W Wide Range Flyback Power Supply using TOP243Y Specification Input: 207 – 400 VAC Outputs: +14 V / 1.2 A; +5 V / 0.5 A Application Oven Control Author Power Integrations Applications Department Document Number DER-105 Date

Contextual Info: fiK M O T O R O L A Military 10612 High Speed Dual 3-Input 3-Output OR/NOR Gate ELECTRICALLY TESTED PER: 5962-8775001 The 10611 is designed to drive up to six transmission lines simultaneously. The multiple outputs of this device also allow the wire “OR’’-ing of several levels of gat­

ic for half subtractor

Contextual Info: MOTOROLA Military 10580 Dual 2-Bit Adder/Subtractor ELECTRICALLY TESTED PER: MPG 10580 The 10580 is a high speed, low power general-purpose adder/subtractor. It is designed to be used in special purpose adders/subtractors or in high speed multi­ plier arrays. The 10580 can be used in any piece of equipment where these oper­

BUX 0715

Abstract: BUX 127
Contextual Info: M M O T O R O L A Military 10579 Look-Ahead Carry Block ELECTRICALLY TESTED PER: 5962-8774601 The 10579 is a high speed, low power, standard M E C L complex function that is designed to perform the look-ahead carry function. Th is device can be used with the 10581 4-bit A LU directly, or with the 10580 dual arithmetic unit in any

LT 5251

Abstract: TT 2222 Horizontal Output Transistor 647H ccd sharp JV3A RJ23N3AA0PT 623H MQ 6 SENSOR pin diagram RJ23N3
Contextual Info: BACK SHARP RJ23N3AA0PT RJ23N3AA0PT 1/2.7-type Interline Color CCD Area Sensor with 2 140 k Pixels DESCRIPTION Package : The RJ23N3AA0PT is a 1/2.7-type 6.65 mm solid- 16-pin shrink-pitch DIP [Plastic] state image sensor that consists of PN photo­ (P-DIP016-0500C)

B116

Abstract: d99d kkz0 7bb0
Contextual Info: "#" "%& %& "#$"%& % % & )%# $ & 2222 &''% &#("* *"# ### "#$%& !" $% $,-. 01#2$,#-0,"#-3 $351$6.778506390.52$:85690.52$:.-$;. #-;& %06-.,-.6#22.-2 $ $ '()'*% ,-.'*/%0,.,%1'223*45,.4'*6%788945,.4'*6/%:,6.%;49<(4)=> 1'94*%?,50'*,9)/%@A 1%788945,.4'*6/%:,6.%;49<(4)=>

7bb0

Abstract: B116 p7go
Contextual Info: "#" "%& %& Freescale Semiconductor, Inc. "#$"%& % % & )%# $ & 2222 &''% &#("* *"# ### "#$%& !" $% $,-. 01#2$,#-0,"#-3 $351$6.778506390.52$:85690.52$:.-$;. #-;& %06-.,-.6#22.-2 $ $ '()'*% ,-.'*/%0,.,%1'223*45,.4'*6%788945,.4'*6/%:,6.%;49<(4)=> 1'94*%?,50'*,9)/%@A 1%788945,.4'*6/%:,6.%;49<(4)=>