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    HL8340MG A Search Results

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    HL8340MG A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HL8340MG

    Abstract: ODE-208-067A
    Contextual Info: HL8340MG ODE-208-067A Z Rev.1 May 24, 2007 GaAlAs Laser Diode Description The HL8340MG is 0.85 µm band GaAlAs laser diode with a multi-quantum well(MQW) structure. It is suitable as a light source for sensor applications and various other types of optical equipment.


    Original
    HL8340MG ODE-208-067A HL8340MG HL8340MG: ODE-208-067A PDF

    Contextual Info: HL8340MG ODE-208-067B Z Rev.2 Feb. 01, 2008 GaAlAs Laser Diode Description The HL8340MG is 0.85 µm band GaAlAs laser diode with a multi-quantum well(MQW) structure. It is suitable as a light source for sensor applications and various other types of optical equipment.


    Original
    HL8340MG ODE-208-067B HL8340MG HL8340MG: PDF

    Contextual Info: Data Sheet HL8340MG/41MG GaAlAs Laser Diode 852nm/50mW Features: Outline • Infrared light output: 852nm Typ.  Single transverse mode  Optical output power: 50mW CW  Low operating current: 75mA Typ.  Low operating voltage: 2.4V Max.  Operating temperature: +60C


    Original
    HL8340MG/41MG 852nm/50mW 852nm HL8340MG/41MG PDF

    LD5033

    Abstract: opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G
    Contextual Info: Optodevices Opnext Lights It Up Opnext is paving the way to a future of exciting laser developments and ground breaking applications. Our industry heritage, future-focused thinking and deep commitment to research and development help us anticipate and meet


    Original
    OPD-010908 LD5033 opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G PDF