HL 100 TRANSISTOR Search Results

Calex

Abstract: 545 546 transistor 546
Contextual Info: Model 545 and 546 Voltsensors Features Dual Set-Point High and Low Triple Output (Hl, GO, LO) High Level Output (100 mA) Versatile Input Amplifier Differential Input Pin-Selectable Ranges High Input Impedance Variable Hysteresis Latching Capability Applications

CALEX VOLTSENSOR

Abstract: TRANSISTOR 545 TRANSISTOR 4841 kit mk 324 545 voltsensor Calex
Contextual Info: Models 545 and 546 Voltsensors Features Description n Dual Set-Point High and Low n Triple Output (Hl, GO, LO) High Level Output (100 mA) n Versatile Input Amplifier Differential Input Pin-Selectable Ranges High Input Impedance The Models 545 and 546 are precision dual set voltage

Contextual Info: 4086B INTERNATIONAL, INC CMOS EXPANDABLE 4-WIDE, 2-INPUT AND-OR INVERT GATE FEATURES CONNECTION DIAGRAM • Medium-speed operation — tp HL * 90 ns; tpLH * 140 ns typ. at 10 V - IN H IB IT and ENABLE inputs ■ Buffered outputs ■ 100% tested for quiescent current at 15 V

4086B

Abstract: 15-V 4000B
Contextual Info: 4086B INTERNATIONAL, INC. CMOS EXPANDABLE 4-WIDE, 2-INPUT AND-OR INVERT GATE FEATURES CONNECTION DIAGRAM • Medium-speed operation — tp HL * 90 ns; tpLH * 1^0 ns typ. at 10 V - IN H IB IT and ENABLE inputs ■ Buffered outputs ■ 100% tested for quiescent current at 15 V

2N4425

Abstract: GES6220-J1 2N3404 2N3405 GES6220 HS5306
Contextual Info: Sm all signal Transistors TO-92HS Case PD @ TC =25°C =1 0Watt TYPE NO. 2N3402 POLARITY BVc b o BVc e O NPN bveb0 >CBO v CBO <V) (V) (V) <nA) MIN MIN MIN MAX 25 25 5.0 100 hl•E 00 MIN o lC e v CE <mA) (V) MAX NF VCE(SA T ) « ' C c ob <mA) m (MHz) (dB)

Contextual Info: Small signal Transistors TO-92HS Case Pd @Tq =25°C =1 .OWatt TYPE NO. 2N3402 POLARITY BV c b o BVCEo BVEb o NPN ICBO v CBO (V) (V) (V) <nA) MIN MIN MIN MAX 25 25 5.0 100 e ic hl=E (mA) (V) 25 MIN MAX 75 225 ® VCE (V) VCE(SA T ) ® ' C (V) 4.5 0.3 *T NF

siemens functional profet

Abstract: BTS550P BTS 433 profet BTS550P LOGIC CHIP AZ 280 chip HL 100 Transistor Siemens Smart Power IC
Contextual Info: Product Concept for High Current PROFET Full Exploitation of the chip on chip technology • • • The cost performance ratio $/Siemens of base chip as a descrete transistor Control IC enables the smart functions Flexible combination of IC chip and base chip allows the adoption of the

HL 06 ic

Contextual Info: TOSHIBA 2SC5458 TENTATIVE TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5458 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 6.8MAX DC-DC CONVERTER APPLICATIONS A 0.6M AX 5.2 ±0.2 *tf- DC-AC INVERTER APPLICATIONS

TH3L10

Abstract: TH3L10 ic TK3L10 T7K40 T15J10 TP10K40 3J10 3L10Z 5L20 2SB1282
Contextual Info: POWER TRANSISTORS asnas? 3 EE J> — » ti Ä ± SÉ fé Absolute Maximum Ratings Vceo V ceo V ebo Type No. [V] [V] 2SD1022 T5L10 I00 100 1023 20 200 200 1024 T 8L10 I00 I00 1025 20 200 200 1026 T 15 L1 0 I00 I00 1027 20 200 200 1349 T 7K40 500 400 2SD1788

6DI50MA-050

Abstract: TFR3M AR4J
Contextual Info: D 6 I 5 M A - 5 5 a : Outline Drawings POWER TRANSISTOR MODULE • 4M : Features • f f i A h FE High D C Current Gain • K S W / f H i g h Speed Sw itching : Applications • if L f f l'O '*— $ General Purpose Inverter • Uninterruptible Power Supply

M57951L

Abstract: QM50DY DF 1 PC812 HL 100 Transistor HL 44 transistor
Contextual Info: MITSUBISHI HYBRID ICs M57951L HYBRID IC FOR DRIVING TRANSISTOR MODULES OUTLINE DRAWING Dimensions in mm 5.5MAX. M57951L is a Hybrid Integrated Circuit designed for driving Transistor Modules QM30DY, QM50DY, etc., in an Inverter application. This device operates as an isolation amplifier for Transistor Modules due

M57955L

Abstract: QM50DY-H QM50DY-HB "MITSUBISHI HYBRID" HL 44 transistor
Contextual Info: MITSUBISHI HYBRID ICs M57955L HYBRID IC FOR DRIVING HIGH BETA TRANSISTOR MODULES M57955L is a Hybrid Integrated Circuit designed for driving High Beta Transistor Modules QM50DY-HB, etc., in an Inverter application. This device operates as an isolation amplifier Transistor Modules

Contextual Info: RN1507~RN1509 T O SH IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1507, RN1508, RN1509 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Unit in mm + 0.2 2 .8 -0 .3 +0.2 1 .5 -0.1 • Including Two Devices in SMV

KTA1273

Abstract: KTC3205 Transistor kta1273 KTA1273 Y *A1273 Transistor
Contextual Info: SEMICONDUCTOR TECHNICAL D A TA KOREA E LE C T R O N IC S CO.,LTD. KTA1273 EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURES • Complementary to KTC3205. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage V CBO

M57916L

Abstract: sinewave inverter "MITSUBISHI HYBRID" DF 1 QM10
Contextual Info: MITSUBISHI HYBRID ICs M57916L HYBRID IC FOR DRIVING TRANSISTOR MODULES ● Two independent circuits are included. Isolation voltage: Viso=2500Vrms ● Each circuit can be driven by single power supply 7 ~ 9V Dimensions in mm 21MAX. 59MAX. 1 20 2.54±0.1

M57917L

Abstract: sinewave inverter QM50DY "MITSUBISHI HYBRID" QM10
Contextual Info: MITSUBISHI HYBRID ICs M57917L HYBRID IC FOR DRIVING TRANSISTOR MODULES M57917L is a Hybrid Integrated Circuit designed for driving Transistor Modules QM10XX, QM20XX, etc., in an Inverter application. This device operates as an isolation amplifier for Transistor Modules due

M57915L

Abstract: "MITSUBISHI HYBRID" M57915L MITSUBISHI HYBRID HYBRID SEMICONDUCTORS sinewave inverter M579 QM10
Contextual Info: MITSUBISHI HYBRID ICs M57915L HYBRID IC FOR DRIVING TRANSISTOR MODULES FEATURES ● Electrical isolation between input and output with integrated optocoupler. Viso=2500Vrms ● Applicable with single power supply 7 ~ 9V ● Applicable with TTL input OUTLINE DRAWING

n092

Abstract: 2SB1097 2SD1588 6111N
Contextual Info: m m p°p m n ' > ' J U > ' < r7 — h 7 > > X ? Silicon P o w e r T ra n s is to r 2SB1097 •; a > h ^ p n f ë J S i J C K -fS iS « <£ X - f y x ^ ^ > ? m iif f i PNP Silicon Epitaxial Transistor Low Frequency Power Amplifier, Low Speed Switching Industrial Use

Contextual Info: BCW69 BCW70 IL SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P transistors Marking BCW69 = Hl BCW70 = H2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.6 ^ 0.48 . 1 0.38 0.14 0.09 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR J.02 0.60 0.40

optocoupler mitsubishi

Contextual Info: MITSUBISHI HYBRID ICs M57915L HYBRID IC FOR DRIVING TRANSISTOR MODULES DESCRIPTION M57915L is a Hybrid Integrateci Circuit designed for driving Transis­ OUTLINE DRAWING Dim ensions in mm tor Modules QM1OXX, QM20XX, etc., in an Inverter application.This device operates as an isolation amplifier for Transistor Modules due

HL 100 Transistor

Abstract: HL 44 transistor Transistor CL 100 qm50dy mitsubishi power Modules "MITSUBISHI HYBRID" transistor RMD M57951L df transistor Mitsubishi transistor
Contextual Info: MITSUBISHI HYBRID ICs M57951L HYBRID IC FOR DRIVING TRANSISTOR MODULES DESCRIPTION M57951L is a Hybrid Integrated Circuit designed for driving Transis­ OUTLINE DRAWING Dim ensions in mm tor Modules QM30DY, QM50DY, etc., in an Inverter application.This device operates as an isolation amplifier for Transistor Modules due

S3V 05

Contextual Info: TOSHIBA 3SK240 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK240 Unit in mm TV TUNER, UHF RF AM PLIFIER APPLICATIONS + 0.2 2.9-0.3 M A X IM U M RATINGS Ta = 25°C v g id o VG2D0 v g is VG2S !G1 !G2 Pd Teh Tstg MARKING a M UN r o 3

T151

Abstract: T460 T760 T930
Contextual Info: 6DI10M S-050 ioa £ ± / < 9 — • Outline Drawings s < n - Y 17 > i > x 9 :£ i > 3 - - ) \ s POWER TRANSISTOR MODULE : Features • h F E ^ 'iijl' H ig h D C C u rre n t G ain • H ig h s p e e d s w itc h in g • 7 'J — In c lu d in g F ree W h e e lin g D io d e

Contextual Info: T O SH IB A 2SC1923 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC1923 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. FM, RF, MIX, IF AMPLIFIER APPLICATIONS. • Small Reverse Transfer Capacitance : Cre = 0.7pF (Typ.) Low Noise Figure