HJS 45 MA Search Results

3cs transistor

Abstract: marking 3cs 6c2 transistor PS056
Contextual Info: SIEMENS BC 857S PNP Silicon AF Transistor Array • For AF input stages and driver applications A • High current gain 5_ O ^ • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package

asssb

Contextual Info: m ÖÖD D ö23SbOS Q0147G2 b « S I E 6 8 8D 14702 □ r -3 < 7 -// SIEMENS AKTIENGESELLSCHAF _ Main ratings Draln-source voltage Continuous drain current Draln-source on-reslstance N-Channel - 400 V K>a = 5,9 A 4 ^0S «l = 1,0 f i Qo- Description

300-06DA

Abstract: 0143f
Contextual Info: MEA 300-06DA MEE 300-06DA MEK 300-06DA Fast Recovery Epitaxial Diode FRED Module RRM FAVM rr 600 V 304 A 250 ns Preliminary data V„ V,R RM 600 600 V Type MEA300-06DA 1 'ÎI 1 MEK300-06DA MEE300-06DA 2 2 3 1 1",1“! f f1rî 2 M 1 N I ¡11 W * N 1 ! ! Î

SICK wt

Abstract: SICK WT 4-2 on B540 B530 B510 B540 B550 SICK WT 24 EN 60825-1
Contextual Info: N F O R M A T I O N Dimension illustration 1 6 T 5 16.5 ø4.2 E C H N I C A L 5.6 2 3 5 31 7.3 49 I 22.6 2 16 Photoelectric Proximity Switch 4 41.5 15 WT 12L-2 10 M4 24 Setting options WT 12L-2 B510 * 1 LED signal strength indicator yellow/green 2 Axis of the receiver optics

Contextual Info: 32E D • ö23b3S0 ' SIPMOS P Channel MOSFET QQ17177 1 « S IP ^ BSS192 SIEMENS/ SPCL-i SEMICONDS_ _ • SIPMOS - enhancement mode • Draln-source voltage Vb» = -240V • Continuous drain current / D = -0.15A • Draln-source on-resistance

Contextual Info: □IXYS IGBT Module Half-Bridge Configuration VII100-12G4 ^C DC = 100 A V CES = 1200 V V CE (sat) = 2.6 V High Short Circuit SOA Capability Symbol Test C onditions V CES Tj = 25°C to 150°C v CGR Tj = 25°C to 150°C; RGE = 1 MQ V GES v GEM Continuous Transient

Contextual Info: BEBStiDS 00ûlb27 2Ô4 SIEMENS BSP 350 MiniSmart • • • • • • • • • High-side switch Short-circuit protection Overtemperature protection with hysteresis Overload protection Overvoltage protection Reverse battery protection1 Switching inductive load

STD38NF03L

Contextual Info: STD38NF03L  N - CHANNEL 30V - 0.013 Ω - 38A TO-252 STripFET POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS o n ID STD38NF03L 30 V < 0.0160 Ω 38 A • ■ ■ ■ TYPICAL RDS(on) = 0.013 Ω OPTIMIZED FOR HIGH SWTICHING OPERATIONS LOW THRESHOLD DRIVE

STD40NE03L

Contextual Info: STD40NE03L  N - CHANNEL 30V - 0.012 Ω - 40A TO-252 STripFET POWER MOSFET TYPE V DSS R DS o n ID STD40NE03L 30 V < 0.016 Ω 40 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.012 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE

Contextual Info: STD40NE03L  N - CHANNEL 30V - 0.012 Ω - 40A TO-252 STripFET POWER MOSFET TYPE V DSS R DS o n ID STD40NE03L 30 V < 0.016 Ω 40 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.012 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE

TO-252 MOSFET p channel

Contextual Info: STD30NE06L  N - CHANNEL 60V - 0.025 Ω - 30A TO-252 STripFET POWER MOSFET TYPE V DSS R DS o n ID STD30NE06L 60 V < 0.03 Ω 30 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.025 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100oC

hilton capacitors

Contextual Info: W E 7 TANTALUM CAPACITORS SWT SERIES DIMENSIONS AND TOLERANCE Dimension "d" - 0.020 ± 0 . 002’ 0.5±0.05mm Dimension "LL" 1.5 ±0.06" (38.1 ±1.6 mm) Tolerance on Diameter "D" - ±0.005" (±0.13 mm) Tolerance on Length “L" - ±0.015" (±0.38 mm) Part Marking Information

Contextual Info: I . . I PD -91884 International l R Rectifier SMPS M0SFET IR F P 450A HEXFET Power MOSFET Applications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed power switching V dss 500V R d s (o n ) m a x Id 0.40£2 14A Benefits

n4111

Abstract: SICK distance sensor SICK m12 5 pins 60-P41111 WSG1-01 60-P31311 "IR distance Sensor" 60-P11121 60-P41311 N4121
Contextual Info: D i s t a n ce Sensor DS 60 T E C H N I C A L D E S C R I P T I O N Distance Sensor DS 60 Application Field The DS 60 distance sensors operate according to the principle of time of flight measurement. The compact sensor makes large and adjustable scanning distances possible with very precise distance detection.

LOT-X-5152A

Abstract: LAMBDA LOD-X lambda LOS-X-24 LOT-W-5152-A LOT-W-5152A LOD-X-152 los-y-24 LOS-Z-24 LOS-X-12 LAMBDA LOD-W-152
Contextual Info: OEM Unear Lambda LO series Features—LO series AC input 105 to 125 VAC or 210-250 VAC, 47-440 Hz SU Recognized 3 mounting positions No overshoot on turn-on, turn-off, or power failure EXTENDED-LIFE CURVE Integrated circuit regulation Convection cooled, no internal fans or blowers or

tlg324

Abstract: TLG325 TLG321 SL2284-22 GL7E202 G503 SL-2283 GL6E202 SL-2284-20 GL7E208L
Contextual Info: — 83 — 'x\ it fe tt - r /— K u í > • * '/ - K S L -2283-24,26 SL-2284-24,26 SL-2283-20 £ -f V T tí n # -k Æ fë 1T ,= 2 5 'C iSÊtŒ m m it m Ar Inm H i t t - i ï . I t i t i T „ = 25”C) AX nm ) I f Im A ) I V (medi IF i'mA'1 (V ) I f IH

LA401MP

Abstract: NKY143S HDSP-4133 hdsp-4201 LA601MP NKY141S HDSP-4131 LA-501MF HDSP-7403 HDSP-A801
Contextual Info: -71 - ¡£ % • ± % « it tfc g Ê •f >+: nm tí Eft tí NAY133M NKY133M N A Y141S NKY141S N A Y143S NKY143S HDSF-7401 HDSP-7403 H D SP-A 8 0 1 H D SP-F3 0 1 V- * AA !nm! I f ir a A ' Iv I f .medí i.mA! VF (.Vi I f ím A fë 1T ,= 25’C'i Vr (V I

SL-2283

Abstract: LN513YK NAA141 NAA143 NAA145 NAA147 NAA161 NKA141 NKA143 NKA145
Contextual Info: -69- ¿2 £ 3S % fe it n - t to m ! t „= 25“C ü -k. Æ tö i.Ta = 25’Ci Dp }± 3 Í> -T /-K •± •S it iligUlÜHÖ; ¡i -f ' S C I w m - i l '/ - K X9 'v - Af nm AA If (nm) im A) I\ If (m cd) im A ) Vf 'V i «III;! If Im A) ¡//A) Vr \V ) I f im A)

sil f330

Abstract: sil f331 SICK wt SICK PROXIMITY SWITCH SICK WT 4-2 4-2P430 SICK distance sensor SICK WT 4-2P manual sick D-79183 rifle
Contextual Info: A ENGLISH Photoelectric Proximity Switch with background suspression Operating Instructions 1 4 Safety Specifications ‡ No safety component in accordance with EU machine guidelines. ‡ Read the operating instructions before starting operation. ‡ Connection, assembly, and settings only by competent

Contextual Info: U 63 4 H 2 5 6 PowerStore A v a i l a b l e in Q 1 / 9 7 Features □ High-performance CMOS non­ volatile static RAM 32768 x 8 bits □ 25, 35 and 45 ns Access Times □ 1 0 ,1 5 and 20 ns Output Enable Access Times □ Iqq=20 mA at 200 ns Cycle Time □ Automatic STORE to EEPROM

AN3994NK

Abstract: EL 14v 4c 3S12 th02 AN3993K RS418 AN3994 v2 9y
Contextual Info: AN3993K, AN3994NK AN 3993K, AN 3994N K J - T J U V T R f f l ^ t W ï l Æ i Î M B l H l K / N o r m a l V T R Audio R e c o rd in g a n d P la y b a c k A m p lifier C ircu its • m ^ Unit : mm AN3993K, AN3994NK i / >7°b L t £ £ l* iW .L Z ^ £ -fo ■

sick wl 33

Abstract: sick WL 10 sick WL 36 4-2P430 Sick WL sensor de barrera sick WL 12 sick WL 25 sick WL 27 sick WL 20
Contextual Info: A ENGLISH Photoelectric Reflex Switch with visible redlight Operating Instructions WL 4-2 P 331/N 331 WL 4-2 F 331/E 331 1 WL 4-2 P 132/N 132 WL 4-2 F 132/E 132 ‡ Read the operating instructions before starting operation. ‡ Connection, assembly, and settings only by competent

manual sick D-79183

Abstract: SICK D-79183 sensor de movimiento SICK distance sensor sick sensor esquema regulador pulsador SENSOR NIVEL Sick NT-6
Contextual Info: A ENGLISH Contrast Scanner Operating Instructions 15 1 41,5 4 Safety Specifications ‡ Read the operating instructions before starting operation. ‡ Connection, assembly, and settings only by competent technicians. ‡ Protect the device against moisture and soiling when

SICK D-79183

Abstract: D-79183 D-79183 waldkirch SICK D-79183 waldkirch 79183 waldkirch 50-10P142 d 79183 AG D-79183 Sensick Sensors OD SICK AG D-79183
Contextual Info: H E E T S A T A D D i s p l a c e m e n t S e n s o r O D Displacement Sensors from the OD Series Displacement Sensor Scanner and measuring system at the same time T ▼ urement is the physical basis of the dis- The displacement sensors of the OD series are scanners and measuring systems at the same time.