HJ3669 Search Results

HJ3669 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
HJ3669		Hi-Sincerity Mocroelectronics	Emitter to base voltage:5V 2A NPN epitaxial planar transistor for using in power amplifier applications power switching applications	Original	PDF	32.05KB	3
HJ3669		Hi-Sincerity Mocroelectronics	NPN EPITAXIAL PLANAR TRANSISTOR	Original	PDF	29.68KB	3

HJ3669 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
y2 marking Abstract: A1 marking code amplifier HJ3669 a5 marking Contextual Info: HI-SINCERITY Spec. No. : HE6029 Issued Date : 1997.10.24 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ3669 is designed for using in power amplifier applications, power switching application.	Original	HE6029 HJ3669 HJ3669 O-252 183oC 217oC 260oC y2 marking A1 marking code amplifier a5 marking	PDF
HJ3669 Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6029-B Issued Date : 1997.10.24 Revised Date : 2000.11.01 Page No. : 1/3 HJ3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ3669 is designed for using in power amplifier applications, power switching application.	Original	HE6029-B HJ3669 HJ3669	PDF
XL1225 equivalent Abstract: 2N3053 equivalent BF422 EQUIVALENT bc238 equivalent 2N6397 equivalent 2N5551 equivalent 2SB772 equivalent BC109 BC184 BC549 2sd880 equivalent BT169 equivalent Contextual Info: Transistors, SCR, IC CROSS REFERENCE / EQUIVALENT TABLE R Cross Reference Table 1 / 13 INDUSTRY TYPE No. DC COMP. TYPE No. Cross Reference Table 2 / 13 PACKAGE INDUSTRY TYPE No. DC COMP. TYPE No. PACKAGE 2N2955 2N2955 TO-3 2SA952 2SA952 TO-92 2N3055 2N3055	Original	2N2955 2SA952 2N3055 2SB1426 2N3417 XL1225 equivalent 2N3053 equivalent BF422 EQUIVALENT bc238 equivalent 2N6397 equivalent 2N5551 equivalent 2SB772 equivalent BC109 BC184 BC549 2sd880 equivalent BT169 equivalent	PDF

Catalog Datasheet

Type

Document Tags

PDF

y2 marking

Abstract: A1 marking code amplifier HJ3669 a5 marking
Contextual Info: HI-SINCERITY Spec. No. : HE6029 Issued Date : 1997.10.24 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ3669 is designed for using in power amplifier applications, power switching application.

Original

HE6029 HJ3669 HJ3669 O-252 183oC 217oC 260oC y2 marking A1 marking code amplifier a5 marking

PDF

HJ3669

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6029-B Issued Date : 1997.10.24 Revised Date : 2000.11.01 Page No. : 1/3 HJ3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ3669 is designed for using in power amplifier applications, power switching application.

Original

HE6029-B HJ3669 HJ3669

PDF

XL1225 equivalent

Abstract: 2N3053 equivalent BF422 EQUIVALENT bc238 equivalent 2N6397 equivalent 2N5551 equivalent 2SB772 equivalent BC109 BC184 BC549 2sd880 equivalent BT169 equivalent
Contextual Info: Transistors, SCR, IC CROSS REFERENCE / EQUIVALENT TABLE R Cross Reference Table 1 / 13 INDUSTRY TYPE No. DC COMP. TYPE No. Cross Reference Table 2 / 13 PACKAGE INDUSTRY TYPE No. DC COMP. TYPE No. PACKAGE 2N2955 2N2955 TO-3 2SA952 2SA952 TO-92 2N3055 2N3055

Original

2N2955 2SA952 2N3055 2SB1426 2N3417 XL1225 equivalent 2N3053 equivalent BF422 EQUIVALENT bc238 equivalent 2N6397 equivalent 2N5551 equivalent 2SB772 equivalent BC109 BC184 BC549 2sd880 equivalent BT169 equivalent

PDF