HITACHI TRANSISTOR MARKING Search Results

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

Contextual Info: 2SC5080 Silicon NPN Epitaxial Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product • High gain, low noise figure fT= 13.5 GHz typ PG = 18 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline MPAK-4 4 - 3^dBgH 1.

SL6 TRANSISTOR

Contextual Info: 2SC5080 Silicon NPN Epitaxial Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ. NF = 1.1 dB typ at f = 900 MHz Outline MPAK-4 • 1. 2. 3.

c 3866 transistor

Contextual Info: 2SC4784 Silicon NPN Bipolar Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 10 GHz typ • High gain, low noise figure PG = 15.0 dB typ. NF = 1.2 dB typ at f = 900 MHz Outline CM PAK 2 2. Base 3. Collector

SL6 TRANSISTOR

Abstract: transistor hitachi
Contextual Info: 2SC5081 Silicon NPN Epitaxial Transistor HITACHI A pplication VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ. NF = 1.1 dB typ at f = 900 MHz O utline CMPAK-4 , 2 1. 2.

Contextual Info: 2SC4784 Silicon NPN Bipolar Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 10 GHz typ • High gain, low noise figure PG = 15.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline CM PAK ^P ' 2 1. Em itter

transistor hitachi

Abstract: HITACHI VC-6045
Contextual Info: 2SC5080 Silicon NPN Epitaxial Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline MPAK-4 4 1 ! S a!l!tlQr £

Contextual Info: 2SC5081 Silicon NPN Epitaxial Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline C M P A K -4 1. 2. 3.

SL6 TRANSISTOR

Abstract: hitachi power transistor
Contextual Info: 2SC5081 Silicon NPN Epitaxial Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline C M P A K -4 £ ! S a!l!tlQr £

smd transistor marking SL6

Abstract: SMD MARKING CODE hitachi HTT1213S marking code s21 SMD Transistor marking code e2 SMD Transistor SMD MARKING CODE sg 2SC5700 Hitachi transistor MARKING CODE SMD IC TRANSISTOR SMD fr
Contextual Info: HTT1213S Silicon NPN Epitaxial Twin Transistor ADE-208-1448 Z Preliminary Rev. 0 Aug. 2001 Features • Include 2 transistors in a small size SMD package: SMFPAK–6 (6 Leads: 1.5 x 1.1 x 0.55 mm) Q1: Equivalent Buffer Transistor Q2: Equivalent OSC Transistor

smd transistor marking SL6

Abstract: SMD MARKING CODE hitachi 2SC5700 HTT1213E HITACHI SMD TRANSISTORS
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

SL6 TRANSISTOR

Abstract: Hitachi Transistor Hitachi DSA002746
Contextual Info: 2SC5081 Silicon NPN Epitaxial Transistor Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline CMPAK–4 4 3 1 2 1. Collector

smd transistor marking SL6

Abstract: SMD MARKING CODE hitachi SMD MARKING CODE sg 2SC5700 2SC5757 HTT1115S MARKING CODE SMD IC DSA003640 Hitachi DSA003640
Contextual Info: HTT1115S Silicon NPN Epitaxial Twin Transistor ADE–208–1440C Z Rev.3 Aug. 2001 Features • Include 2 transistors in a small size SMD package: SMFPAK–6(6 Leads: 1.5 x 1.1 x 0.55 mm) Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5700

SMD MARKING CODE hitachi

Abstract: SMD MARKING CODE sg 2SC5700 HTT1213S
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

smd code marking mitsubishi

Abstract: SMD MARKING CODE hitachi 2SC5700 2SC5757 HTT1115S smd transistor marking SL6
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

zo 103 ma

Abstract: 2SC5247 transistor ECG 332 DSA003641
Contextual Info: 2SC5247 Silicon NPN Bipolar Transistor ADE-208-281 Z 1st. Edition Oct. 1994 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 17 dB typ, NF = 1.2 dB typ at f = 900 MHz

2SC5078

Abstract: 2SC5079 DSA003641
Contextual Info: 2SC5079 Silicon NPN Epitaxial ADE-208-222 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 12 GHz Typ • High gain, low noise figure PG = 17 dB Typ, NF = 1.6 dB Typ at f = 900 MHz Outline CMPAK–4 2 3 1

2SC4926

Abstract: 2SC5051 Hitachi transistor DSA003638
Contextual Info: 2SC5051 Silicon NPN Epitaxial ADE-208-1131A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 14.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline

2SC4926

Abstract: 2SC5050 SL6 TRANSISTOR DSA0037657 Hitachi DSA003765
Contextual Info: 2SC5050 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 14.0 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector

igbt inverter welder schematic

Abstract: inverter welder schematic diagram inverter welder schematic inverter welder schematic 1 phase using igbt inverter welder schematic 1 phase MBM300GS12A inverter welder 4 schematic hitachi igbt TOSHIBA IGBT snubber igbt testing procedure
Contextual Info: Ref.No. IGBT-01 Rev.2 Hitachi, Ltd. Power & Industrial Systems Power Semiconductor Dept. Power & Industrial Systems Div. Hitachi IGBT Module Application Manual 1 Introduction to Hitachi IGBT Modules This application manual references specifications of the GS Series AW Version of Hitachi Insulated

SL6 TRANSISTOR

Abstract: 2SC5080 2SC5081 DSA003719
Contextual Info: 2SC5081 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline CMPAK–4 2 3 1 4 1. Collector 2. Emitter

Hitachi DSA0076

Abstract: 2SC5138
Contextual Info: 2SC5138 Silicon NPN Epitaxial ADE-208-225A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 6 GHz typ • High gain, low noise figure PG = 13 dB typ, NF = 1.8 dB typ at f = 900 MHz Outline SMPAK

Contextual Info: 2SK2685 GaAs HEMT HITACHI A D E -208^00 Z 1st. Edition October 1995 Application • UHF low noise amplifier Features • Excellent low noise characteristics. Fmin = 0.83dB Typ (3V, 10mA, 2GHz) • High associated gain. Ga = 17 dB Typ (3V, 10mA, 2GHz) •

2SC5078

Abstract: DSA003641
Contextual Info: 2SC5078 Silicon NPN Epitaxial ADE-208-221 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 12 GHz Typ • High gain, low noise figure PG = 17 dB Typ, NF = 1.6 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 4