HITACHI RF EDITION Search Results

Contextual Info: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems HITACHI ADE-207-265 Z) 1st Edition November 1998 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF

Contextual Info: 2SC4965 Silicon N PN Epitaxial HITACHI ADE-208-006 1st. Edition Application VHF / UHF RF switch Features • Low Ron and high performance for RF switch. • Capable o f high density mounting. Outline C M PA K ^ ^2 ^ 1 • Emitter 2. Base 3. Collector 745 2SC4965

Contextual Info: 2SC4964 Silicon N PN Epitaxial HITACHI Application VHF / UH F RF switch Features • Low Ron and high performance for RF switch, • Capable o f high density mounting. Outline MPAK 2 740 1. Emitter 2. Base 3. Collector ADE-208-005 1st. Edition 2SC4964 Absolute Maximum Ratings Ta = 25 °C

Contextual Info: HD155111F RF Single-chip Linear IC for PCN Cellular Systems HITACHI ADE-207-257 Z 1st Edition August 1998 Description The HD 15511 IF was developed for PCN (DCS 1800) cellular systems, and integrates most of the functions of a transceiver. The HD 15511 IF incorporates the bias circuit for a RF LNA, a 1st mixer, lst-IF amplifier,

Contextual Info: BIC801M Bias Controlled Monolithic IC VHF/UHF RF Amplifier HITACHI ADE-208-705C Z 4th. Edition Nov. 1, 1998 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gatel.); To reduce using parts cost & PC board space. • High gain;

Contextual Info: BIC701M Bias Controlled Monolithic IC VHF/UHF RF Amplifier HITACHI ADE-208-703C Z 4th. Edition Nov. 1, 1998 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gatel.); To reduce using parts cost & PC board space. • High gain;

diode marking CODE VN G1

Abstract: BIC701C SC-82AB
Contextual Info: BIC701C Bias Controlled Monolithic IC VHF/UHF RF Amplifier HITACHI ADE-208-704C Z 4th. Edition Nov. 1, 1998 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gatel.); To reduce using parts cost & PC board space. • High gain;

Contextual Info: BB303M Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier HITACHI ADE-208-697A Z 2nd. Edition Nov. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; • Withstanding to ESD;

Contextual Info: BB303C Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier HITACHI ADE-208-698A Z 2nd. Edition Nov. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; • Withstanding to ESD;

Contextual Info: BB403M Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier HITACHI ADE-208-699A Z 2nd. Edition Nov. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; • Withstanding to ESD;

Contextual Info: 3SK228 GaAs Dual Gate MES FET HITACHI ADE-208-280 1st. Edition Application UH F TV tuner RF Am plifier Outline MPAK-4 1. 2. 3. 4. Source Gatel Gate2 Drain 1087 3SK228 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Drain to source voltage Vqs

cq 447

Abstract: 3SK 177
Contextual Info: 3SK298 Silicon N-Channel Dual Gate MOS FET HITACHI ADE-208-390 1st. Edition Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline CMPAK-4 3< . 4 ] 1• Source 2. Gatel

Contextual Info: BB501M Build in Biasing Circuit MOS FET IC UHF RF Amplifier HITACHI ADE-208-700C Z 4th. Edition Nov. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise;

Contextual Info: BB501C Build in Biasing Circuit MOS FET IC UHF RF Amplifier HITACHI ADE-208-701C Z 4th. Edition Nov. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise;

ha2200

Abstract: ha22003
Contextual Info: HA22003T 1.9GHz GaAs MMIC HITACHI ADE-207-192 Z 1st. Edition December 1995 Application • Suitable for Down converter of PHS (1.9GHz) Features • • • • • • Low voltage operation (3V) Low noise (7dB Typ) High conversion gain (8.5dB Typ) Built-in RF and LO matching circuits (5012)

Contextual Info: 3SK290 Silicon N-Channel Dual Gate MOS FET HITACHI ADE-208-271 1st. Edition Application UHF RF amplifier Features • Low noise figure. NF = 2.3 dB Typ. at f = 900 MHz • High gain. PG = 19.3 dB Typ. at f = 900 MHz Outline CMPAK-4 1. 2. 3. 4. 1098 Source

Contextual Info: BB304C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier HITACHI ADE-208-606C Z 4th. Edition Aug. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics;

Contextual Info: BB305C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier HITACHI ADE-208-608C Z 4th. Edition May 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Superior cross modulation characteristics. • High gain; (PG = 28 dB typ. at f = 200 MHz)

Contextual Info: BB305M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier HITACHI ADE-208-607C Z 4th. Edition May 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Superior cross modulation characteristics. • High gain; (PG = 28 dB typ. at f = 200 MHz)

Contextual Info: 3SK295 Silicon N-Channel Dual Gate MOS FET HITACHI ADE-208-387 Ist. Edition Application U H F RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 M H z • Capable o f low voltage operation Outline MPAK-4 1. 2. 3. 4. Source G atel Gate2

MM1225

Contextual Info: 3SK309 GaAs N Channel Dual Gate MES FET UHF RF Amplifier HITACHI ADE-208-472 A 2nd. Edition Features • Capable of low voilage operation VDS = 1.5 to 3 V • Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz) • High power gain (PG = 21.0 dB typ. at f = 900 MHz)

Contextual Info: PF0310A MOS FET Power Amplifier Module for VHF Band HITACHI ADE-208-315A Z 2nd Edition July 1996 Features • Small package: 30 x 10 x 5.9 mm • High efficiency: 55% Typ • Low power control current: 0.5 mA Max Pin Arrangement • RF-J 1: Pin 5 2 2: V p c

Contextual Info: 3SK309 GaAs N Channel Dual Gate MES FET UHF RF Amplifier HITACHI Features • Capable of low voltage operation VDS = 1.5 to 3 V • Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz) • High power gain (PG = 21.0 dB typ. at f = 900 MHz)

Contextual Info: BB301C Build in Biasing Circuit MOS FET IC VHF RF Amplifier HITACHI ADE-208-507 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; NF = 1.3 dB typ. at f = 200 M Hz • W ithstanding to ESD; Build in ESD absorbing diode . Withstand up to 200 V at C = 200 pF,