HITACHI B 856 Search Results

Contextual Info: HM5164805A Series HM5165805A Series 8388608-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-458 B (Z) Preliminary Rev. 0.2 Jun. 12, 1996 Description The Hitachi HM5164805A Series, HM5165805A Series are CMOS dynamic RAMs organized 8,388,608-word X 8-bit. They employ the most advanced CMOS technology for high performance and

Contextual Info: 2SD1177 Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SB874 Outline T O -2 2 0 A B 2 O 1 1. Base 2. Collector Flange 3. Emitter O - —VA— —WV2 k£2 2 0 0 Si (Typ) (Typ) ì\' 2SD1177 Absolute Maximum Ratings (Ta = 25 °C)

2SB765

Contextual Info: 2SB765 K Silicon PNP Triple Diffused HITACHI Application Medium speed and power switching complementary pair with 2SD864(K) Outpline T O -2 2 0 A B 2 O 1 1. Base 2. Collector (Flange) 3. Emitter O - —VA— —WV4 k£2 3 0 0 Si (Typ) (Typ) Absolute Maximum Ratings (Ta = 25 °C)

Contextual Info: HB56S W1664DBD-5/5L/6/6L, HB56SW1664DBC-5/5L/6/6L 128 MB EDO DRAM S.O.DIMM 16-Mword x 64-bit, 8k/4k Refresh, 1-Bank Module 16 pcs of 16 M x 4 components HITACHI ADE-203-864C (Z) Rev. 1.0 June 26, 1998 Description The H B 56SW 1664D B D is a 16M x 64 dynam ic R AM Sm all Outline D ual In-line M em ory M odule

Contextual Info: H N 6 2 W 4 5 4 B S e r ie s 262144-word x 16-bit CMOS Mask Programmable ROM HITACHI ADE-203-682 Z Preliminary Rev. 0.0 Nov. 18,1996 Description The HN62W454B is a 262144 words by 16 bits CMOS Mask Programmable ROM. A high speed access of 120/150 ns (max) is the most suitable to the system using a high speed micro-computer by 16 bits.

Nippon capacitors

Contextual Info: HB56UW873E-5/6 64MB Buffered EDO DRAM DIMM 8-Mword X 72-bit, 4k Refresh, 1 Bank Module 9 pcs of 8M X 8 components HITACHI ADE-203-856 (Z) Preliminary, Rev. 0.0 Nov. 11, 1997 Description The HB56UW 873E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been

Contextual Info: HB56UW873E-5/6 64MB Buffered EDO DRAM DIMM 8-Mword X 72-bit, 4k Refresh, 1 Bank Module 9 pcs of 8M X 8 components HITACHI ADE-203-856A (Z) Rev. 1.0 May 15, 1998 Description The HB56UW873E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been

2SB649A

Abstract: 2sb649 2SB649A HITACHI DSA003644
Contextual Info: 2SB649, 2SB649A Silicon PNP Epitaxial ADE-208-856 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SD669/A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 2SB649, 2SB649A Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: HB56UW873E-5/6 64MB Buffered EDO DRAM DIMM 8-Mword X 72-bit, 4k Refresh, 1 Bank Module 9 pcs of 8M X 8 components HITACHI ADE-203-856 (Z) Preliminary, Rev. 0.0 Nov. 11, 1997 Description The HB56UW873E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been

Hitachi DSA00164

Abstract: Nippon capacitors
Contextual Info: HB56UW873E-5/6 64MB Buffered EDO DRAM DIMM 8-Mword x 72-bit, 4k Refresh, 1 Bank Module 9 pcs of 8M × 8 components ADE-203-856A (Z) Rev. 1.0 May 15, 1998 Description The HB56UW873E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been

HB56UW873E-5

Abstract: HB56UW873E-6 HM5165805 Hitachi DSA0020 Hitachi DSA00200 Nippon capacitors
Contextual Info: HB56UW873E-5/6 64MB Buffered EDO DRAM DIMM 8-Mword x 72-bit, 4k Refresh, 1 Bank Module 9 pcs of 8M × 8 components ADE-203-856A (Z) Rev. 1.0 May.15, 1998 Description The HB56UW873E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed

Contextual Info: H D66300T- Horizontal Driver for TFT-Type LC D Color TV The HD66300T is a horizontal driver used for TFTtype (Thin Film Transistor) LCD color TVs. Specifi­ cally, it drives the drain bus signals of a TFT-type LCD panel. Features The HD66300T receives as input three video_signals R,

HD648180W0F6

Abstract: HD648180W0F4 5A/1/PURE 5001h
Contextual Info: HD648180W-MCU Micro Controller Unit • DESCRIPTION The HD648180W is an 8-bit CM OS m icrocontroller in the HD64180 family. Its instruction set is upward-compatible with the HD64180Z, hence with the Z-80. Twelve instruc­ tions (seven types) have been added, bringing the total num ­

Contextual Info: 2SK2936 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-559B Z 3rd. Edition June 1, 1998 Features • Low on-resistance Rds =0.010 Q. typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline 2SK2936

Contextual Info: 2SB727 K Silicon PNP Epitaxial HITACHI Application Medium speed and power switching complementary pair with 2SD768(K) Outline TQ -220AB Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit C ollector to base voltage v CBQ -1 2 0 V C ollector to em itter voltage

Contextual Info: 2SK2329 L , 2SK2329(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 2.5 V gate drive device can be driven from 3 V source • Suitable for Switching regulator, DC-DC converter

Contextual Info: HB56UW1673E-5/6 128MB Buffered EDO DRAM DIMM 16-Mword X 72-bit, 4k Refresh, 1 Bank Module 18 pcs of 16M X 4 components HITACHI ADE-203-854 (Z) Preliminary, Rev. 0.0 Nov. 11, 1997 Description The HB56UW1673E belongs to 8-byte DIMM (Dual in-line Memory Module) family , and have been

Contextual Info: HM5116100 Series 16,777,216-word x 1-bit Dynamic RAM HITACHI ADE-203-646D Z Rev. 4.0 Jun. 24, 1997 Description The Hitachi HM 5116100 is a CMOS dynamic RAM organized 16,777,216-word x 1-bit. It employs the most advanced 0.5 |im CMOS technology for high performance and low power. The HM5116100 offers

Contextual Info: 2SK2334 L , 2SK2334(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC-DC converter

Contextual Info: HL6733FM Visible High Power Laser Diode HITACHI ADE-208-516B Z 3rd Edition May 1, 1998 Description The HL6733FM is a 0.68 jam band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for large capacity optical disc memories and various other types of optical

Contextual Info: HB56AW1672E-5/6 128MB Buffered FP DRAM DIMM 16-Mword X 72-bit, 8k Refresh, 1 Bank Module 18 pcs of 16M X 4 components HITACHI ADE-203-857(Z) Preliminary, Rev. 0.0 Nov. 11, 1997 Description The HB56AW1672E belongs to 8-byte DIMM (Dual in-line Memory Module) family , and has been

Ge 2sa

Abstract: 2SA743A A743A 2SA743
Contextual Info: 2SA743, 2SA743A Silicon PNP Epitaxial HITACHI Apr. 13, 1998 Application Low frequency power amplifier complementary pair with 2SC1212 and 2SC1212A Outline T O -1 2 6 M O D I 12 1. Emitter 2. Collector 3. Base 2SA 743, 2S A 743A Absolute Maximum Ratings Ta = 25 °C

2SK2346

Contextual Info: 2SK2346 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC-DC converter

Contextual Info: 2SK1949 L , 2SK1949(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter