HITACHI 28 PIN PLASTIC SOJ PACKAGE Search Results

DATA SHEET OF IC 317

Abstract: Test-Element-Group Thermal Test-Element-Group hitachi ic hitachi HM514256 HM514256 28-pin SOJ SRAM high speed thyristor HM62256 Reliability of Hitachi IC Memories
Contextual Info: Reliability of Hitachi IC Memories Contents 1. Structure 2. Reliability 3. Reliability of Semiconductor Devices Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern,

HM511000J

Contextual Info: • 44C,b2D3 nonni =i2s «hits HB56D236B S eries 2,097,152-Word x 36-Bit High Density Dynamic RAM Module ■ DESCRIPTION The HB56D236B is a 2M x 36 dynamic RAM module, mounted 16 pieces of 4 Mbit DRAM HM514400JP sealed in SOJ package and 8 pieces of 1 Mbit DRAM

IC Package Names and Code Designations

Abstract: data sheet IC 7408 7404 not gate ic MSP 044 THERMISTOR enplas otq-100-0.5 IC 7404 7406 IC51-1004-809 ic 7404 datasheet HLP40R ic 7408
Contextual Info: Hitachi Semiconductor Package DATA BOOK ADE 410-001A Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher functional capacity and higher density and developing packages

HB56A19B

Abstract: HB56A19B8A zp 1401 HB56A19B10A SIMM 30-pin HB56A19A-12 HB56A19A-12A HB56A19
Contextual Info: HB56A19 Series 1,048,576-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56A19 is a 1M x 9 dynamic RAM module, mounted nine 1-Mbit DRAM HM511000JP sealed in SOJ package. An outline of the HB56A19 is 30-pin single in-line package having Lead types (HB56A19A, HB56A19AT), Socket type

IC51-128

Abstract: transistor fpq 630 PC-68 TTP-48DF OF IC 7421 Enplas fpq Enplas PT740 AB am fm radio Hitachi DSAUTAZ005
Contextual Info: Hitachi Semiconductor Package Data Book Introduction Contents Section 1 Introduction of Packages 1.1 Types of Packages and Advantages 1.2 IC Package Name and Code Indication 1.3 Method of Indicating IC Package Dimensions 1.4 Lineups in Terms of Shapes and Materials

HT 1200-4

Abstract: YAMAICHI ic234 PT740 AB TSSOP YAMAICHI SOCKET FP-20-0.65-01 IC51-1444-1354-7 PT817 Enplas drawings IC51-2084-1052-11 IC 7418 IC51-0242-1341
Contextual Info: Hitachi Semiconductor Package Data Book ADE–410–001B 3rd Edition March/97 Semiconductor & Integrated Circuit Devision, Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher functional

Contextual Info: HM5117805 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-630B Z Rev. 2.0 Nov. 8, 1996 Description The Hitachi HM5117805 is a CMOS dynamic RAM organized 2,097,152-word X 8-bits. It uses the most advanced CMOS technology for high performance and low power. The HM5117805 offers extended data

Contextual Info: HM5117805 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-630B Z Rev. 2.0 Nov. 8, 1996 Description The Hitachi HM5117805 is a CMOS dynamic RAM organized 2,097,152-word x 8-bits. It uses the most advanced CMOS technology for high performance and low power. The HM5117805 offers extended data

HB56A18B-8A

Abstract: SIMM 30-pin HB56A18B HB56A18AT-6H "30 pin simm" 30-pin SIMM RAM 30 pin SIMM socket HB56A18B8A zp 1401 we221
Contextual Info: HB56A18 Series 1,048,576-Word x 8-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN DESCRIPTION The HB56A18 Is a 1M x 8 dynamic RAM module, mounted eight 1-Mbit DRAM HM 511000JP sealed in SOJ package. An outline of the H B56A18 is 30-pin single

HT 1200-4

Abstract: IC51-2084-1052-11 IC51-0242-1341 YAMAICHI ic234 transistor fpq 630 IC51-0404-1511 fpq-144-0.5-03 648-0482211-A01 IC189 Series Open Top SOP, SSOP, TSOP Type I a HLQFP 176 Package drawing
Contextual Info: Hitachi Semiconductor Package Data Book ADE–410–001C 4th Edition March/98 Semiconductor & Integrated Circuit Devision, Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher

77106

Abstract: CRACK DETECTION PATTERNS HM628128 reliability test data cbv 2 10910 statistical Physics Hitachi DSA00503
Contextual Info: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.

Contextual Info: H B 5 6 C 1 9 S e r i e s - 1,048,576-Word x 9-Bit High Density Dynamic RAM Module • PIN DESCRIPTION ■ DESCRIPTION The HB56C19 is a 1M x 9 static column mode dynamic RAM module, mounted nine 1-Mbit DRAM HM511002JP sealed in SOJ package. An outline of the

hitachi 28 pin plastic soj package

Contextual Info: HM621100A Series 1048576-word x 1-bit High Speed CMOS Static RAM HITACHI Description The Hitachi HM621100A is a high speed 1M Static RAM organized as 1048576-word X 1-bit. It realizes high speed access time 20/25/35 ns and low power consumption, employing CMOS process technology and

HA11466S

Abstract: hd49783fp HA11505 HA13403 HA11511CNT HA1124 HA11466 HA118121 SC-5278 HA11561
Contextual Info: Package Information Package List T V A p p lica tio n s Type No. Package Code HA1124 HA1125 HA11235 HA11247 HA11423 HA11423MP HA11431 HA11431NT HA11436A HA11440A HA11441 HA11441MP HA11442A HA11465A HA11485BNT HA11505 HA11508 HA11510NT HA11511CNT HA11513 HA11525MP

Contextual Info: HB56C18 S eries-1,048,576-Word x 8-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN DESCRIPTION The HB56C1B is a 1M x 8 static column mode dynamic RAM module, mounted eight 1-Mbit DRAM HM511002JP sealed in SOJ package. An outline of the

Contextual Info: HM67A4101 Series Under development 1048576-words x 4-bits I/O Separate Clocked Random A ccess Memory Pin Arrangement Features • 1048576-words x 4-bits organization • Directly TTL compatible input and output • C hoice o f 5.0 V or 3.3 V pow er supplies for

Contextual Info: HM67A4101 Series Under development 1048576-words x 4-bits I/O Separate Clocked Random Access Memory Pin Arrangement Features • 1048576-words x 4-bits organization • Directly TTL compatible input and output • Choice o f 5.0 V or 3.3 V power supplies for

17805T

Abstract: 51W17805 51w17805j
Contextual Info: HM51W17805 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-631B Z Rev. 2.0 Nov. 12, 1996 Description The Hitachi HM51W17805 is a CMOS dynamic RAM, organized 2,097,152-words x 8-bits. It employs the most advanced CMOS technology for high performance and low power consumption. The HM51W17805

HM51428

Contextual Info: HM514280A/AL, HM51S4280A/AL Series Preliminary 262,144-Word x 18-Bit Dynamic Random Access Memory • DESCRIPTION ■ FEATURES The Hitachi HM514280A/AL are CMOS dynamic RAM organized as 262,144-word x 18-bit. HM514280A/AL have realized higher density, higher performance and various

Contextual Info: HM62W8127H Series HM62W9127H Series Preliminary 131072-word x 8/9-bit High Speed CMOS Static RAM T he H M 62W 8127H /H M 62W 9127H is an asyncronous 3.3 V operation high speed static RAM organized as 128 kword x 8/9 bit. It realize high speed access tim e 25/30/35/45 ns with

Contextual Info: HM514800C/CL Series HM51S4800C/CL Series 524,288-word x 8-bit Dynamic Random Access Memory H I T A The H itachi H M 514800C are CM OS dynam ic R A M o rg a n iz e d as 5 2 4 ,2 8 8 -w o rd x 8 -b it. HM514800C have realized higher density, higher performance and various functions by employing

HM514270AJ8

Contextual Info: HM514270A/AL, HM51S4270A/AL Series 262,144-Word X 16-Bit Dynamic Random Access Memory • DESCRIPTION ■ FEATURES The Hitachi HM514270A/AL are CMOS dynamic RAM or­ ganized as 262,144-word x 16-bit. HM514270A/AL have re­ alized higher density, higher performance and various func­

Contextual Info: HM62W1664H Series HM62W1864H Series P r e lim in a r y 65536-word x 16/18-bit High Speed CMOS Static RAM T h e H M 6 2 W 1 6 6 4 H /H M 6 2 W 1 8 6 4 H is an asyncronous 3.3 V operation high speed static RAM organized as 64 kword x 16/18 bit. It realize h ig h sp eed access tim e 2 5 /3 0 /3 5 /4 5 ns w ith

62256 hitachi

Abstract: 28 pin plastic dip hitachi dimension hitachi PLC
Contextual Info: Reliability of Hitachi 1C Memories 1. Structure The dies of IC memories are encapsulated in various packages. The most common packages are plastic and cerdip. Plastic packages are widely used in many different types of equipment. Cerdip packaging is especially suitable in equipment