HIGH VOLTAGE HIGH FREQUENCY SWITCHING Search Results

inductive

Abstract: high voltage diodes high voltage high frequency switching DON-50
Contextual Info: DON-50 50Watt High Voltage Mountable Non-Inductive, High Frequency Resistors High Voltage 15kV,High Energy High Frequency Control with High Voltage Power Semiconductor's Switching, Pulsing, True Non-Inductive Powers. DON-50 , Non-Inductive design these elements are ideally suites for high frequency and highh voltage pulse load applications. By direct

Contextual Info: ET400 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3PF Features High voltage,High speed switching Low saturation voltage High reliability Applications Switching regulators Ultrasonic generators High frequency invertors

2SC2625

Abstract: power transistor 2sc2625 datasheet transistor 2sc2625 2sc2625 equivalent 2sC2625 transistor power transistor 2sc2625
Contextual Info: 2SC2625 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3P Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency inverters

2sc3320

Abstract: 2sc3320 equivalent 2sc3320 transistor
Contextual Info: 2SC3320 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3P Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency inverters

2SC2929

Contextual Info: 2SC2929 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE, HIGH SPEED SWITCHING Outline Drawings TO-220AB Features High voltage, High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency inverters

Contextual Info: 2SC3551 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3P Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency inverters

2SC2626

Contextual Info: 2SC2626 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3P Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency inverters

High Current Switching Applications transistor

Contextual Info: 2SC3723 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-220AB Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency inverters

2sc3030

Abstract: TRIPLE DIFFUSED PLANER TYPE POWER DARLINGTON HIGH HIGH CURRENT HIGH SPEED SWITCHING TRIPLE DIFFUSED PLANER TYPE HIGH CURRENT HIGH SPEED
Contextual Info: 2SC3030 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE, HIGH SPEED SWITCHING Outline Drawings TO-3P Features High voltage,High speed switching High reliability Applications Switching regulators Uitrasonic generators High frequency inverters

25C1740

Abstract: 35GP120B2DF2 228F APT35GP120B T0-247 70A 1200V IGBTS 35GP120B
Contextual Info: APT35GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

INFORMATION OF IC 7424

Abstract: APT75GP120B2
Contextual Info: APT75GP120B2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

228F

Abstract: APT35GP120B T0-247
Contextual Info: APT35GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

Contextual Info: APT45GP120B2DF2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

Contextual Info: APT45GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

7406 50 amp igbt

Abstract: datasheet IC 7406 7406 35GP120B
Contextual Info: APT35GP120B 1200V Mos 7™ Ultra Fast IGBT The Mos 7 Ultra Fast IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

APT45GP120B

Abstract: T0-247
Contextual Info: APT45GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

Contextual Info: ET405 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3PF Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency invertors General purpose power amplifiers

ET206

Contextual Info: ET206 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3P Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency invertors General purpose power amplifiers

UJ 45A diode

Contextual Info: APT45GP120JDF2 1200V E E POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

Contextual Info: APT80GP60JDF3 600V POWER MOS 7 IGBT E E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

Contextual Info: APT80GP60JDF3 600V POWER MOS 7 IGBT E E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

APT80GP60JD3

Contextual Info: APT80GP60J 600V POWER MOS 7 IGBT E E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

IC 7413

Abstract: APT15GP60B T0-247
Contextual Info: APT15GP60B 600V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

IC 7418

Abstract: IC 7418 datasheet APT15GP60K
Contextual Info: APT15GP60K 600V POWER MOS 7 IGBT TO-220 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency