HIGH VOLTAGE DIODE 40 NS Search Results
HIGH VOLTAGE DIODE 40 NS Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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GC331AD7LQ103KX18D | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive | |||
GC331CD7LP683KX19L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive | |||
GC332QD7LP104KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive | |||
GC355DD7LP684KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive | |||
GR331AD7LP333KW01D | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for General Purpose |
HIGH VOLTAGE DIODE 40 NS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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byv10-40Contextual Info: BYV10-40 SCHOTTKY BARRIER DIODE DO - 41 PRV : 40 Volts Io : 1.0 Ampere FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency 1.00 25.4 |
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BYV10-40 DO-41 UL94V-O MIL-STD-202, byv10-40 | |
Schaffner NSG 500 c
Abstract: Schaffner NSG
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LDP24A Schaffner NSG 500 c Schaffner NSG | |
INNER CARTON LABEL
Abstract: 1N-SS254 SEMTECH LABEL
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1N-SS254 100mA DO-34 50kpcs INNER CARTON LABEL 1N-SS254 SEMTECH LABEL | |
SS-254
Abstract: INNER CARTON LABEL 1N-SS254
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1N-SS254 100mA DO-34 50kpcs SS-254 INNER CARTON LABEL 1N-SS254 | |
1N-SS254
Abstract: 1N 2002 diode INNER CARTON LABEL
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1N-SS254 100mA DO-34 50kpcs 1N-SS254 1N 2002 diode INNER CARTON LABEL | |
Honey Technology
Abstract: carton box 1N-SS254 0092G SEMTECH LABEL SS-254 ss254 HONEY
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1N-SS254 100mA DO-34 50kpcs Honey Technology carton box 1N-SS254 0092G SEMTECH LABEL SS-254 ss254 HONEY | |
Contextual Info: LL60/LL60P Schottky Barrier Diodes * “G” Lead Pb -Free Schottky Barrier Diode 30-50 mAMPERES 40-45 VOLTS Features: *Silicon Epitaxial Planner Diode *Low Reverse Current and Low Forward Voltage *Low Current Rectification and High Speed Switching *High Reliability |
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LL60/LL60P OD-80) LL60P | |
transistor c 6073
Abstract: PTC6072 c 6073 PTC6073 TF PTC 6073 Darlington NPN Silicon Diode "Power Diode" Darlington 40A ic c 6073
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OCR Scan |
I-----1-7-10% transistor c 6073 PTC6072 c 6073 PTC6073 TF PTC 6073 Darlington NPN Silicon Diode "Power Diode" Darlington 40A ic c 6073 | |
MELF DIODE color bands
Abstract: minimelf diodes color MINI-MELF Schottky melf LL60P melf Schottky mini melf diode glass mini melf diode SCHOTTKY DIODE SOD-80 Schottky melf 30 mA
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LL60/LL60P OD-80) LL60P MELF DIODE color bands minimelf diodes color MINI-MELF Schottky melf LL60P melf Schottky mini melf diode glass mini melf diode SCHOTTKY DIODE SOD-80 Schottky melf 30 mA | |
sd diode sod-323
Abstract: B0520LWS B0530WS B0540WS
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B0520LWS B0530WS/B0540WS OD-323 MIL-STD-202, OD-323 19-May-06 19-May-06 sd diode sod-323 B0520LWS B0530WS B0540WS | |
Contextual Info: CHENMKO ENTERPRISE CO.,LTD BAS40APT SURFACE MOUNT SCHOTTKY DIODE VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. SOT-23 * High speed. (TRR=2.5nSec Typ.) * Suitable for high packing density. |
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BAS40APT OT-23) 200mW. | |
Contextual Info: CHENMKO ENTERPRISE CO.,LTD BAS40APT SURFACE MOUNT SCHOTTKY DIODE VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. SOT-23 * High speed. (TRR=2.5nSec Typ.) * Suitable for high packing density. |
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BAS40APT OT-23) 200mW. | |
BAS40PTContextual Info: CHENMKO ENTERPRISE CO.,LTD BAS40PT SURFACE MOUNT SCHOTTKY DIODE VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. SOT-23 * High speed. (TRR=2.5nSec Typ.) * Suitable for high packing density. |
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BAS40PT OT-23) 200mW. BAS40PT | |
Contextual Info: CHENMKO ENTERPRISE CO.,LTD BAS40CPT SURFACE MOUNT SCHOTTKY DIODE VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. SOT-23 * High speed. (TRR=2.5nSec Typ.) * Suitable for high packing density. |
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BAS40CPT OT-23) 200mW. | |
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BAS40AGPContextual Info: CHENMKO ENTERPRISE CO.,LTD BAS40AGP SURFACE MOUNT SCHOTTKY DIODE VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. SOT-23 * High speed. (TRR=2.5nSec Typ.) * Suitable for high packing density. |
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BAS40AGP OT-23) 200mW. 300mA. BAS40AGP | |
BAS40GPContextual Info: CHENMKO ENTERPRISE CO.,LTD BAS40GP SURFACE MOUNT SCHOTTKY DIODE VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. SOT-23 * High speed. (TRR=2.5nSec Typ.) * Suitable for high packing density. |
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BAS40GP OT-23) 200mW. BAS40GP | |
Contextual Info: CHENMKO ENTERPRISE CO.,LTD BAS40SPT SURFACE MOUNT SCHOTTKY DIODE VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. SOT-23 * High speed. (TRR=2.5nSec Typ.) * Suitable for high packing density. |
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BAS40SPT OT-23) 200mW. | |
Contextual Info: CHENMKO ENTERPRISE CO.,LTD BAS40PT SURFACE MOUNT SCHOTTKY DIODE VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. SOT-23 * High speed. (TRR=2.5nSec Typ.) * Suitable for high packing density. |
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BAS40PT OT-23) | |
BAS40CGPContextual Info: CHENMKO ENTERPRISE CO.,LTD BAS40CGP SURFACE MOUNT SCHOTTKY DIODE VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. SOT-23 * High speed. (TRR=2.5nSec Typ.) * Suitable for high packing density. |
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BAS40CGP OT-23) 200mW. 300mA. BAS40CGP | |
Contextual Info: CHENMKO ENTERPRISE CO.,LTD BAS40CPT SURFACE MOUNT SCHOTTKY DIODE VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. SOT-23 * High speed. (TRR=2.5nSec Typ.) * Suitable for high packing density. |
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BAS40CPT OT-23) 200mW. | |
BAS40SPTContextual Info: CHENMKO ENTERPRISE CO.,LTD BAS40SPT SURFACE MOUNT SCHOTTKY DIODE VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. SOT-23 * High speed. (TRR=2.5nSec Typ.) * Suitable for high packing density. |
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BAS40SPT OT-23) BAS40SPT | |
Contextual Info: 2GWJ42 SCHOTTKY BARRIER DIODE D2 PRV : 40 Volts Io : 2.0 Ampere FEATURES : * * * * * * 1.00 25.4 MIN. 0.161 (4.1) 0.154 (3.9) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency |
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2GWJ42 UL94V-O MIL-STD-202, | |
BAS40
Abstract: BAS40-04 BAS40-05 BAS40-06
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BAS40 BAS40-06 200mW OT-23 OT-23, BAS40-05 BAS40-04 BAS40 BAS40-06) BAS40-04 BAS40-05 BAS40-06 | |
BAS40VGPContextual Info: CHENMKO ENTERPRISE CO.,LTD BAS40VGP SURFACE MOUNT SCHOTTKY DIODE VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. SOT-563 SOT-563 * High speed. (TRR=2.5nSec Typ.) * Suitable for high packing density. |
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BAS40VGP OT-563) OT-563 150mW. BAS40VGP |