HIGH VOLTAGE DIODE 100 KV Search Results

BYV32E

Abstract: BYV32E-100 BYV32EB
Contextual Info: BYV32E-100 Dual rugged ultrafast rectifier diode, 20 A, 100 V Rev. 04 — 2 March 2009 Product data sheet 1. Product profile 1.1 General description Ultrafast dual epitaxial rectifier diode in a SOT78 TO-220AB plastic package. 1.2 Features and benefits „ High reverse voltage surge capability

Edal Series BR1064-2 Silicon High Voltage Board Rectifier

Abstract: br1064 diode piv 10 rectifier diode piv Edal
Contextual Info: Edal SERIES BR1064-2 SILICON HIGH VOLTAGE BOARD RECTIFIER ELECTRICAL SPECIFICATIONS PIV VOLTS 10,000 V Io (IN 55o C OIL 200 mA Vf @ 100 Ma 15 V Max Ir @ PIV @ 25o C 5 uA Max Trr @ If = 50mA, Ir = 100 mA, Recovery to 25 mA 250 nSec Max Diode driven to 5 mA Peak, Reverse slope to be steep and stable

HCPL-2731

Abstract: FAIRCHILD 2731 OPTOCOUPLER+HP+2730 rs 2731 HCPL-2730 6N139 HCPL 2731 2730 74LSxx 6N138
Contextual Info: Single-Channel: 6N138, 6N139 Dual-Channel: HCPL-2730, HCPL-2731 Low Input Current High Gain Split Darlington Optocouplers tm Features Description • ■ ■ ■ ■ ■ Low current - 0.5 mA Superior CTR-2000% Superior CMR-10 kV/µs CTR guaranteed 0-70°C

HCPL-2731

Abstract: 6N138 6N138V 6N139 HCPL-2730 EIA-RS232
Contextual Info: Single-Channel: 6N138, 6N139 Dual-Channel: HCPL-2730, HCPL-2731 Low Input Current High Gain Split Darlington Optocouplers Features Description • ■ ■ ■ ■ ■ Low current - 0.5 mA Superior CTR-2000% Superior CMR-10 kV/µs CTR guaranteed 0-70°C U.L. recognized File # E90700

PS8701

Abstract: PS8701-E3 PS8701-E4 PS8701-F3 PS8701-F4 PC 13005
Contextual Info: HIGH NOISE REDUCTION HIGH SPEED ANALOG OUTPUT 5 PIN SOP OPTOCOUPLER PS8701 FEATURES DESCRIPTION • HIGH COMMON MODE TRANSISENT IMMUNITY: CMH,CML: ±10 kV/µs MIN The PS8701 is an optically coupled isolator containing a GaAIAs LED on the light emitting diode input side and a PIN

OPI1268S

Abstract: optoisolator high voltage, high current optoisolator high voltage dc to dc Optoisolator EN60079-11 OPI1268 EN60079-1
Contextual Info: OPI1268S High Voltage / High Speed Opto-Isolator Features: Certifications: • • • • • • • • UL File # E58730 • Vde File #40031798 • IECEx BAS 11.0123u 20kV Isolation 30 kV/ S dv/dt immunity 2 Mbit/s transfer rate tPHL-tPLH ≤ 50 ns Creepage path: 24 mm

opto isolator photodiode

Abstract: OPTO-ISOLATOR optoisolator high voltage, high current OPTO-ISOLATOR photo diode OPTO ISOLATOR high temperature 20KV OPI1268 OPL550 OPI1268S
Contextual Info: OPI1268S High Voltage / High Speed Opto-Isolator Features: Certifications: • • • • • • • • • • • 20KV Isolation 30 KV/uS dv/dt immunity 2 Mbit/s transfer rate tPHL-tPLH ≤ 50 ns Creepage path: 24 mm TTL Compatible 6 Axis / 10G load rating

IRFI530GPBF

Abstract: 58AB IRFI530G SiHFI530G SiHFI530G-E3
Contextual Info: IRFI530G, SiHFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating

SiHFI9540G

Abstract: SiHFI9540G-E3 IRFI9540G
Contextual Info: IRFI9540G, SiHFI9540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • P-Channel • 175 °C Operating Temperature

IRFI520G

Contextual Info: IRFI520G, SiHFI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating

Contextual Info: VBUS054B-HS3 Vishay Semiconductors 4-Line BUS-port ESD-protection Features • • • • • Ultra compact LLP75-6A package 4-line USB ESD-protection e3 Low leakage current Low load capacitance CD = 0.8 pF ESD-protection to IEC 61000-4-2 ± 15 kV contact discharge

SiHFIZ34G

Abstract: SiHFIZ34G-E3 IRFIZ34 IRFIZ34G
Contextual Info: IRFIZ34G, SiHFIZ34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating

IRFI9620G

Abstract: SiHFI9620G SiHFI9620G-E3
Contextual Info: IRFI9620G, SiHFI9620G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • P-Channel • Dynamic dV/dt • Low Thermal Resistance

IRFIBE30G

Abstract: SiHFIBE30G SiHFIBE30G-E3
Contextual Info: IRFIBE30G, SiHFIBE30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance

SiHFI9640G

Abstract: IRFI9610G IRFI9640G SiHFI9640G-E3
Contextual Info: IRFI9610G, SiHFI9610G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance

IRLI620G

Contextual Info: IRLI620G, SiHLI620G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4V and 5 V

IRFIZ24G

Abstract: SiHFIZ24G SiHFIZ24G-E3
Contextual Info: IRFIZ24G, SiHFIZ24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating

SiHFIBF20G

Abstract: IRFIBF20G SiHFIBF20G-E3
Contextual Info: IRFIBF20G, SiHFIBF20G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS V 900 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 8.0 Qg (Max.) (nC) 38 • Dynamic dV/dt Rating Qgs (nC) 4.7 • Low Thermal Resistance

IRLIZ24G

Abstract: SiHLIZ24G-E3 SiHLIZ24G
Contextual Info: IRLIZ24G, SiHLIZ24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V

IRFI840G

Abstract: SiHFI840G SiHFI840G-E3
Contextual Info: IRFI840G, SiHFI840G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance

IRLI640G

Abstract: SiHLI640G SiHLI640G-E3
Contextual Info: IRLI640G, SiHLI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4V and 5 V

IRFI840G

Abstract: SiHFI840G SiHFI840G-E3
Contextual Info: IRFI840G, SiHFI840G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance

IRFIZ24G

Abstract: SiHFIZ24G SiHFIZ24G-E3
Contextual Info: IRFIZ24G, SiHFIZ24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating

IRFIBE20G

Abstract: SiHFIBE20G SiHFIBE20G-E3
Contextual Info: IRFIBE20G, SiHFIBE20G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance