HIGH VOLTAGE DIODE 100 KV Search Results

CPC7557

Contextual Info: CPC7557 Diode Bridge INTEGRATED CIRCUITS DIVISION Bridge Characteristics Parameter Description Rating Units Reverse Voltage 100 V Forward Current 240 mArms The CPC7557N is an integrated diode bridge built on IXYS Integrated Circuits Division’s High Voltage SOI

Contextual Info: CPC7557 Diode Bridge Bridge Characteristics Parameter Description Rating Units Reverse Voltage 100 V Forward Current 240 mArms The CPC7557N is an integrated diode bridge built on Clare’s High Voltage SOI technology. Features Ordering Information • Monolithic Construction

Contextual Info: CPC7557 Diode Bridge Bridge Characteristics Parameter Description Rating Units Reverse Voltage 100 V Forward Current 240 mArms The CPC7557N is an integrated diode bridge built on Clare’s High Voltage SOI technology. Features • Monolithic Construction • Surface Mount Package

Contextual Info: CPC7557 Diode Bridge Bridge Characteristics Parameter Description Rating Units Reverse Voltage 100 V Forward Current 240 mArms The CPC7557N is an integrated diode bridge built on Clare’s High Voltage SOI technology. Features • Monolithic Construction • Surface Mount Package

JESD-625

Abstract: EIA-481-2 J-STD-033
Contextual Info: CPC7557 Diode Bridge Bridge Characteristics Parameter Description Rating Units Reverse Voltage 100 V Forward Current 240 mArms The CPC7557N is an integrated diode bridge built on Clare’s High Voltage SOI technology. Features • Monolithic Construction • Surface Mount Package

BYV32E

Abstract: BYV32E-100 BYV32EB
Contextual Info: BYV32E-100 Dual rugged ultrafast rectifier diode, 20 A, 100 V Rev. 04 — 2 March 2009 Product data sheet 1. Product profile 1.1 General description Ultrafast dual epitaxial rectifier diode in a SOT78 TO-220AB plastic package. 1.2 Features and benefits „ High reverse voltage surge capability

LS4148W

Contextual Info: LITE-ON SEMICONDUCTOR LS4148W REVERSE VOLTAGE - 100 V POWER DISSIPATION - 400 mW SURFACE MOUNT FAST SWITCHING DIODE FEATURES 1206 For surface mounted application Silicon epitaxial planar diode High speed switching Ultra small surface mount package Low leakage current

LS4448W

Contextual Info: LITE-ON SEMICONDUCTOR LS4448W REVERSE VOLTAGE - 100 V POWER DISSIPATION - 400 mW SURFACE MOUNT FAST SWITCHING DIODE FEATURES 1206 For surface mounted application Silicon epitaxial planar diode High speed switching Ultra small surface mount package Low leakage current

Contextual Info: FAST RECOVERY DIODE 11DF1 11DF2 1.1A/100— 200V/trr : 30nsec FEATURES • Miniature Size t Z kV- p.7 .106 t-jt . i2.3(.091) • Ultra - Fast Recovery • Low Forward Voltage Drop 0.91035) nI a 0.7(.027) • Low Power Loss, High Efficiency 27(1.06) M IN ° High Surge Capability

Contextual Info: QR_3310001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Fast Recovery Diode Module 100 Amperes/3300 Volts A F D G H H G E B M THD (3 PLACES) Description: High voltage diodes feature highly insulating housings that offer

Edal Series BR1064-2 Silicon High Voltage Board Rectifier

Abstract: br1064 diode piv 10 rectifier diode piv Edal
Contextual Info: Edal SERIES BR1064-2 SILICON HIGH VOLTAGE BOARD RECTIFIER ELECTRICAL SPECIFICATIONS PIV VOLTS 10,000 V Io (IN 55o C OIL 200 mA Vf @ 100 Ma 15 V Max Ir @ PIV @ 25o C 5 uA Max Trr @ If = 50mA, Ir = 100 mA, Recovery to 25 mA 250 nSec Max Diode driven to 5 mA Peak, Reverse slope to be steep and stable

Diode 31DQ06

Abstract: Diode 31DQ05 31DQ05 31DQ06 BACR
Contextual Info: SCHOTTKY BARRIER DIODE 31DQ05 31DQ06 3.3A/50— 60V FEATURES ° Low Forward Voltage Drop 5.^.23 D IA ° Low Power L o s s , High Efficiency 1.5 .059) n l . 1.3(.051) ° High Surge Capability 21(.83) MIN 30 Volts through 100 Volts Types Available *Ü 1.5(.059) T-.T »

high voltage rectifier diode

Contextual Info: 4-5 High Voltage Rectifier Diode Category V RM kV Part Nubmer IF(AV) (mA) IFSM (A) 50Hz Tc (°C) Tstg (°C) VF (V) max Single Half Sine Wave General-purpose For general FBT For high frequency multilayer FBT For ultra-high frequency multilayer FBT IR IF (µA)

2E14

Abstract: 4h sic
Contextual Info: Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields Mrinal K. Dasa, Joseph J. Sumakeris, Brett A. Hull, Jim Richmond, Sumi Krishnaswami and Adrian R. Powell Cree, Inc., 4600 Silicon Drive, Durham, NC, 27703, USA a Mrinal_Das@Cree.com Keywords: PiN Diode, High Voltage, Vf drift, BPD, device yield

B550 transistor

Abstract: diode 606 transistor r 606 j optocouple VF125 Not3
Contextual Info: SIEMENS AKTIEN6ESELLSCHAF 47E J> • S IEM EN S fl23Sb05 00272<ÏD fl « S I E G SFH 606 5.3 kV TRIOS* OPTOCOUPLER HIGH REL/FAST TRANSISTOR FEATURES DESCRIPTION * Isolation Test Voltage: 5300 V * High Current Transfer Ratios at 10 mA: 63-125% at 1 mA: >22%

the calculation of the power dissipation for the igbt and the inverse diode in circuits

Abstract: IGCT 10 kw schematic induction heating "the calculation of the power dissipation for the igbt and the inverse diode in circuits" IGCT thyristor calculation of IGBT snubber snubber IGCT IEGT abb press-pack igbt igbt inverter schematic induction heating
Contextual Info: Positive development in power electronics New 5.2kV Extra Fast Recovery Diode for IGBT and IGCT Applications. New 5.2 kV Extra Fast Recovery Diode for IGBT and IGCT Applications A. Golland, F. J. Wakeman, G. Li Westcode Semiconductors Ltd, Langley Park, Chippenham, SN15 1GE, UK

smd Optocoupler 601

Abstract: B550 transistor transistor smd TU 3 smd diode bd SFH6016
Contextual Info: SIE MEN S A K T I E N G E S E L L S C H A F 47E D 6235b05 0027312 3 « S I E G SIEM ENS SFH 6016 5.3 kV TRIOS* OPTOCOUPLER HIGH RELIABILITY _ -7 ^ - 0 3 Package Dimensions mm 6.3 6 Anode - 1 I> 5 Cathode - 2 I> O J> _ r 4 not connected - 3

Contextual Info: SHV-06JN High Voltage Rectifier Diode Features and Benefits Description ▪ High Peak Reverse Voltage, VRM : 3.0 kV ▪ Low Forward Voltage, VF : 6.0 V max. at IF = 10 mA ▪ Peak Forward Surge Current, IFSM : 3 A ▪ Average Forward Current, IF(AV) : 30 mA

Contextual Info: SHV-06JN High Voltage Rectifier Diode Features and Benefits Description ▪ High Peak Reverse Voltage, VRM : 3.0 kV ▪ Low Forward Voltage, VF : 6.0 V max. at IF = 10 mA ▪ Peak Forward Surge Current, IFSM : 3 A ▪ Average Forward Current, IF(AV) : 30 mA

12/a1273 y k transistor

Contextual Info: CNX21 y V HIGH-VOLTAGE OPTOCOUPLER Optically coupled isolator consisting of an infrared emitting GaAs diode and a silicon n-p-n photo­ transistor. The base is not accessible. Features o f this product: • very high isolation voltage o f 10 kV d.c. . • working voltage o f 10 kV (d.c.).

Contextual Info: IRFI530G Power MOSFET TO-220 FULLPAK D FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS t = 60 s; f = 60 Hz • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance

HCPL-2731

Abstract: FAIRCHILD 2731 OPTOCOUPLER+HP+2730 rs 2731 HCPL-2730 6N139 HCPL 2731 2730 74LSxx 6N138
Contextual Info: Single-Channel: 6N138, 6N139 Dual-Channel: HCPL-2730, HCPL-2731 Low Input Current High Gain Split Darlington Optocouplers tm Features Description • ■ ■ ■ ■ ■ Low current - 0.5 mA Superior CTR-2000% Superior CMR-10 kV/µs CTR guaranteed 0-70°C

Contextual Info: SHV-05J High Voltage Rectifier Diode Features and Benefits Description ▪ High Peak Reverse Voltage, VRM : 2.5 kV ▪ Low Forward Voltage, VF : 5.0 V max. at IF = 10 mA ▪ Peak Forward Surge Current, IFSM : 3 A ▪ Average Forward Current, IF(AV) : 30 mA

Contextual Info: IRFI9Z24G Power MOSFET FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS t = 60 s; f = 60 Hz • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance