HIGH VOLTAGE 8 AND 16 AMP Search Results
HIGH VOLTAGE 8 AND 16 AMP Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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GC331AD7LQ103KX18D | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive | |||
GC331CD7LP683KX19L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive | |||
GC332QD7LP104KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive | |||
GC355DD7LP684KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive | |||
GR331AD7LP333KW01D | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for General Purpose |
HIGH VOLTAGE 8 AND 16 AMP Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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KVA-500
Abstract: SB98107 4530 bussmann
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SB98107 KVA-500 SB98107 4530 bussmann | |
Contextual Info: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A |
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CY62157EV18 CY62157DV18 CY62157DV20 48-ball | |
BS616LV8021
Abstract: BS616LV8021AC BS616LV8021AI 100PF BGA-48-0608
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BS616LV8021 BS616LV8021 70/100ns au6LV8021 100ns -40oC R0201-BS616LV8021 BS616LV8021AC BS616LV8021AI 100PF BGA-48-0608 | |
BGA-48-0608
Abstract: BS616UV2021 BS616UV2021AC BS616UV2021AI BS616UV2021DC BS616UV2021DI
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BS616UV2021 BS616UV2021 70/100ns -40oC R0201-BS616UV2021 BGA-48-0608 BS616UV2021AC BS616UV2021AI BS616UV2021DC BS616UV2021DI | |
TBA 1404
Abstract: BGA-48-0608 BS616LV2021 BS616LV2021AC BS616LV2021AI BS616LV2021DC BS616LV2021DI
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BS616LV2021 BS616LV2021 70/100ns R0201-BS616LV2021 TBA 1404 BGA-48-0608 BS616LV2021AC BS616LV2021AI BS616LV2021DC BS616LV2021DI | |
CY62157DV18
Abstract: CY62157DV20 CY62157EV18
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CY62157EV18 CY62157DV18 CY62157DV20 CY62157DV20 | |
Contextual Info: G5RL-U/-K PCB Power Relay 16 A High Switching Current, General-purpose Latching Relay • Creepage distance 8 mm between coil and contacts. • 10 kV Impulse withstand voltage. • Ambient Operating Temperature 85°C • Suitable for TV-8 rating. SPST-NO (1a |
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K265-E1-04 | |
LTDRZ
Abstract: LTC2634-L LTC2634-LZ12 LDRB SOT-23 LTC2634 LTC2634-12 LTC2634C LTC2634H LTC2634-H LTC2634I
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LTC2634 12-/10-/8-Bit 10ppm/ 16-lead 10-lead LTC2634-L LTC2634-H 10ppmpm/ LTC2636 LTDRZ LTC2634-LZ12 LDRB SOT-23 LTC2634 LTC2634-12 LTC2634C LTC2634H LTC2634I | |
200G
Abstract: BYW51
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BYW51-200 BYW51-200/D 200G BYW51 | |
200G
Abstract: BYV32
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BYV32-200 BYV32-200/D 200G BYV32 | |
Contextual Info: MX29L8100G 8M-BIT [1M x 8/512K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH SUPER SOLUTION FOR HIGH SPEED EPROM FEATURES • Single-supply voltage range 3.0V to 3.6V for read and write • Endurance 10 cycles • Fast access time: 100ns • Optimized block architecture |
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MX29L8100G 8/512K 100ns 16K-block) PM0558 -100mA 100mA | |
Contextual Info: CY62157ESL MoBL 8-Mbit 512K x 16 Static RAM Features • Very high speed: 45 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical Standby current: 2 A ❐ Maximum Standby current: 8 A ■ Ultra low active power |
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CY62157ESL I/O15) | |
Contextual Info: R1LV0816ABG -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0393-0100 Rev.1.00 2009.12.08 Description The R1LV0816ABG is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies. |
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R1LV0816ABG 16bit) REJ03C0393-0100 288-words 16-bit, 48balls | |
Contextual Info: R1LV0816ABG -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0393-0100 Rev.1.00 2009.12.08 Description The R1LV0816ABG is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies. |
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R1LV0816ABG 16bit) REJ03C0393-0100 288-words 16-bit, 48balls | |
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R1LV0816ASB
Abstract: R1LV0816ASB-5SI R1LV0816A R1LV0816ASB-7SI
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R1LV0816ASB 16bit) REJ03C0387-0100 R1LV0816ASB 288-words 16-bit, 44pin 44-pin R1LV0816ASB-5SI R1LV0816A R1LV0816ASB-7SI | |
Contextual Info: R1LV0816ASB – 5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0387-0100 Rev.1.00 2009.12.07 Description The R1LV0816ASB is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies. |
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R1LV0816ASB 16bit) REJ03C0387-0100 R1LV0816ASB 288-words 16-bit, 44pin 44-pin | |
R1LV0816ASB-5SI
Abstract: R1LV0816A
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R1LV0816ASB 16bit) REJ03C0387-0100 R1LV0816ASB 288-words 16-bit, 44pin 44-pin R1LV0816ASB-5SI R1LV0816A | |
Contextual Info: SCAN16512 October 21, 2011 Low Voltage Universal 16-bit IEEE 1149.1 Bus Transceiver with TRI-STATE Outputs General Description Features The SCAN16512 is a high speed, low-power universal bus transceiver featuring data inputs organized into two 8-bit bytes with output enable and latch enable control signals. This |
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SCAN16512 16-bit SCAN16512 | |
LTC2635-LMO
Abstract: LTC2635-L LTC2635H LM08 LTC2635 LTC2635-12 LTC2635C LTC2635-H LTC2635-LMI12 LTC2635-LMI10
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LTC2635 12-/10-/8-Bit 10ppm/ 16-pin 10-lead LTC2635-L LTC2635-H LTC2635-L/ LTC2635-LMO LTC2635H LM08 LTC2635 LTC2635-12 LTC2635C LTC2635-LMI12 LTC2635-LMI10 | |
Contextual Info: ST72325 8-bit MCU with 16 to 60K Flash/ROM, ADC, CSS, 5 timers, SPI, SCI, I2C interface Features • ■ ■ ■ ■ Memories – 16K to 60K dual voltage High Density Flash HDFlash or up to 32K ROM with read-out protection capability. In-Application Programming and In-Circuit Programming for HDFlash |
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ST72325 ST72F325K6T3 ST72325K6 ST72325 \TEMP\SGST\ST72F325K6T3 21-Aug-2007 | |
bldc sensorless 12v brushless motor driver
Abstract: ic1 ne555 PIR SENSOR stabilization dali source code DELTA dvp smd code marking NEC LQFP32 LQFP44 LQFP48 LQFP64
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ST72325 bldc sensorless 12v brushless motor driver ic1 ne555 PIR SENSOR stabilization dali source code DELTA dvp smd code marking NEC LQFP32 LQFP44 LQFP48 LQFP64 | |
200khz ultrasonic transducers
Abstract: High Output Current Amplifiers qxga ca3140 equivalents EL1510 MAKING LD MV SOT23 EL5104 CA3240 86 sot23-8
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EL1526 EL1527 1-888-INTERSIL LC-026 200khz ultrasonic transducers High Output Current Amplifiers qxga ca3140 equivalents EL1510 MAKING LD MV SOT23 EL5104 CA3240 86 sot23-8 | |
ADC Key 1 603 rs232
Abstract: ISL26104 isl26102 ISL3152 ADS1232 use for weighing ads1232 weigh scale schematic PR40-Precision-SOI schematic diagram PWM solar charger solar usb charger schematic ECG sensor
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1-888-INTERSIL D-85737 LC-096 ADC Key 1 603 rs232 ISL26104 isl26102 ISL3152 ADS1232 use for weighing ads1232 weigh scale schematic PR40-Precision-SOI schematic diagram PWM solar charger solar usb charger schematic ECG sensor | |
Contextual Info: TS982 Wide bandwidth, dual bipolar operational amplifier Datasheet - production data Description The TS982 device is a dual operational amplifier able to drive 200 mA down to voltages as low as 2.7 V. The SO-8 exposed-pad package allows high current output at high ambient temperatures |
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TS982 TS982 DocID009557 |