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    HIGH VOLTAGE 8 AND 16 AMP Search Results

    HIGH VOLTAGE 8 AND 16 AMP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GC331AD7LQ103KX18D
    Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive PDF
    GC331CD7LP683KX19L
    Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive PDF
    GC332QD7LP104KX18L
    Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive PDF
    GC355DD7LP684KX18L
    Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive PDF
    GR331AD7LP333KW01D
    Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for General Purpose PDF

    HIGH VOLTAGE 8 AND 16 AMP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    KVA-500

    Abstract: SB98107 4530 bussmann
    Contextual Info: Bussmann Buss High Voltage Fuses HV Series 1000 - 10,000 Volts HVA 1000 Volts Amps 1/16 1/8 1/4 1/10 2/10 3/10 3/8 1/2 CATALOG SYMBOL: HVA, HVB, HVJ, HVL, HVR, HVT, HVU, HVW, AND HVX NON-TIME DELAY 1000 TO 10,000 VOLTS • Non-Time Delay fuses for high voltage instruments and circuits.


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    SB98107 KVA-500 SB98107 4530 bussmann PDF

    Contextual Info: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A


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    CY62157EV18 CY62157DV18 CY62157DV20 48-ball PDF

    BS616LV8021

    Abstract: BS616LV8021AC BS616LV8021AI 100PF BGA-48-0608
    Contextual Info: BSI Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable BS616LV8021 „ DESCRIPTION „ FEATURES The BS616LV8021 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 words by 16 bits or 1,048,576 bytes by 8 bits selectable by CIO pin and operates from


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    BS616LV8021 BS616LV8021 70/100ns au6LV8021 100ns -40oC R0201-BS616LV8021 BS616LV8021AC BS616LV8021AI 100PF BGA-48-0608 PDF

    BGA-48-0608

    Abstract: BS616UV2021 BS616UV2021AC BS616UV2021AI BS616UV2021DC BS616UV2021DI
    Contextual Info: BSI Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BS616UV2021 „ DESCRIPTION „ FEATURES The BS616UV2021 is a high performance, Ultra low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits or 262,144 bytes by 8 bits selectable by CIO pin and operates from a wide


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    BS616UV2021 BS616UV2021 70/100ns -40oC R0201-BS616UV2021 BGA-48-0608 BS616UV2021AC BS616UV2021AI BS616UV2021DC BS616UV2021DI PDF

    TBA 1404

    Abstract: BGA-48-0608 BS616LV2021 BS616LV2021AC BS616LV2021AI BS616LV2021DC BS616LV2021DI
    Contextual Info: BSI Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BS616LV2021 „ DESCRIPTION „ FEATURES The BS616LV2021 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits or 262,144 bytes by 8 bits selectable by CIO pin and operates from a wide


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    BS616LV2021 BS616LV2021 70/100ns R0201-BS616LV2021 TBA 1404 BGA-48-0608 BS616LV2021AC BS616LV2021AI BS616LV2021DC BS616LV2021DI PDF

    CY62157DV18

    Abstract: CY62157DV20 CY62157EV18
    Contextual Info: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM Features deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • Very high speed: 55 ns • Wide voltage range: 1.65V–2.25V


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    CY62157EV18 CY62157DV18 CY62157DV20 CY62157DV20 PDF

    Contextual Info: G5RL-U/-K PCB Power Relay 16 A High Switching Current, General-purpose Latching Relay • Creepage distance 8 mm between coil and contacts. • 10 kV Impulse withstand voltage. • Ambient Operating Temperature 85°C • Suitable for TV-8 rating. SPST-NO (1a


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    K265-E1-04 PDF

    LTDRZ

    Abstract: LTC2634-L LTC2634-LZ12 LDRB SOT-23 LTC2634 LTC2634-12 LTC2634C LTC2634H LTC2634-H LTC2634I
    Contextual Info: LTC2634 Quad 12-/10-/8-Bit Rail-to-Rail DACs with 10ppm/°C Reference FEATURES DESCRIPTION n The LTC 2634 is a family of quad 12-, 10- and 8-bit voltage output DACs with an integrated, high accuracy, low drift 10ppm/°C reference in 16-lead QFN and 10-lead


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    LTC2634 12-/10-/8-Bit 10ppm/ 16-lead 10-lead LTC2634-L LTC2634-H 10ppmpm/ LTC2636 LTDRZ LTC2634-LZ12 LDRB SOT-23 LTC2634 LTC2634-12 LTC2634C LTC2634H LTC2634I PDF

    200G

    Abstract: BYW51
    Contextual Info: BYW51−200 SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 16 A Total 8 A Per Diode Leg Pb−Free Packages are Available*


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    BYW51-200 BYW51-200/D 200G BYW51 PDF

    200G

    Abstract: BYV32
    Contextual Info: BYV32−200 SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 16 A Total 8 A Per Diode Leg Pb−Free Packages are Available*


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    BYV32-200 BYV32-200/D 200G BYV32 PDF

    Contextual Info: MX29L8100G 8M-BIT [1M x 8/512K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH SUPER SOLUTION FOR HIGH SPEED EPROM FEATURES • Single-supply voltage range 3.0V to 3.6V for read and write • Endurance 10 cycles • Fast access time: 100ns • Optimized block architecture


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    MX29L8100G 8/512K 100ns 16K-block) PM0558 -100mA 100mA PDF

    Contextual Info: CY62157ESL MoBL 8-Mbit 512K x 16 Static RAM Features • Very high speed: 45 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical Standby current: 2 A ❐ Maximum Standby current: 8 A ■ Ultra low active power


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    CY62157ESL I/O15) PDF

    Contextual Info: R1LV0816ABG -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0393-0100 Rev.1.00 2009.12.08 Description The R1LV0816ABG is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.


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    R1LV0816ABG 16bit) REJ03C0393-0100 288-words 16-bit, 48balls PDF

    Contextual Info: R1LV0816ABG -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0393-0100 Rev.1.00 2009.12.08 Description The R1LV0816ABG is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.


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    R1LV0816ABG 16bit) REJ03C0393-0100 288-words 16-bit, 48balls PDF

    R1LV0816ASB

    Abstract: R1LV0816ASB-5SI R1LV0816A R1LV0816ASB-7SI
    Contextual Info: R1LV0816ASB – 5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0387-0100 Rev.1.00 2009.12.07 Description The R1LV0816ASB is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.


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    R1LV0816ASB 16bit) REJ03C0387-0100 R1LV0816ASB 288-words 16-bit, 44pin 44-pin R1LV0816ASB-5SI R1LV0816A R1LV0816ASB-7SI PDF

    Contextual Info: R1LV0816ASB – 5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0387-0100 Rev.1.00 2009.12.07 Description The R1LV0816ASB is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.


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    R1LV0816ASB 16bit) REJ03C0387-0100 R1LV0816ASB 288-words 16-bit, 44pin 44-pin PDF

    R1LV0816ASB-5SI

    Abstract: R1LV0816A
    Contextual Info: R1LV0816ASB – 5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0387-0100 Rev.1.00 2009.12.07 Description The R1LV0816ASB is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.


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    R1LV0816ASB 16bit) REJ03C0387-0100 R1LV0816ASB 288-words 16-bit, 44pin 44-pin R1LV0816ASB-5SI R1LV0816A PDF

    Contextual Info: SCAN16512 October 21, 2011 Low Voltage Universal 16-bit IEEE 1149.1 Bus Transceiver with TRI-STATE Outputs General Description Features The SCAN16512 is a high speed, low-power universal bus transceiver featuring data inputs organized into two 8-bit bytes with output enable and latch enable control signals. This


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    SCAN16512 16-bit SCAN16512 PDF

    LTC2635-LMO

    Abstract: LTC2635-L LTC2635H LM08 LTC2635 LTC2635-12 LTC2635C LTC2635-H LTC2635-LMI12 LTC2635-LMI10
    Contextual Info: LTC2635 Quad 12-/10-/8-Bit I2C VOUT DACs with 10ppm/°C Reference FEATURES DESCRIPTION n The LTC 2635 is a family of quad 12-, 10-, and 8-bit voltage-output DACs with an integrated, high-accuracy, low-drift reference in a 16-pin QFN or a 10-lead MSOP package. It has rail-to-rail output buffers and is guaranteed monotonic. The LTC2635-L has a full-scale output


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    LTC2635 12-/10-/8-Bit 10ppm/ 16-pin 10-lead LTC2635-L LTC2635-H LTC2635-L/ LTC2635-LMO LTC2635H LM08 LTC2635 LTC2635-12 LTC2635C LTC2635-LMI12 LTC2635-LMI10 PDF

    Contextual Info: ST72325 8-bit MCU with 16 to 60K Flash/ROM, ADC, CSS, 5 timers, SPI, SCI, I2C interface Features • ■ ■ ■ ■ Memories – 16K to 60K dual voltage High Density Flash HDFlash or up to 32K ROM with read-out protection capability. In-Application Programming and In-Circuit Programming for HDFlash


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    ST72325 ST72F325K6T3 ST72325K6 ST72325 \TEMP\SGST\ST72F325K6T3 21-Aug-2007 PDF

    bldc sensorless 12v brushless motor driver

    Abstract: ic1 ne555 PIR SENSOR stabilization dali source code DELTA dvp smd code marking NEC LQFP32 LQFP44 LQFP48 LQFP64
    Contextual Info: ST72325 8-bit MCU with 16 to 60K Flash/ROM, ADC, CSS, 5 timers, SPI, SCI, I2C interface Features • ■ ■ ■ ■ Memories – 16K to 60K dual voltage High Density Flash HDFlash or up to 32K ROM with read-out protection capability. In-Application Programming and In-Circuit Programming for HDFlash


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    ST72325 bldc sensorless 12v brushless motor driver ic1 ne555 PIR SENSOR stabilization dali source code DELTA dvp smd code marking NEC LQFP32 LQFP44 LQFP48 LQFP64 PDF

    200khz ultrasonic transducers

    Abstract: High Output Current Amplifiers qxga ca3140 equivalents EL1510 MAKING LD MV SOT23 EL5104 CA3240 86 sot23-8
    Contextual Info: Intersil High Speed Op Amps The Evolution of Analog Discover Intersil’s Wide Portfolio of High Speed Op Amps Wide Supply Voltage Range Amplifiers P. 2 Low Noise, Low Distortion Amplifiers Slew Enhanced VFAs P. 3 High Accuracy Amplifiers P. 4 Differential Line Drivers


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    EL1526 EL1527 1-888-INTERSIL LC-026 200khz ultrasonic transducers High Output Current Amplifiers qxga ca3140 equivalents EL1510 MAKING LD MV SOT23 EL5104 CA3240 86 sot23-8 PDF

    ADC Key 1 603 rs232

    Abstract: ISL26104 isl26102 ISL3152 ADS1232 use for weighing ads1232 weigh scale schematic PR40-Precision-SOI schematic diagram PWM solar charger solar usb charger schematic ECG sensor
    Contextual Info: INTERSIL SELECTION GUIDE SIGNAL PATH Real Time Clocks Switches/Multiplexers Interface Digital Potentiometers Data Converters High Speed Op Amps Precision Op Amps Precision Instrumentation Amplifiers Precision Voltage References Power Management  Q3/Q4 2012


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    1-888-INTERSIL D-85737 LC-096 ADC Key 1 603 rs232 ISL26104 isl26102 ISL3152 ADS1232 use for weighing ads1232 weigh scale schematic PR40-Precision-SOI schematic diagram PWM solar charger solar usb charger schematic ECG sensor PDF

    Contextual Info: TS982 Wide bandwidth, dual bipolar operational amplifier Datasheet - production data Description The TS982 device is a dual operational amplifier able to drive 200 mA down to voltages as low as 2.7 V. The SO-8 exposed-pad package allows high current output at high ambient temperatures


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    TS982 TS982 DocID009557 PDF