HIGH TEMPERATURE REVERSE BIAS IGBT INTERNATIONAL RECTIFIER Search Results

Contextual Info: IRAM630-1562F Intelligent Power Module for Energy Efficient Compressor Applications 15A, 600V IPM with Integrated PFC and Open Emitter Pins Description International Rectifier's IRAM630-1562F is a 15A, 600V PFC+Inverter Intelligent Power Module IPM with

Contextual Info: IRAM256-2067A Series 20A, 600V Integrated Power Module for Appliance Motor Drive Applications Description International Rectifier's IRAM256-2067A is a 20A, 600V Integrated Power Hybrid IC with Open Emitter pins for advanced Appliance Motor Drives applications such as energy efficient Air Conditioner and Washing Machine.

Contextual Info: IRAM256-1567A Series 15A, 600V Integrated Power Module for Appliance Motor Drive Applications Description International Rectifier's IRAM256-1567A is a 15A, 600V Integrated Power Hybrid IC with Open Emitter pins for advanced Appliance Motor Drives applications such as energy efficient Air Conditioner and Washing Machine.

schematic diagram inverter air conditioner

Contextual Info: IRAM256-1067A Series 10A, 600V Integrated Power Module for Appliance Motor Drive Applications Description International Rectifier's IRAM256-1067A is a 10A, 600V Integrated Power Hybrid IC with Open Emitter pins for advanced Appliance Motor Drives applications such as energy efficient Air Conditioner and Washing Machine.

Contextual Info: IRAM256-1567A Series 15A, 600V Integrated Power Module for Appliance Motor Drive Applications Description International Rectifier's IRAM256-1567A is a 15A, 600V Integrated Power Hybrid IC with Open Emitter pins for advanced Appliance Motor Drives applications such as energy efficient Air Conditioner and Washing Machine.

ci ir2110

Abstract: IR igbt gate driver ic dc control using ir2110 and mosfet 47N IGBT h bridge ir2110 IG8T IR2110 10DF6 IR211 IRGPC50F
Contextual Info: International Hü] Rectifier D e sig n T ips DT 92-3B INTERNATIONAL RECTIFIER • APPLICATIONS ENG. • 233 KANSAS ST. • ELSEGUNDO, CA. 90245 • TEL 310 322-3331 • FAX (310)322-3332 USING STANDARD CONTROL IC'S TO GENERATE NEGATIVE GATE BIAS FOR MOSFETS AND IGBTS

INT-944

Abstract: AN983 INT990 IRF 949 C50U IRGPC50U IRGBC40U P channel 600v 20a IGBT sec irf840 AN-983
Contextual Info: Index AN-983 v.Int IGBT Characteristics (HEXFET is a trademark of International Rectifier) Topics covered: How the IGBT complements the MOSFET Silicon structure and equivalent circuit Conduction characteristics and “switchback” Switching characteristics

INT-944

Abstract: Equivalent transistors for IRGPC50U IRF 949 AN983 all transistor IRF 310 INT-990 irgbc20u Similar 7A, 100v fast recovery diode LOW FORWARD VOLTAGE DROP DIODE RECTIFIER mosfet 10a 600v
Contextual Info: AN-983 v.Int IGBT Characteristics (HEXFET is a trademark of International Rectifier) Topics covered: How the IGBT complements the MOSFET Silicon structure and equivalent circuit Conduction characteristics and “switchback” Switching characteristics

IQR 336

Abstract: 5056B IOR 336
Contextual Info: International IQR Rectifier "HALF-BRIDGE" IGBT INT-A-PAK PD - 5.056B GA150TS60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology VcES = 600V • UltraFast: Optimized for high operating frequencies 8-40kHz in hard switching, >200kHz in resonant mode

100TS60U

Abstract: 74c74 ETS-D
Contextual Info: International IO R Rectifier "HALF-BRIDGE" IGBT INT-A-PAK PD - 5.055A GA100TS60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology VcES= 600V • UltraFast: Optimized for high operating frequencies 8-40kHz in hard switching, >200kHz in resonant mode

18672

Abstract: 100TS120U
Contextual Info: International IOSR Rectifier PD - 5.060A GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40kHz in hard switching, >200kHz in resonant mode

IRAMX20UP60B

Abstract: IR21365 DT97-3 VSS232 IRAMX20UP60A E252584
Contextual Info: PD-96956 Rev D Integrated Power Hybrid IC for Appliance Motor Drive Applications IRAMX20UP60A Series 20A, 600V with open Emitter Pins Description International Rectifier's IRAMX20UP60A is a 20A, 600V Integrated Power Hybrid IC for Appliance Motor Drives applications such air conditioning systems and compressor drivers as well as in light industrial application. IR's technology offers an extremely compact, high performance AC motor-driver in a single isolated

Contextual Info: International TOR Rectifier PD -5.048 PRELIMINARY "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK GA500TD60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V ces - 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

ga200ts60u

Contextual Info: International USSR Rectifier p re lim in a ry "HALF-BRIDGE" IGBT INT-A-PAK PD'5058 G A 200TS60U Ultra-Fast Speed IGBT Features V qes = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

lm 8446

Abstract: CN400
Contextual Info: International IQ R Rectifier h«umina«y "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK P0‘5057' G A 300TD 60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

pj 69 diode

Abstract: shottky barrier diode 100V 100A diode pj sic igbt 1000V 400 A failure analysis IGBT sic diode diode schottky 600v Cree SiC diode die 300C 600C
Contextual Info: Characterisation of 4H-SiC Schottky Diodes for IGBT Applications C. M. Johnson*, M. Rahimo*, N. G. Wright*, D. A. Hinchley*, A. B. Horsfall*, D. J. Morrison*, A. Knights* *Department of Electrical and Electronic Engineering University of Newcastle Newcastle-upon-Tyne NE1 7RU

irf p 1806

Contextual Info: International Rectifier IÖR PD - 5.059B PRELIMINARY "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK GA400TD60U Ultra-Fast Speed IGBT Featu res V ces = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

Contextual Info: International IO R Rectifier PD - 5.060 PRELIMINARY G A 100T S 1 2 0 U Ultra-Fast Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK Features V q e s — 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

ga250ts60u

Contextual Info: International IOR Rectifier PD -5.047 PRELIMINARY "HALF-BRIDGE" IGBTINT-A-PAK GA250TS60U Ultra-Fast Speed IGBT Features Vces = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

Contextual Info: International IQ R Rectifier PD - 5.060A GA100TS120U PRELIMINARY Ultra-Fast Speed IGBT "HALF-BRIDGE” IGBT INT-A-PAK Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

PD-94684

Abstract: IR21365 IRAMX16UP60A DT97
Contextual Info: PD-94684 RevB Plug N DriveTM Integrated Power Module for Appliance Motor Drive IRAMX16UP60A Series 16A, 600V Description International Rectifier's IRAMX16UP60A is an Integrated Power Module developed and optimized for electronic motor control in appliance applications such as washing machines and variable speed compressor drives for inroom air-conditioning systems and commercial refrigerators. Plug N Drive technology offers an extremely compact, high performance AC motor-driver in a single isolated package for a very simple design.

IRF 860

Abstract: 5056B IRF 150a
Contextual Info: , I ,• In ternational I I«R Rectifier PD -5.056B preliminary "HALF-BRIDGE" IGBT INT-A-PAK G A 150TS6 0 U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V ces = 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

IGBT Designers Manual

Abstract: dc control using ir2110 and mosfet IR2110 application note igbt series bridge ir2110 ir2110 application DATA SHEET OF IGBT IR2110 IR2110 maximum frequency MOSFET designer manual
Contextual Info: Design Tips DT 92-3B Using Standard Control ICs to Generate Negative Gate Bias for MOSFETs & IGBTs Introduction Dynamic Operation Inherently neither the MOSFET nor the IGBT requires negative bias on the gate. Setting the gate voltage to zero at turn-off insures proper

LC 7880

Contextual Info: International IG R Rectifier P D -5.050 PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA75TS60U Ultra-Fast Speed IGBT Features VcES = 600V • Generation 4 IG B T technology • Ultra Fast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200