HIGH SPEED IR SENSOR DIODE Search Results

REFLECTIVE OBJECT SENSOR

Abstract: ir sensor for object detection using led ir sensor 0038 OBJECT SENSOR OPB609 OPB609AX OPB609GU OPB609RA OP508 LED 020 ir sensor
Contextual Info: Reflective Object Sensor OPB609 Series Features: • • • • OP609 emitter 940 nm IR-LED Unfocused for sensing diffuse surface Low-cost plastic housing High-speed phototransistor output Description: The OPB609 consists of an 940 nm, Light Emitting Diode (LED) and an NPN silicon Phototransistor, which are

ir sensor for object detection using led

Abstract: vibra tite OPB609AX REFLECTIVE OBJECT SENSOR OPB609 OPB609GU OPB609RA reflective sensor 4 pin
Contextual Info: Reflective Object Sensor OPB609 Series Features: • • • • RA OPB609 emitter 940 nm IR-LED Unfocused for sensing diffuse surface Low-cost plastic housing High-speed phototransistor output GU AX Description: The OPB609 consists of an 940 nm, Light Emitting Diode (LED) and an NPN silicon Phototransistor, which are

ir sensor 0038

Abstract: LED 020 ir sensor OBJECT SENSOR ir sensor for object detection using led REFLECTIVE OBJECT SENSOR reflective sensor 4 pin OPB609GU
Contextual Info: Reflective Object Sensor OPB609 Series Features: x x x x RA OP609 emitter 940 nm IR-LED Unfocused for sensing diffuse surface Low-cost plastic housing High-speed phototransistor output GU AX Description: The OPB609 consists of an 940 nm, Light Emitting Diode (LED) and an NPN silicon Phototransistor, which are

ir sensor 0038

Contextual Info: Reflective Object Sensor OPB609 Series Features: x x x x RA OP609 emitter 940 nm IR-LED Unfocused for sensing diffuse surface Low-cost plastic housing High-speed phototransistor output GU AX Description: The OPB609 consists of an 940 nm, Light Emitting Diode (LED) and an NPN silicon Phototransistor, which are

LZ2314J

Abstract: 10X10 sharp CCD Image Sensor
Contextual Info: SHARP LZ2314J LZ2314J 1/3 type B/W CCD Area Sensor for EIA DESCRIPTION PIN CONNECTIONS LZ2314J is a 1/3-type 6.0 mm solid-state image sensor that consists of PN phote-diodes and CCDs (charge-coupled devices). Having approxi­ mately 270 000 pixels (horizontal 542 x vertical

SEG NC3

Abstract: LZ2414J LJ sharp Sharp LJ
Contextual Info: LZ2414J SHARP 1/4 type B/W CCD Area Sensor for EIA DESCRIPTION PIN CONNECTIONS LZ2414J is a 1/4-type 4.5 mm solid-state image sensor that consists of PN phote-diodes and CCDs (charge-coupled devices). Having approxi­ mately 270 000 pixels (horizontal 542 x vertical

LZ2324J

Contextual Info: SHARP LZ2324J 1 /3 type B/W CCD Area Sensor for CCIR DESCRIPTION PIN CONNECTIONS LZ2324J is a 1/3-type 6.0 mm solid-state image sensor that consists of PN phote-diodes and CCDs (charge-coupled devices). Having approxi­ mately 320 000 pixels (horizontal 542 x vertical

schematic photo sensor

Abstract: photo 3-pin IR sensor 3-pin IR sensor PC105 high speed ir sensor diode uv sensor UV diode 250 nm Pacific Silicon Sensor
Contextual Info: First Sensor PIN Photo Diode Data Sheet Part Description PC10-5b TO Order # 501426 Version 21-12-11 Features Description Application RoHS • Ø 3.6 mm active area • Low dark current • Fast response time • High speed epitaxy • Fully depleted at 3.5 V

Contextual Info: SHARP LZ2353A 1/3 type Color CCD Area Sensor for NTSC DESCRIPTION PIN CONNECTIONS LZ2353A is a 1 /3-type 6.0 mm solid-state image sensor that consists of PN phote-diodes and CCDs (charge-coupled devices). Having approximately 410 000 pixels (horizontal 811 x vertical 507), the

h1b transistor

Abstract: trasistor sharp ir sensor IR TRANSISTOR
Contextual Info: SHARR LZ2346 LZ2346 Two-power supply + 5 V and + 12 V operation CCIR 1 /3 type B /W CCD Area Sensor for CCIR PIN CONNECTIONS DESCRIPTION LZ2346 is 1/3 -ty p e (6.0 mm) solid-state image sensor that consists of PN phote-diodes and CCDs (charge-coupled devices) driven by only

LZ2354J

Abstract: sharp CCD Image Sensor
Contextual Info: SHARP LZ2354J LZ2354J 1/3 type B/W CCD Area Sensor for EIA PIN CONNECTIONS DESCRIPTION CCD AREA SENSORs LZ2354J is a 1/3-type 6.0 mm solid-state image sensor that consists of PN phote-diodes and CCDs (charge-coupled devices). Having approxi­ mately 410 000 pixels (horizontal 811 xve rtica l

Contextual Info: SHARP LZ23242J 1 /3 type B/W CCD Area Sensor for CCIR DESCRIPTION LZ23242J is a 1/3-type 6.0 mm solid state image sensor that consists of PN phote-diodes and CCDs (charge-coupled devices). Having approxi­ mately 320 000 pixels (horizontal 542 x vertical

Contextual Info: SHARP LZ2363 LZ2363 1/3 type Color CCD Area Sensor for PAL sensor that consists of PN phote-diodes and CCDs charge-coupled devices . Having approxi­ mately 4 7 0 000 pixels (horizontal 795 x vertical 595), the sensor provides a high resolution stable color image.

U601

Contextual Info: SHARP LZ2313H5 1 /3 type Color CCD Area Sensor for NTSC DESCRIPTION PIN CONNECTIONS LZ2313H5 is a 1/3 -ty p e 6.0 mm solid-state im age sensor that consists of PN phote-diodes and CCDs (charge-coupled devices). Having approxi­ mately 270 000 pixels (horizontal 542 x vertical

Contextual Info: LZ2336 SHARP Two-power supply + 5 V and + 1 2 V operation 1 / 3 type B /W CCD A rea Sensor for EIA DESCRIPTION PIN CONNECTIONS CCD AREA SENSORs LZ2336 is a 1 /3-type (6.0 mm) solid-state image sensor that consists of PN phote-diodes and CCDs (charge-coupled devices) driven by only

PAN3601DH

Abstract: trf7903 paw3601 pan3601 paw3601dh-nf mouse chip PAW3601dh PAW optical mouse TRF7903-PW20 CY7C63813-PXC
Contextual Info: PAW3601DH-NF BUNDLES DATASHEET PAW3601DH-NF Bundles Datasheet introduction z The PAW3601DH-NF sensor along with the PNLR-00038 lens and PNDR-00004 laser diode form a complete and compact laser mouse tracking system. z High speed motion detection up to 28 inches/sec and acceleration can be up to 20g.

Sharp amplifier SM 30

Contextual Info: LZ2363 SHARP LZ2363 1 /3 type Color CCD Area Sensor for PAL DESCRIPTION PIN CONNECTIONS CCD AREA SENSORs LZ2363 is a 1/3-typ e 6.0 mm solid-state image sensor that consists of PN phote-diodes and CCDs (charge-coupled devices). Having approxi­ mately 470 000 pixels (horizontal 795 x vertical

Contextual Info: Mid-IR Products Introduction Mid-Infrared Light Emitting Diodes and Photodiodes Light emitting diodes LEDs and Photodiodes (PDs) are semiconductor devices. LED or PD heterostructure is formed by sequential epitaxy of semiconductor layers on the surface of a crystal

74HCTxx

Abstract: RT9000 dark detector application ,uses and working CAT 1527654 TCRT9000 TCRT5000 sensor circuit coil gold detector circuit diagram circuit diagram for simple IR transmitter using u report on infrared object counter D Type 37 way
Contextual Info: Temic Semiconductors. Application of Optoelectronic Reflex Sensors TCRT1000, TCRT5000, TCRT9000, CNY70 TEMIC optoelectronic sensors contain infrared-emitting diodes as a radiation source and phototransistors as detectors. 'typical applications include: •

TCRT5000

Abstract: dark detector application ,uses and working DC motor speed control using IC 555 and ir sensor coil gold detector circuit diagram sensor cny70 CNY70 BC178B 74HCTXX angular position sensor DC motor speed control using 555 and ir sensor
Contextual Info: Vishay Telefunken Application of Optical Reflex Sensors TCRT1000, TCRT5000, CNY70 Vishay Telefunken optoelectronic sensors contain infrared-emitting diodes as a radiation source and phototransistors as detectors. Typical applications include: D Copying machines

dark detector application ,uses and working

Abstract: coil gold detector circuit diagram sensor cny70 CNY70 74HCTXX BC108B transistor specification TCRT5000 Reflective Optical Sensor TCRT1000 CIRCUIT DIAGRAM for SPEED DETECTOR USING 555 TIMER IC LIGHT DEPENDENT RESISTOR sensor
Contextual Info: Vishay Semiconductors Application of Optical Reflex Sensors TCRT1000, TCRT5000, CNY70 Vishay Semiconductor optoelectronic sensors contain infrared-emitting diodes as a radiation source and phototransistors as detectors. Typical applications include: D Copying machines

pin diagram of lt 542

Contextual Info: SHARP LZ2324AK LZ2324AK 1/3 type B/W CCD Area Sensor for CCIR PIN CONNECTIONS DESCRIPTION LZ2324AK is a 1/3-type 6.0 mm solid-state image sensor that consists of PN phote-diodes and CCDs (charge-coupled devices). Having approximatelyO00Opixels (horizontal 542 x ve rtica l

OP300

Abstract: OP600 OP640 OP224
Contextual Info: High Speed, High Power, Hermetic Infrared Emitting Diode OP224K Features: • • • • • Hermetically sealed package Mechanically and spectrally matched to other OPTEK devices Designed for direct mount to PCBoard High Modulation Bandwidth High Irradiance Power

h1b transistor

Abstract: LZ23362
Contextual Info: SHARP LZ23362 LZ23362 Two-power supply + 5 V and + 1 2 V operation 1 /3 type B /W CCD Area Sensor for EIA DESCRIPTION PIN CONNECTIONS CCD AREA SENSORs LZ23362 is a 1/3-type (6.0 mm) solid-state image sensor that consists of PN phote-diodes and CCDs (charge-coupled devices) driven by only