HIGH POWER SPDT 1.24 Search Results

Contextual Info: May 2, 2008 High Power Ka-Band Absorptive SPDT Switch TGS4304 Key Features and Performance • • • • • • • • Primary Applications Description • • • The TriQuint TGS4304 is a GaAs absorptive single-pole, double-throw SPDT PIN monolithic switch designed

TGS4304

Contextual Info: May 2, 2008 High Power Ka-Band Absorptive SPDT Switch TGS4304 Key Features and Performance • • • • • • • • Primary Applications Description • • • The TriQuint TGS4304 is a GaAs absorptive single-pole, double-throw SPDT PIN monolithic switch designed

AS338

Abstract: 50/AS338-12
Contextual Info: GaAs 1C SPDT Switch Non-Reflective DC-2.5 GHz ESAlpha AS338-12 Features SOIC-8 • Low DC Power Consumption PIN I 0.050 1.27 mm BSC M ■ High Isolation (40 dB @ 0.9 GHz) ■ Non-Reflective 0.244 (6.20 mm) 0.228 (5.80 mm] PIN 1 INDICATOR - Description The AS338-12 is a low cost IC FET SPDT non-reflective

Contextual Info: GaAs IC SPDT Switch Non-Reflective DC–2.5 GHz AS338-12 Features SOIC-8 • Low DC Power Consumption PIN 8 0.050 1.27 mm BSC ■ High Isolation (40 dB @ 0.9 GHz) ■ Non-Reflective 0.244 (6.20 mm) 0.228 (5.80 mm) PIN 1 INDICATOR Description The AS338-12 is a low cost IC FET SPDT non-reflective

AS338-12

Contextual Info: GaAs IC SPDT Switch Non-Reflective DC–2.5 GHz AS338-12 Features SOIC-8 • Low DC Power Consumption PIN 8 0.050 1.27 mm BSC ■ High Isolation (40 dB @ 0.9 GHz) ■ Non-Reflective 0.244 (6.20 mm) 0.228 (5.80 mm) PIN 1 INDICATOR Description The AS338-12 is a low cost IC FET SPDT non-reflective

Contextual Info: GaAs 1C SPDT Switch Non-Reflective DC-2.5 GHz EHAlpha AS338-12 Features SOIC-8 • Low DC Power Consumption PIN 8 *— 0.050 1 27 mm BSC \ R If ■ High Isolation (40 dB @ 0.9 GHz) ■ Non-Reflective PIN 1 INDICATOR - Description The AS338-12 is a low cost 1C FET SPDT non-reflective

AS338-12

Abstract: 50/AS338-12
Contextual Info: GaAs IC SPDT Switch Non-Reflective DC–2.5 GHz AS338-12 Features SOIC-8 • Low DC Power Consumption PIN 8 0.050 1.27 mm BSC ■ High Isolation (40 dB @ 0.9 GHz) ■ Non-Reflective 0.244 (6.20 mm) 0.228 (5.80 mm) PIN 1 INDICATOR Description The AS338-12 is a low cost IC FET SPDT non-reflective

AS137-12

Contextual Info: GaAs IC High Power SPDT Switch Positive Control DC–2.5 GHz AS137-12 Features • High Linearity IP3 55 dBm @ 0.9 GHz SOIC-8 PIN 8 0.050 (1.27 mm) BSC ■ Low Insertion Loss (0.5 dB @ 0.9 GHz) ■ Low DC Power Consumption 0.244 (6.20 mm) 0.228 (5.80 mm)

AS002M2-12

Contextual Info: GaAs IC SPDT Switch Non-Reflective DC–2.5 GHz AS002M2-12 Features SOIC-8 • Low DC Power Consumption PIN 8 0.050 1.27 mm BSC ■ Non-Reflective ■ High Isolation (40 dB @ 1 GHz) 0.244 (6.20 mm) 0.228 (5.80 mm) PIN 1 INDICATOR Description The AS002M2-12 is a low cost IC FET SPDT nonreflective switch in a plastic SOIC-8 package. The switch

Contextual Info: GaAs IC SPDT Switch Non-Reflective DC–2.5 GHz AS002M2-12 Features SOIC-8 • Low DC Power Consumption PIN 8 0.050 1.27 mm BSC ■ Non-Reflective ■ High Isolation (40 dB @ 1 GHz) 0.244 (6.20 mm) 0.228 (5.80 mm) PIN 1 INDICATOR Description The AS002M2-12 is a low cost IC FET SPDT nonreflective switch in a plastic SOIC-8 package. The switch

AS279-12

Contextual Info: GaAs IC High Power SPDT Switch DC–2.0 GHz AS279-12 Features SOIC-8 • High Linearity 55 dBm IP3 @ 0.9 GHz PIN 8 0.050 (1.27 mm) BSC ■ Low Insertion Loss (0.4 dB @ 0.9 GHz) ■ Low DC Power Consumption 0.244 (6.20 mm) 0.228 (5.80 mm) PIN 1 INDICATOR

AS279-12

Abstract: AS2791
Contextual Info: GaAs IC High Power SPDT Switch DC–2 GHz AS279-12 Features • High Linearity 55 dBm IP3 @ 0.9 GHz SOIC-8 PIN 8 0.050 (1.27 mm) BSC ■ Low Insertion Loss (0.4 dB @ 0.9 GHz) ■ Low DC Power Consumption 0.244 (6.20 mm) 0.228 (5.80 mm) PIN 1 INDICATOR Description

AS144-12

Contextual Info: GaAs IC High Power SPDT Switch DC–2 GHz AS144-12 Features • High Linearity +61 dBm IP3 @ 0.9 GHz SOIC-8 PIN 8 0.050 (1.27 mm) BSC ■ Low Insertion Loss (0.4 dB @ 0.9 GHz) ■ Low DC Power Consumption 0.244 (6.20 mm) 0.228 (5.80 mm) PIN 1 INDICATOR Description

Contextual Info: GaAs 1C High Power SPDT Switch DC-2.0 GHz EBAlpha AS144-12 Features SOIC-8 • High Linearity +61 dBm IP3 @ 0.9 GHz PIN 8 • 0.050 (1.27 mm) BSC ■ Low Insertion Loss (0.4 dB @ 0.9 GHz) ■ Low DC Power Consumption PIN 1 INDICATOR • 0.244 (6,20 mm) 0.228 (5.80 mm)

MSP2T-18XL

Abstract: BC 458 transistor BC 458 M124885
Contextual Info: Xtra Long Life SPDT Switch 50Ω MSP2T-18XL DC to 18 GHz Features Maximum Ratings Operating Temperature -15°C to +45°C Storage Temperature -15°C to +45°C RF Power any single port • low insertion loss, 0.25 dB typ. • high isolation, 85 dB typ. • high power handling, 10W

CY353

Abstract: M121747 ZASW-2-50DR
Contextual Info: Coaxial High Isolation Switch 50W SPDT, TTL Driver, Reflective Maximum Ratings Input Power DC to 5000 MHz Features Operating Temperature Storage Temperature ZASW-2-50DR+ • wideband, DC to 5 GHz • integral TTL driver • high isolation, 82 dB typ. at 2 GHz

Contextual Info: NE W! Ultra-Reliable SPDT Switch MSP2T-18 DC to 18 GHz Features • • • • • • low insertion loss, 0.2 dB high isolation, 70 dB high power handling, 25W 15 million cycles typical break-before-make configuration reflective failsafe switch Applications

Contextual Info: NE W! 15 Million cycles SPDT Switch MSP2T-18 DC to 18 GHz Features • • • • • • • low insertion loss, 0.2 dB high isolation, 70 dB high power handling, 25W ultra reliable break-before-make configuration reflective failsafe switch patent pending

FK811

Contextual Info: NE W! 15 Million cycles SPDT Switch MSP2T-18 DC to 18 GHz Features • • • • • • • low insertion loss, 0.2 dB high isolation, 70 dB high power handling, 25W ultra reliable break-before-make configuration reflective failsafe switch patent pending

Contextual Info: Coaxial High Isolation Switch 50W SPDT, TTL Driver, Reflective Maximum Ratings Operating Temperature Storage Temperature Input Power • wideband, DC to 5 GHz • integral TTL driver • high isolation, 82 dB typ. at 2 GHz -55°C to 150°C see Table & Note 2

Contextual Info: GaAs 1C High Power SPDT Switch DC-2.0 GHz EBAlpha AS279-12 Features SOIC-8 • High Linearity 55 dBm IP3 @ 0.9 GHz «— \ n i !■ ■ Low Insertion Loss (0.4 dB @ 0.9 GHz) ■ Low DC Power Consumption PIN 1 INDICATOR - uo ■'“ i l jL-y Description 1

Contextual Info: NE W! Ultra-Reliable SPDT Switch MSP2T-18 DC to 18 GHz Features • • • • • • low insertion loss, 0.2 dB high isolation, 70 dB high power handling, 25W 15 million cycles typical break-before-make configuration reflective failsafe switch Applications

CY353

Abstract: M121747 ZASW-2-50DR
Contextual Info: Coaxial High Isolation Switch 50W SPDT, TTL Driver, Reflective Maximum Ratings Input Power DC to 5000 MHz Features Operating Temperature Storage Temperature ZASW-2-50DR+ • wideband, DC to 5 GHz • integral TTL driver • high isolation, 82 dB typ. at 2 GHz

MSP2T-18XL

Abstract: f 9582 dc transistor BC 458 M124885
Contextual Info: Xtra Long Life SPDT Switch 50W MSP2T-18XL DC to 18 GHz Features Maximum Ratings Operating Temperature -15°C to +45°C Storage Temperature -15°C to +45°C RF Power any single port • low insertion loss, 0.25 dB typ. • high isolation, 85 dB typ. • high power handling, 10W