HIGH POWER IR EMITTER Search Results
HIGH POWER IR EMITTER Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 11C90DM |
|
11C90 - Prescaler, ECL Series |
|
||
| 100324/VYA |
|
100324 - TTL to ECL Translator, 6 Func, Complementary Output, ECL - Dual marked (5962-9153001VYA) |
|
||
| ICL8211MTY/883B |
|
Programmmable High Accuracy Voltage Detecor |
|
||
| UDS2983R/B |
|
UDS2983 - High Voltage, High Current Source Driver |
|
||
| UDS2981R/B |
|
UDS2981 - High Voltage, High Current Source Driver |
|
HIGH POWER IR EMITTER Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
720-SFH4253-Z
Abstract: 4253-Z
|
Original |
720-SFH4253-Z 4253-Z 4253-Z | |
OD-800F
Abstract: OD-800L OD-800W od800w
|
Original |
OD-800W MIL-S-19500 100Hz OD-800F OD-800L OD-800W od800w | |
OD-870F
Abstract: OD-870L OD-870W
|
Original |
OD-870W 780nm -870nm 100mA 100Hz OD-870F OD-870L OD-870W | |
ODD-45W
Abstract: OD-148-C OD-148W OD-24F OD-880 OD-880E OD-880F OD-880F1 OD-880L OD-880W
|
Original |
OD-880W 880nm ODD-45W 100Hz OD-148-C OD-148W OD-24F OD-880 OD-880E OD-880F OD-880F1 OD-880L OD-880W | |
OD-880Contextual Info: HIGH-POWER GaAlAs IR EMITTERS OD-880 FEATURES EPOXY DOME ANODE CASE .125 MAX • Very high power output .209 .212 .042 .046 .017 • Wide angle of emission • High reliability liquid-phase epitaxially grown GaAlAs • TO-46 Header .164 .167 .100 .041 All metal surfaces are gold plated. Dimensions are |
Original |
OD-880 100mA 100Hz OD-880 | |
OD-50L
Abstract: OD-100 OD-50W OD50L 357 opto opto 357
|
Original |
OD-50L 500mA 100Hz OD-50L OD-100 OD-50W OD50L 357 opto opto 357 | |
|
Contextual Info: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4250 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Infrarot LED mit sehr hoher Ausgangsleistung |
Original |
||
|
Contextual Info: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4257 Wesentliche Merkmale Features • Infrarot LED mit hoher Ausgangsleistung • Schwarz eingefärbtes TOPLED-Gehäuse |
Original |
720-SFH4257-Z 4257-Z | |
OD-880FJ
Abstract: OD-880LJ OD-880WJ IR-LEDs
|
Original |
OD-880WJ 880nm MIL-S-19500 100mA 100Hz OD-880FJ OD-880LJ OD-880WJ IR-LEDs | |
OD-880WJContextual Info: HI-REL GaAlAs IR EMITTERS OD-880WJ FEATURES 1.00 MIN. ANODE CASE GLASS .006 HIGH MAX .015 • High reliability LPE GaAlAs IRLEDs .209 .212 • High power output • 880nm peak emission • Hermetically sealed TO-46 package .183 .152 .187 .156 .100 • MIL-S-19500 screening available |
Original |
OD-880WJ 880nm MIL-S-19500 100mA 100Hz OD-880WJ | |
OD-880EContextual Info: HIGH-POWER GaAlAs IR EMITTERS OD-880E FEATURES EPOXY DOME ANODE CASE .145 MAX • High reliability liquid-phase epitaxially grown GaAlAs .209 .212 .080 • 880nm peak emission .017 • High uniform output • TO-46 Header .178 .195 .100 .041 All dimensions are nominal in inches unless otherwise |
Original |
OD-880E 880nm 100mA 100Hz OD-880E | |
OD-24F
Abstract: ODD-45W
|
Original |
OD-24F 880nm ODD-45W 200mA 100Hz OD-24F | |
|
Contextual Info: C ra lp Ü J © ir VERY HIGH VOLTAGE, HIGH CURRENT o n tr a n Devices. Inc. CHIP NUM BER IMPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR * CONTACT METALLIZATION Base and emitter: > 50.000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available) |
OCR Scan |
52ram) SDT55456, SDT55472, STD55960. SDT55560 | |
|
Contextual Info: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4252 Nicht für Neuentwicklungen / Not for new designs Wesentliche Merkmale Features • Infrarot LED mit sehr hoher Ausgangsleistung |
Original |
720-SFH4252Z 4252-Z | |
|
|
|||
tp 4056Contextual Info: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4056 Wesentliche Merkmale Features • Sehr kleines Gehäuse: (LxBxH) 3.2 mm x 1.6mm x 1 mm • Sehr hohe Gesamtleistung |
Original |
||
|
Contextual Info: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4059 Wesentliche Merkmale Features • Sehr kleines Gehäuse: (LxBxH) 3.2 mm x 1.6mm x 1.85 mm • Sehr hohe Gesamtleistung |
Original |
||
|
Contextual Info: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4258S SFH 4259S Wesentliche Merkmale Features • • • • Infrarot LED mit hoher Ausgangsleistung Halbwinkel SFH 4258S: ± 15° |
Original |
4258S 4259S 4258S: 4259S: | |
PDI-E805Contextual Info: GaAlAs High Power IR LED Emitters PDI-E805 Advanced Photonix, Inc. CL 0.145 [3.68] PACKAGE DIMENSIONS INCH [mm] 45° 0.040 [1.02] 1.00 [25.4] MIN CL 0.222 [5.64] Ø0.019 [0.48] Ø0.016 [0.41] CL 0.100 [2.54] Ø0.230 [5.84] CATHODE CL ANODE AND CASE L.E.D. |
Original |
PDI-E805 PDI-E805 | |
SFH4249
Abstract: Q65110A7518 GPLY6127 OHF02505 OHF03819
|
Original |
OS-PCN-2010-033-A. SFH4249 Q65110A7518 GPLY6127 OHF02505 OHF03819 | |
OHLY0598
Abstract: OHF04135
|
Original |
||
SFH4239
Abstract: JESD22-A114-E OHPY3638
|
Original |
JESD22-A114-E SFH4239 JESD22-A114-E OHPY3638 | |
PDI-E804Contextual Info: GaAlAs High Power IR LED Emitters PDI-E804 Advanced Photonix, Inc. PACKAGE DIMENSIONS INCH [mm] CL 0.145 [3.68] 45° 0.040 [1.02] 1.00 [25.4] MIN 0.100 [2.54] MAX CL Ø0.019 [0.48] Ø0.016 [0.41] CL 0.100 [2.54] Ø0.168 [4.27] CATHODE CL ANODE AND CASE L.E.D. |
Original |
PDI-E804 PDI-E804 | |
GPLY6880
Abstract: sideled OHF04132
|
Original |
OS-PCN-2009-021-A2 OS-PCN-2009-021-A2 GPLY6880 sideled OHF04132 | |
SFH4249
Abstract: SFH4248 Q65110A7518 Q65110A7519 ns 4248 4248
|
Original |
OS-PCN-2009-021-A2 OS-PCN-2009-021-A2 SFH4249 SFH4248 Q65110A7518 Q65110A7519 ns 4248 4248 | |