HIGH POWER Search Results

2N5631

Abstract: high power 500 watts audio amplifier power transistor power transistor audio amplifier 500 watts 200 watt audio amplifier with ic 300 watts audio amplifier NPN 200 VOLTS POWER TRANSISTOR 1N5825 2N6031 MSD6100
Contextual Info: 2N5631 High−Voltage − High Power Transistors High−voltage − high power transistors designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage − http://onsemi.com

AB-038

Abstract: OPA544T opa544 AB-039 MUR420 OPA544F OPA544T-1 REF102
Contextual Info: OPA544 High-Voltage, High-Current OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● HIGH OUTPUT CURRENT: 2A min The OPA544 is a high-voltage/high-current operational amplifier suitable for driving a wide variety of high power loads. High performance FET op amp

Contextual Info: OPA544 High-Voltage, High-Current OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● HIGH OUTPUT CURRENT: 2A min The OPA544 is a high-voltage/high-current operational amplifier suitable for driving a wide variety of high power loads. High performance FET op amp

Contextual Info: OPA544 High-Voltage, High-Current OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● HIGH OUTPUT CURRENT: 2A min The OPA544 is a high-voltage/high-current operational amplifier suitable for driving a wide variety of high power loads. High performance FET op amp

Contextual Info: 2SC4538R FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3PF Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frewuency inverters

2sc3320

Abstract: 2sc3320 equivalent 2sc3320 transistor
Contextual Info: 2SC3320 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3P Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency inverters

2SC2929

Contextual Info: 2SC2929 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE, HIGH SPEED SWITCHING Outline Drawings TO-220AB Features High voltage, High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency inverters

HER101

Abstract: HER108
Contextual Info: HER101 THRU HER108 HIGH EFFICIENCY RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere Features Low power loss, high efficiency Low leakage Low forward voltage High current capability High speed switching High surge capability High reliability

VOLTAGE DEPENDENT RESISTANCE

Abstract: corona discharge circuit
Contextual Info: High Voltage Ceramic Capacitors General Characteristics HIGH VOLTAGE USES AND REQUIREMENTS HIGH VOLTAGE / DC USES • High voltage uses are numerous but they can be divided into 3 main applications: - high voltage / AC or power frequency - high voltage / DC

Contextual Info: HER301 - HER305 3.0A HIGH EFFICIENCY RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • • Low Power Loss, High Efficiency Low Leakage Low Forward Voltage Drop High Current Capability High Speed Switching High Surge Current Rating High Reliability

inductive

Abstract: high voltage diodes high voltage high frequency switching DON-50
Contextual Info: DON-50 50Watt High Voltage Mountable Non-Inductive, High Frequency Resistors High Voltage 15kV,High Energy High Frequency Control with High Voltage Power Semiconductor's Switching, Pulsing, True Non-Inductive Powers. DON-50 , Non-Inductive design these elements are ideally suites for high frequency and highh voltage pulse load applications. By direct

Contextual Info: New Product SB1H90 & SB1H100 Vishay General Semiconductor High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • High barrier technology for improved high TJ • Guardring for overvoltage protection • Low power losses and high efficiency

Contextual Info: SGNE045MK High Voltage - High Power GaN-HEMT FEATURES - High Voltage Operation : VDS=50V - High Power : 47.5dBm typ. @ Psat - High Efficiency: 55%(typ.) @ Psat - Linear Gain : 16.0dB(typ.) @ f=2.2GHz - Proven Reliability DESCRIPTION SEDI’s GaN-HEMT offers high efficiency, ease of matching, greater

SGNE030MK

Contextual Info: SGNE030MK High Voltage - High Power GaN-HEMT FEATURES - High Voltage Operation : VDS=50V - High Power : 46.5dBm typ. @ Psat - High Efficiency: 55%(typ.) @ Psat - Linear Gain : 16.0dB(typ.) @ f=2.7GHz - Proven Reliability DESCRIPTION SEDI’s GaN-HEMT offers high efficiency, ease of matching, greater

Contextual Info: SGNE010MK High Voltage - High Power GaN-HEMT FEATURES - High Voltage Operation : VDS=50V - High Power : 40.5dBm typ. @ Psat - High Efficiency: 55%(typ.) @ Psat - Linear Gain : 16.0dB(typ.) @ f=3.5GHz - Proven Reliability DESCRIPTION SEDI’s GaN-HEMT offers high efficiency, ease of matching, greater

Contextual Info: SGNE070MK High Voltage - High Power GaN-HEMT FEATURES - High Voltage Operation : VDS=50V - High Power : 49.5dBm typ. @ Psat - High Efficiency: 70%(typ.) @ Psat - Linear Gain : 21.0dB(typ.) @ f=0.9GHz - Proven Reliability DESCRIPTION SEDI’s GaN-HEMT offers high efficiency, ease of matching, greater

MJE13009d

Abstract: 1A 300V TRANSISTOR MJE13009-D
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13009D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13009D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability.

Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD1313 INDUSTRIAL APPLICATIONS Unit in n HIGH POWER AMPLIFIER APPLICATIONS. HIGH POWER SWITCHING APPLICATIONS. FEATU R E S : . High Power Dissipation : . High Collector Current : . High Speed Switching : . Low Saturation Voltage :

JEP95

Abstract: SST12LP07 SST12LP07-QVCE SST12LP07-QVCE-K
Contextual Info: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07 Preliminary Specifications SST12LP072.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 29 dB gain across 2.4–2.5 GHz over temperature 0°C to +85°C High linear output power:

1N17

Abstract: 1N18 1N19 1n1920
Contextual Info: 1N17 THRU 1N19 SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES * * * * * * * Low power loss, high efficiency Low leakage Low forward voltage High current capability High speed switching High surge capabitity High reliability

SST12LP14A

Abstract: SST12LP14A-QVCE JEP95 SST12LP14A-QVCE-K S7130 S71300-02-000
Contextual Info: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14A Preliminary Specifications SST-GP1214A2.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 29 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C High linear output power:

HER303

Abstract: HER305 HER301 HER302 HER304 HER308
Contextual Info: HER301 THRU HER308 HIGH EFFICIENCY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes FEATURES * * * * * * * Low power loss,high efficiency Low leakage Low forward voltage drop High current capability High speed switching High reliability

Contextual Info: 02N17 THRU 02N19 SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 0.2 Ampere FEATURES * * * * * * * Low power loss, high efficiency Low leakage Low forward voltage High current capability High speed switching High surge capabitity High reliability

02S20

Contextual Info: 02S20 THRU 02S60 SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 60 Volts CURRENT 0.2 Ampere FEATURES * * * * * * * Low power loss, high efficiency Low leakage Low forward voltage High current capability High speed switching High surge capabitity High reliability