HIGH IMPEDANCE MICROPHONE FOR PA Search Results

Contextual Info: DATA SHEET MOS ANALOG INTEGRATED CIRCUIT PD5741T6J LOW NOISE AND HIGH GAIN AMPLIFIER FOR IMPEDANCE CONVERTER OF MICROPHONE DESCRIPTION The μPD5741T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characteristics.

HS350

Contextual Info: DATA SHEET MOS ANALOG INTEGRATED CIRCUIT PD5729T6J LOW NOISE AND HIGH GAIN AMPLIFIER FOR IMPEDANCE CONVERTER OF MICROPHONE DESCRIPTION The μPD5729T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characteristics.

Contextual Info: DATA SHEET MOS ANALOG INTEGRATED CIRCUIT PD5747T6J LOW NOISE AND HIGH GAIN AMPLIFIER FOR IMPEDANCE CONVERTER OF MICROPHONE DESCRIPTION The μPD5747T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characteristics.

Contextual Info: DATA SHEET MOS ANALOG INTEGRATED CIRCUIT PD5742T6J LOW NOISE AND HIGH GAIN AMPLIFIER FOR IMPEDANCE CONVERTER OF MICROPHONE DESCRIPTION The μPD5742T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characteristics.

FET electret microphone

Abstract: TRANSDUCERS ELECTRET electret electret microphone 100mA Junction FET AMPLIFIER DIAGRAM ZN475E a microphone amplifier
Contextual Info: TELECOMMUNICATIONS CIRCUITS MICROPHONE AM PLIFIER FOR TELEPHONE CIRCU ITS ZN475E Some electret transducers are supplied with a built in impedance matching junction FET buffer to operate with a microphone amplifier of low input impedance. The ZN475E has been designed with a high input

Contextual Info: Preliminary Data Sheet PD5758T6J R09DS0017EJ0100 Rev.1.00 Apr 18, 2011 Low Noise and High Gain Amplifier IC for Impedance Converter of Microphone DESCRIPTION The μPD5758T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret

2sk3585

Abstract: GV2 LE diode code GW 17 GV2 LE AND GV2 L
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3585G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  High mutual conductance gm

2SK3372G

Abstract: GV2 LE AND GV2 L
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3372G Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone • Package • High mutual conductance gm

2SK3426G

Abstract: GV2 LE AND GV2 L
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3426G Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone • Package • High mutual conductance gm

2SK3585

Abstract: 2SK358
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3585G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  High mutual conductance gm

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3372G Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone • Features ■ Package • High mutual conductance gm

A1013

Abstract: A1013 transistor transistor A1013 ST3917AD transistor A1013 data DIP28 ST3917A ST3917AN ST3917B ST3917BD
Contextual Info: ST3917A ST3917B SPEECH - TONE/PULSE DIALER - LED INDICATOR . . . . . . SPEECH CIRCUIT 2 TO 4 WIRES CONVERSION PRESENT THE PROPER DC PATH FOR THE LINE CURRENT AND THE FLEXIBILITY TO ADJUST IT ANDALLOWPARALLEL PHONE OPERATION SYMMETRICAL HIGH IMPEDANCE MICROPHONE INPUTS SUITABLE FOR DYNAMIC,

2sk3585

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3585G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Features  Package  High mutual conductance gm

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3372G Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone • Features ■ Package • High mutual conductance gm

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3426G Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone • Features ■ Package • High mutual conductance gm

DIP28

Abstract: ST3917A ST3917AD ST3917AN ST3917B ST3917BD ST3917BN 600w switch mode power supply circuit diagram KEYBOARD SCAN mic earphone
Contextual Info: ST3917A ST3917B SPEECH - TONE/PULSE DIALER - LED INDICATOR . . . . . . SPEECH CIRCUIT 2 TO 4 WIRES CONVERSION PRESENT THE PROPER DC PATH FOR THE LINE CURRENT AND THE FLEXIBILITY TO ADJUST IT AND ALLOW PARALLEL PHONE OPERATION SYMMETRICAL HIGH IMPEDANCE MICROPHONE INPUTS SUITABLE FOR DYNAMIC,

microcontroller base linear voltage stabilizer

Abstract: TEA1097TV hfrx
Contextual Info: Philips Semiconductors Objective specification Speech and loudspeaker amplifier 1C with auxiliary inputs/outputs and analog multiplexer TEA1097TV FEATURES Auxiliary interfaces Line interface • Asymmetrical high input impedance for electret microphone • Low DC line voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3948G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3866 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV

2sk3948

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3948 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV

2sk4083

Abstract: 2sk40
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4083 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV

2SK3866

Abstract: 2SK3866G DIODE MARKING GV 2sk38
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3866G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV

TRANSISTOR MARKING ue

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4083G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV