HIGH GAIN LOW VOLTAGE NPN TRANSISTOR Search Results

Contextual Info: ST13007 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . . . . IMPROVED SPECIFICATION: - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE - DC CURRENT GAIN PRESELECTION - TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS

2SC5011

Abstract: 2SC5011-T1
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5011 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES • High Gain Bandwidth Product fT = 6.5 GHz TYP. • Low Noise, High Gain • Low Voltage Operation

2SC5013

Abstract: 2SC5013-T1 transistor r47 MARKINGR46 marking R46
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5013 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES • High Gain Bandwidth Product fT = 10 GHz TYP. • Low Noise, High Gain • Low Voltage Operation

NTE316

Contextual Info: NTE316 Silicon NPN Transistor High Gain, Low Noise Amp Features: D High Current Gain–Bandwidth Product D Low Noise Figure D High Power Gain Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V

2SC5012-T1

Abstract: transistor marking R37 ghz 2SC5012
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5012 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES • High Gain Bandwidth Product fT = 9 GHz TYP. • Low Noise, High Gain • Low Voltage Operation • 4-pin super minimold Package

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 -FEBRUARY 95_ ZTX1051A _ _ _ FEATURES * Bcev=150V * Very Low Saturation Voltage * High Gain * Inherently Low Noise APPLICATIONS * Em ergency Lighting * Low Noise Audio

NESG210719

Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG210719 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr.

Contextual Info: TXPI 1028 4N22 Solid State Opto-Electronic Low Gain Silicon NPN Coupler DESCRIPTION FEATURES This is a Silicon NPN Opto-Electronic coupler designed for applications requiring low CTR gain at low operating currents and high voltage isolation. ” Low CTR Gain, typically 25 % CTR

Contextual Info: TXPI 1042 4N22A Solid State Opto-Electronic Low Gain Silicon NPN Coupler DESCRIPTION FEATURES This is a Silicon NPN Opto-Electronic coupler designed for applications requiring low CTR gain at low operating currents and high voltage isolation. ” Low CTR Gain, typically 25 % CTR

Contextual Info: TXPI 1044 4N24A Solid State Opto-Electronic High Gain Silicon NPN Coupler DESCRIPTION FEATURES This is a Silicon NPN Opto-Electronic coupler designed for applications requiring high CTR gain at low operating currents and high voltage isolation. ” High CTR Gain, typically 100 % CTR

NEC semiconductor

Abstract: NEC JAPAN marking NEC rf transistor nec npn rf NESG210719 NESG210719-T1 transistor RF S-parameters NEC D7
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG210719 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr.

NESG210719

Abstract: NESG210719-T1
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG210719 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr.

Contextual Info: TXPI 1030 4N24 Solid State Opto-Electronic High Gain Silicon NPN Coupler DESCRIPTION FEATURES This is a Silicon NPN Opto-Electronic coupler designed for applications requiring high CTR gain at low operating currents and high voltage isolation. ” High CTR Gain, typically 100 % CTR

npn 60V 600mw

Abstract: NTE2672 voltage 15v,collector current 40mA VEBO-15V
Contextual Info: NTE2672 Silicon NPN Transistor High Gain, Low Frequency, General Purpose Amp TO92 Type Package Features: D High DC Current Gain: hFE = 800 to 3200 D Low Collector−Emitter Saturation Voltage: VCE sat = 0.5V Max D High Collector−Base Voltage: VEBO ≥ 15V

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product • Low Noise, High Gain • Low Voltage Operation

NTE47

Contextual Info: NTE47 Silicon NPN Transistor High Gain, Low Noise Amp Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V

Contextual Info: Audio, Dual-Matched NPN Transistor SSM2212 Very low voltage noise: 1 nV/√Hz maximum @ 100 Hz Excellent current gain match: 0.5% Low offset voltage VOS : 200 µV maximum Outstanding offset voltage drift: 0.03 µV/°C High gain bandwidth product: 200 MHz

NEC 2532 n 749

Abstract: NEC 2532 PT1060 transistor NEC D 822 P transistor NEC D 587 NEC 2134 transistor transistor c 6091 transistor sp 772 SP 2822
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain • Low Voltage Operation

ssm2212

Abstract: QB1E NPN Monolithic Transistor Pair R840 SSM221 "logarithmic amplifier" ssm2212rz AD8512 MS-012-AA Analog Devices Logarithmic Amplifiers
Contextual Info: Audio, Dual-Matched NPN Transistor SSM2212 Very low voltage noise: 1 nV/√Hz maximum @ 100 Hz Excellent current gain match: 0.5% Low offset voltage VOS : 200 V maximum Outstanding offset voltage drift: 0.03 μV/°C High gain bandwidth product: 200 MHz

Contextual Info: 2STR1215 LOW VOLTAGE FAST-SWITCHING HIGH GAIN NPN POWER TRANSISTOR Features • VERY LOW COLLECTOR-EMITTER SATURATION VOLTAGE ■ HIGH CURRENT GAIN CHARACTERISTIC ■ FAST-SWITCHING SPEED ■ IN COMPLIANCE WITH THE 2002/93/EC EUROPEAN DIRECTIVE ■ MINIATURE SOT-23 PLASTIC PACKAGE

Contextual Info: TXPI 1033 4N49 Solid State Opto-Electronic High Gain Silicon NPN Coupler DESCRIPTION FEATURES This is a Silicon NPN Opto-Electronic coupler designed for applications requiring high CTR gain at low operating currents and high voltage isolation. ” ” ” ”

BUW48

Abstract: Asg TRANSISTOR
Contextual Info: T SCS-THOMSON BUW48 ^ 7 # Meiamiigra@BtiiB8_ BUW49 HIGH POWER NPN SILICON TRANSISTORS . . . . . SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED VER Y LOW SATURATION VOLTAGE AND HIGH GAIN APPLICATION

Contextual Info: Audio, Dual-Matched NPN Transistor MAT12 Very low voltage noise: 1 nV/√Hz maximum @ 100 Hz Excellent current gain match: 0.5% typical Low offset voltage VOS : 200 µV maximum Outstanding offset voltage drift: 0.03 µV/°C typical High gain bandwidth product: 200 MHz

12350

Abstract: 2STD1665 2STD1665T4 D1665 st 833
Contextual Info: 2STD1665 Low voltage fast-switching NPN power transistor Features • Very low collector to emitter saturation voltage ■ High current gain characteristic ■ Fast-switching speed TAB 3 Applications 1 ■ Voltage regulators ■ High efficiency low voltage switching