HIGH FREQUENCY AMPLIFIER Search Results

2SK710

Contextual Info: SILICON N CHANNEL JUNCTION TYPE FIELD EFFECT TRANSISTOR 2SK710 U nit HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AUDIO FREQUENCY AMPLIFIER APPLICATIONS. • • • High |Yfs| : |Yfs| = 25mS Typ. Low Ciss : Ciss = 7.5pF (Typ.)

2sc945

Abstract: 2SC945L 2SC945 R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION 1 The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor. TO-92 FEATURES * Collector-Emitter voltage:

Contextual Info: 2SK711 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK711 High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS typ. • Low Ciss: Ciss = 7.5 pF (typ.)

Contextual Info: UTC KSC945 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION The UTC KSC945 is an audio frequency amplifier high frequency OSC NPN transistor. 1 FEATURES *Collector-Base voltage: BVCBO=60V *Collector current up to 150mA

ta 306

Abstract: 2SC1199 TA306
Contextual Info: 2SC1199 SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm HIGH FREQUENCY WIDE BAND AMPLIFIER APPLICATIONS. 09.39MAK HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS. .08 .4 5MAX . tzrzrn FEATURES: . Low Noise for High and Low Frequency : N F = 4 .O d B M a x .

Contextual Info: HN3G01J TOSHIBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR HN3G01J High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications Unit in mm Absolute Maximum Ratings Ta = 25°C

Contextual Info: 2SC2670 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2670 Unit: mm High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications • Low noise figure: NF = 3.5dB (max) (f = 1 MHz) Absolute Maximum Ratings (Ta = 25°C)

2SC2716

Abstract: 2SC2716-O 2SC2716-R 2SC2716-Y
Contextual Info: 2SC2716 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2716 High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications • Unit: mm Low noise figure: NF = 3.5dB (max) (f = 1 MHz) Maximum Ratings (Ta = 25°C)

2SK298

Abstract: 2SK299 J-10 diode vu J10 DIODE HITACHI 2SK* TO-3
Contextual Info: IHIT4 4MTb205 G013024 4bT blE D 2SK298,2SK299 HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING , HIGH FREQUENCY POWER AMPLIFIER • FEATURES • Low On-Resistance. • High Speed Switching. • High Cutoff Frequency. • No Secondary Breakdown.

2SK221

Abstract: DIODE T25 4 io 2SK220 H241 HITACHI 2SK* TO-3
Contextual Info: 44TbBD5 001301Ö Ibb • HIT4 blE D 2SK220H, 2SK2 21H HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING , HIGH FREQUENCY POWER AMPLIFIER ■ FEATURES • High Speed Switching. • High Cutoff Frequency. • Enhancement-Mode. •

Scans-0017295

Contextual Info: COSSOR IB V.P.A 13-VOLT -2 AMP. INDIRECTLY HEATED VARIABLE MU H.F. PENTODE The Cossor 13 V.P.A. is a variable-mu high frequency screened pentode. It is particularly useful as a high frequency or inter­ mediate frequency amplifier. Its variable-mu characteristic

Contextual Info: Ordering number:ENN5541A NPN Epitaxial Planar Silicon Transistor 2SC5375 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions S21e2=10dB • High gain : typ f=1GHz . · High cutoff frequency : fT=5.2GHz typ. unit:mm

2SA1815

Abstract: 2SC4432 ITR04747 ITR04748
Contextual Info: Ordering number:ENN4625 PNP Epitaxial Planar Silicon Transistors 2SA1815 FM, RF, MIX, IF Amplifier, High-Frequency General-Purose Amplifier Applications Features Package Dimensions • High power gain : PG=25dB f=100MHz . · High cutoff frequency ; fT=750MHz typ.

TRANSISTOR KT 837

Abstract: a1046 transistor A1046 A1684
Contextual Info: Ordering number:ENN5535A NPN Epitaxial Planar Silicon Transistor 2SC5374 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions S21e2=10.5dB • High gain : typ f=1GHz . · High cutoff frequency : fT=5.2GHz typ. unit:mm

2SC5662

Abstract: 2SC3838K 2SC4083 2SC4726 SC-75A T106 T146
Contextual Info: 2SC5662 / 2SC4726 / 2SC4083 /2SC3838K Transistors High-Frequency Amplifier Transistor 11V, 50mA, 3.2GHz 2SC5662 / 2SC4726 / 2SC4083 / 2SC3838K zExternal dimensions (Unit : mm) zFeatures 1) High transition frequency. (Typ. fT= 3.2GHz) 2) Small rbb’⋅Cc and high gain. (Typ. 4ps)

EN4644

Abstract: 2SA1857 2SC4400 MarKING JS 46441 AX SANYO
Contextual Info: Ordering number:EN4644 PNP Epitaxial Planar Silicon Transistor 2SA1857 FM, RF, MIX, IF Amplifier High-Frequency General-Purpose Amplifier Applications Features Package Dimensions • High power gain : PG=25dB typ f=100MHz . · High cutoff frequency : fT=750MHz typ.

490-48

Abstract: 126-58-9 2SC5415A DSA0026081 I-T133
Contextual Info: 2SC5415A Ordering number : ENA1080 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5415A High-Frequency Low-Noise Amplifier Applications Features • • High gain : ⏐S21e⏐2=9dB typ f=1GHz . High cut-off frequency : fT=6.7GHz typ.

3020

Abstract: 3019 2N3019 3020 transistor 2n3020
Contextual Info: 2N 3019 2N 3020 SILICON PLANAR NPN HIGH-CURRENT, HIGH-FREQUENCY AMPLIFIERS The 2N 3019 and 2N 3020 are silicon planar epitaxial NPN transistors in Jedec T O -39 metal case, designed fo r high-current, high-frequency am plifier applications. They feature high gain and low saturation voltages.

PC1658G

Contextual Info: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT uPC1658G LOW NOISE, HIGH FREQUENCY Si MMIC AMPLIFIER DESCRIPTION The ^¡PC1658G is a silicon monolithic integrated circuit designed as amplifier for high frequency system applications.

Contextual Info: CPH6001A Ordering number : ENA1079 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor CPH6001A High-Frequency Low-Noise Amplifier Applications Features • • • • High gain : ⏐S21e⏐2=11dB typ f=1GHz . High cutoff frequency : fT=6.7GHz typ.

Hitachi 2SA

Abstract: Hitachi DSA001650
Contextual Info: 2SA1889 Silicon PNP Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics fT = 300 MHz typ • High voltage and low output capacitance VCEO = –200 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier

Hitachi DSA001650

Contextual Info: 2SA1958 Silicon PNP Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics fT = 500 MHz typ • High voltage and low output capacitance VCEO = −150 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier

Hitachi DSA001650

Contextual Info: 2SA1810 Silicon PNP Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics fT = 300 MHz typ • High voltage and low output capacitance VCEO = –200 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier

2SA1483

Abstract: 2SC3803
Contextual Info: 2SA1483 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1483 High Frequency Amplifier Applications Video Amplifier Applications High Speed SwitcHing Applications Unit: mm • High transition frequency: fT = 200 MHz (typ.) • Low collector output capacitance: Cob = 3.5 pF (typ.)