HIGH FREQUENCY AMPLIFIER Search Results

2SC945

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR  DESCRIPTION The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor.  FEATURES * Collector-Emitter voltage:

Contextual Info: TOSHIBA 2SK709 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK709 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AUDIO FREQUENCY AMPLIFIER APPLICATIONS. • • • &1MAX. High |Yfc| : |Yfs| = 25mS Typ.

1J27

Abstract: 2SK70 2SK709
Contextual Info: TOSHIBA 2SK709 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK709 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AUDIO FREQUENCY AMPLIFIER APPLICATIONS. • • • &1MAX. High |Yfc| : |Yfs| = 25mS Typ.

2SK710

Contextual Info: SILICON N CHANNEL JUNCTION TYPE FIELD EFFECT TRANSISTOR 2SK710 U nit HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AUDIO FREQUENCY AMPLIFIER APPLICATIONS. • • • High |Yfs| : |Yfs| = 25mS Typ. Low Ciss : Ciss = 7.5pF (Typ.)

2sc945

Abstract: 2SC945L 2SC945 R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION 1 The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor. TO-92 FEATURES * Collector-Emitter voltage:

2SK709

Contextual Info: 2SK709 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK709 High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS typ. • Low Ciss: Ciss = 7.5 pF (typ.)

2SK711

Contextual Info: 2SK711 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK711 High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS typ. • Low Ciss: Ciss = 7.5 pF (typ.)

Contextual Info: 2SK711 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK711 High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS typ. • Low Ciss: Ciss = 7.5 pF (typ.)

2SK711

Contextual Info: TOSHIBA 2SK711 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK711 HIGH FREQUENCY AMPLIFIER APPLICATIONS Unit in mm AM HIGH FREQUENCY AMPLIFIER APPLICATIONS + 0.5 2 .5 - 0 . 3 AUDIO FREQUENCY AMPLIFIER APPLICATIONS • High |Yfs| : |Yfs| = 25mS Typ.

2N3866

Abstract: zetex ztx327 2N2708 Zetex bfy90 Transistor 2N3866 2N2102 2N4427 2N918 BFY90 BSY55
Contextual Info: HIGH FREQUENCY TABLE 7 - NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in this table are designed for high frequency operation amplifier and oscillator applications. Reference should be made to the RF Transistors and Diodes section which contains

2N4036

Abstract: TRANSISTOR BC140 transistor 2N2219 BUY90 ZT Ferranti 2N2102 2N2405 2N2708 2N3866 2N4427
Contextual Info: HIGH FREQUENCY TABLE 7 - NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in these tables are designed for high frequency operation Amplifier and Oscillator applications. The tables should be referred to in conjunction with the RF Section which contains details

BXHF1061

Abstract: high frequency
Contextual Info: Model # BXHF1061 High Frequency Microwave Amplifier Frequency Range: 6-10 GHz Features • High Frequency and Broad Bandwidth: 6-10 GHz • High Output Power: +25 dBm Typical • Laser Welded Housing for Ultimate Environmental Protection • Internal Voltage Regulator

Contextual Info: UTC KSC945 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION The UTC KSC945 is an audio frequency amplifier high frequency OSC NPN transistor. 1 FEATURES *Collector-Base voltage: BVCBO=60V *Collector current up to 150mA

2SK710

Contextual Info: TOSHIBA 2SK710 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK710 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AUDIO FREQUENCY AMPLIFIER APPLICATIONS. • • • 4.2 M A X High |Yfc| : |Yfs| = 25mS Typ.

2SK711

Contextual Info: TOSHIBA 2SK711 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL JUNCTION TYPE 2SK711 HIGH FREQUENCY AMPLIFIER APPLICATIONS. A M HIGH FREQUENCY AMPLIFIER APPLICATIONS. A U D IO FREQUENCY AMPLIFIER APPLICATIONS. . High |Yfs| : |Yfs| = 25mS Typ. Low C1SS Ciss = 7.5pF(Typ.)

Contextual Info: HN3G01J TOSHIBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR HN3G01J High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications Unit in mm Absolute Maximum Ratings Ta = 25°C

2SC2670

Abstract: 2SC2670-0 2SC2670-R 2SC2670-Y
Contextual Info: TOSHIBA 2SC2670 2SC2670 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM FREQUENCY CONVERTER APPLICATIONS. Unit in mm 4.2 M AX. Low Noise Figure : NF = 3.5dB (Max.) (f=lMHz)

Contextual Info: 2SC2670 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2670 Unit: mm High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications • Low noise figure: NF = 3.5dB (max) (f = 1 MHz) Absolute Maximum Ratings (Ta = 25°C)

2SC2716

Abstract: 2SC2716-O 2SC2716-R 2SC2716-Y
Contextual Info: 2SC2716 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2716 High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications • Unit: mm Low noise figure: NF = 3.5dB (max) (f = 1 MHz) Maximum Ratings (Ta = 25°C)

BXHF1060

Abstract: high frequency low noise
Contextual Info: Model # BXHF1060 High Frequency Microwave Amplifier Frequency Range: 4-8 GHz Features • High Frequency and Broad Bandwidth: 4-8 GHz • Low Noise Figure: 1.8 dB Typical • Laser Welded Housing for Ultimate Environmental Protection • Internal Voltage Regulator

BXHF1065

Abstract: high frequency low noise
Contextual Info: Model # BXHF1065 High Frequency Microwave Amplifier Frequency Range: 6-12 GHz Features • High Frequency and Broad Bandwidth: 6-12 GHz • Low Noise Figure: 3.0 dB Typical • Laser Welded Housing for Ultimate Environmental Protection • Compliant Option: Model BXHF1065LF

BXHF1064

Abstract: high frequency
Contextual Info: Model # BXHF1064 High Frequency Microwave Amplifier Frequency Range: 2-10 GHz Features • High Frequency and Broad Bandwidth: 2-10 GHz • Low Noise Figure: 4.0 dB Typical • Laser Welded Housing for Ultimate Environmental Protection • Internal Voltage Regulator

2SK298

Abstract: 2SK299 J-10 diode vu J10 DIODE HITACHI 2SK* TO-3
Contextual Info: IHIT4 4MTb205 G013024 4bT blE D 2SK298,2SK299 HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING , HIGH FREQUENCY POWER AMPLIFIER • FEATURES • Low On-Resistance. • High Speed Switching. • High Cutoff Frequency. • No Secondary Breakdown.

2SK221

Abstract: DIODE T25 4 io 2SK220 H241 HITACHI 2SK* TO-3
Contextual Info: 44TbBD5 001301Ö Ibb • HIT4 blE D 2SK220H, 2SK2 21H HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING , HIGH FREQUENCY POWER AMPLIFIER ■ FEATURES • High Speed Switching. • High Cutoff Frequency. • Enhancement-Mode. •