HIGH CURRENT NANOSECOND PULSED DRIVING Search Results

rogowski-coil

Contextual Info: Rev. 09.01 valid from April 2009 LDP-V 50-100 V3 Driver Module for Pulsed Lasers ! ! ! ! ! ! ! ! Compact OEM-module 3 to 50 A output current < 4 ns rise time Pulse width control via SMC trigger input 12 ns to 10 µs Rep. rates from single shot to 2 MHz Single +15 V supply

lidar

Abstract: rangefinding
Contextual Info: Rev. 09.01 valid from April 2009 LDP-V 40-70 Ultra-compact Driver Module for Pulsed Lasers ! ! ! ! ! ! ! ! Ultra-compact OEM-module: 32x15mm 8 to 40 A output current < 7 ns rise time Pulse width control via trigger input 15 ns to 1 µs Rep. rates from single shot to 100 kHz

Contextual Info: Rev. 09.02 valid from April 2009 LDP-V 10-70 Ultra-compact Driver Module for Pulsed Lasers ! ! ! ! ! ! ! ! Ultra-compact OEM-module: 32x15mm 2.5 to 13 A output current < 4 ns rise time Pulse width control via trigger input 10 ns to 1 µs Rep. rates from single shot to 100 kHz

Logic Level N-Channel Power MOSFET

Abstract: AN7254 AN7260 RFP2N20L TB334
Contextual Info: RFP2N20L Data Sheet July 1999 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET File Number Features • 2A, 200V The RFP2N20L N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level 5V driving sources in applications such as

AN7254

Abstract: AN7260 RFP8N20L TB334
Contextual Info: RFP8N20L Data Sheet July 1999 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET File Number Features • 8A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level 5V driving sources in applications such as

2N6902

Contextual Info: 2N6902 S E M I C O N D U C T O R 12A, 100V, 0.200 Ohm, N-Channel Logic Level Power MOSFET September 1997 Features Description • 12A, 100V The 2N6902 is an N-Channel enhancement mode silicon gate power MOS field effect transistor specifically designed for use with logic level 5V driving sources in applications

F12N10L

Abstract: f12n10 TA09526 Logic Level N-Channel Power MOSFET AN7254 AN7260 RFP12N10L TB334
Contextual Info: RFP12N10L Data Sheet July 1999 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET File Number Features • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as

Contextual Info: interdi RFP2N08L, RFP2N10L D a ta S h e e t J u ly 1999 2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs The RFP2N08L and RFP2N10L are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in

AN7254

Abstract: AN7260 RFP2N12L TB334
Contextual Info: RFP2N12L Data Sheet April 1999 2A, 120V, 1.750 Ohm, Logic Level, N-Channel Power MOSFET File Number Features • 2A, 120V The RFP2N12L is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level 5V driving sources in applications such as

SCR TRIGGER PULSE TRANSFORMER

Abstract: thyristor SCR1 SCR TRIGGER PULSE circuit SCR PULSE TRANSFORMER digital triggering scr RC inductive load thyristor design pulse transformer for triggering SCR SCR TRIGGER PULSE scr transformer drive gate PFN DIODE
Contextual Info: MicroNote #601 George Repucci Senior Applications Engineer Nanosecond SCR Switch for Reliable High Current Pulse Generators and Modulators Design requirements for modulator and pulse generator circuits include fast rise time, low jitter to enhance short radar or laser ranging

90C26

Abstract: 90C32 com90c26 COM90C32 91C32 9026 COM 90C32 COM91C32 high current nanosecond pulsed driving arcnet datapoint
Contextual Info: COM90C32 STANDARD MICROSYSTEMS CORPORATION COM 90C32 Local Area Network Transceiver LANT PIN CONFIGURATION FEATURES □ Reduces chip count for COM 9026 and COM 90C26 ARCNET implementations by 6-8 TTL chips □ Performs all clock generation functions for the COM 9026 and COM 90C26

f12n10l

Abstract: f12n10 AN7254 AN7260 RFP12N10L TB334
Contextual Info: RFP12N10L Data Sheet April 2005 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET Features • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as

F12n10

Contextual Info: RFP12N10L Data Sheet April 2005 Features 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as

AN7254

Abstract: AN7260 RFP8N20L TB334
Contextual Info: RFP8N20L Data Sheet January 2002 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET Features • 8A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level 5V driving sources in applications such as

2N6904

Contextual Info: toaucti, Una* TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N6904 N-Channel Logic Level Power MOS Field-Effect Transistors (L2 FET) 8 A, 200 V ros(on): 0.6 0 Features: • Design optimized tor 5 volt gate drive

AN7254

Abstract: AN7260 RFP2N20L TB334
Contextual Info: RFP2N20L Data Sheet January 2002 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET Features • 2A, 200V The RFP2N20L N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level 5V driving sources in applications such as

F12N10L

Abstract: f12n10 RFP12N10L RFP12N10L equivalent AN7254 AN7260 TB334 833ig
Contextual Info: RFP12N10L Data Sheet January 2002 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET Features • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as

2N6903

Contextual Info: • 43D 22 71 DDS 4 70 0 Ì34 ■ HAS 2N 6903 03 HARRIS January 1994 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET Package Features T0-205AF BOTTOM VIEW • 0.98A, 200V • rDS(on) = 3 .6 5 n GATE SOURCE • Design Optimized for 5V Gate Drive

Contextual Info: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. RFP8N20L 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET Features • 8A,200V This N-Channel enhancement mode silicon gate power field

AN7254

Abstract: AN7260 RFP2N08L RFP2N10L TB334
Contextual Info: RFP2N08L, RFP2N10L Data Sheet July 1999 2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs The RFP2N08L and RFP2N10L are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in

f12n10L

Abstract: f12n10
Contextual Info: in te fs il RFP12N10L D ata S h e e t J u ly 1999 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET F ile N u m b e r Features • 12A, 100 V These are N-Channel enhancem ent mode silicon gate power field effect transistors specifically designed for use

F12N10L

Abstract: f12n10
Contextual Info: RFP12N10L S e m iconductor April 1999 Data Sheet 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET • 12A, 100V RFP12N10L PACKAGE TO-22QAB • r DS ON = 0.200i2 • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits

Contextual Info: RFP12N10L October 2013 Data Sheet N-Channel Logic Level Power MOSFET 100 V, 12 A, 200 mΩ Features • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as

RFP2N15L

Abstract: RFL1N12L RFL1N15L RFP2N12L TA9529 TA9528 rfp1n12
Contextual Info: Logic-Level Power MOSFETs RFL1N12L, RFL1N15L, RFP2N12L, RFP2N15L File Number N-Channel Logic Level Power Field-Effect Transistors L2 FET o 1 and 2 A, 120 V and 150 V rDs(on): 1.750 and 1.90 Feature*: • Design optimized for 5 volt gate drive ■ Can be driven directly from Q-MOS, N-MOS, TTL Circuits