HIGH CURRENT FET AMPLIFIER SCHEMATIC Search Results

2SK1814

Abstract: 86J Amplifier suis
Contextual Info: 2SK1814 FUJI POWER MOS-FET N CHANNEL SILICON POWER MOS-FET F-III SERIES I Features Outline Drawings High current _ow no-resistance Mo secondary breakdown _ow driving power High forward Transconductance I Applications Vlotor controllers 3enaral purpose power amplifier

cree MOS

Abstract: 2SK1387-MR T151 a2197
Contextual Info: 2SK1387-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-III SERIES Outline Drawings I Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance •Applications Motor controllers General purpose power amplifier

A2140

Abstract: SK1089 ha 7681 T151
Contextual Info: 2SK1089 FUJI POWER MOS-FET N-CHANIMEL SILICON POWER MOS-FET F-III SERIES • Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■Applications • Motor controllers • General purpose power amplifier

2SK1506

Abstract: SC-65 A2216 2SK1506 equivalent
Contextual Info: 2SK1506 FUJI POWER MOS-FET IJ-CHANNEL SILICON POWER MOS-FET F-III SERIES • Featu res Outline Drawings '* High current # Low no-resistance «»Low driving power liHigh forward Transconductance 111Applications «I»Motor controllers ■iGenaral purpose power amplifier

Contextual Info: Data Sheet High Gain Bandwidth Product, Precision Fast FET Op Amp AD8067 FEATURES CONNECTION DIAGRAM TOP VIEW FET input amplifier: 0.6 pA input bias current Stable for gains ≥8 High speed 54 MHz, −3 dB bandwidth (G = +10) 640 V/µs slew rate Low noise

2SK1086-MR

Abstract: T151
Contextual Info: ÏSK1086-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F -III S E R IE S Outline Drawings I Features High current Low on-resistance I Jo secondary breakdown l ow driving power High forward Transconductance •Applications Motor controllers General purpose power amplifier

H12B

Abstract: AN426 LF400 LH4104 LH4104CG LH4104CN LH4104G N16A 61-0X
Contextual Info: LH4104/LH4104C Fast Settling High Current Operational Amplifier General Description Features The LH4104 is a fast settling high current Bi-Fet op amp designed for applications that require a fast settling time of 500 ns to 0.01% and 100 mA continuous output current.

C 5388

Abstract: TFK U 216 B 2SK1506 TFK 03 Diode SC-65 diode s .* tfk TFK S
Contextual Info: 2SK1506 FUJI POWER MOS-FET U-CHANNEL SILICON POWER MOS-FET F-III SERIES • Features Outline Drawings "»High current <i*Low no-resistance «»Low driving power #High forward Transconductance III Applications •>Motor controllers ■«»Genaral purpose power amplifier

K 3264 fet transistor

Abstract: c 3262 AN428 LF400 G12B LH4105 LH4105C LH4105CG LH4105G K 3264 transistor
Contextual Info: LH4105/LH4105C PRELIMINARY National Jum Semiconductor LH4105/LH4105C Precision Fast Settling High Current Operational Amplifier General Description Features The LH4105 is a fast settling high current Bi-Fet op amp designed for applications that require a fast settling time of

Contextual Info: • PA08A PA08PA08 • PA08A PA08, PA08A Power Operational Amplifier FEATURES • WIDE SUPPLY RANGE — ±15V to ±150V • PROGRAMMABLE OUTPUT CURRENT LIMIT • HIGH OUTPUT CURRENT — Up to ±150mA • LOW BIAS CURRENT — FET Input APPLICATIONS • HIGH VOLTAGE INSTRUMENTATION

PA08U

Contextual Info: PA08PA08 • PA08A • PA08A PA08, PA08A Power Operational Amplifier FEATURES • WIDE SUPPLY RANGE — ±15V to ±150V • PROGRAMMABLE OUTPUT CURRENT LIMIT • HIGH OUTPUT CURRENT — Up to ±150mA • LOW BIAS CURRENT — FET Input APPLICATIONS • HIGH VOLTAGE INSTRUMENTATION

OAAI

Abstract: A2140
Contextual Info: 2SK1089 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S • Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■Applications • Motor controllers • General purpose power amplifier

photodiode preamplifier

Abstract: EPM605LL 1550nm photodiode 5 Ghz fast photodiode amplifier AD8009 AD8065 AD8067 AD8067ART-REEL AD8067ART-REEL7 JDS Uniphase photodiode epm
Contextual Info: High Gain Bandwidth Product Precision Fast FET Op Amp AD8067 FEATURES • FET input amplifier: 0.6 pA input bias current • Stable for gains ≥8 • High speed • 54 MHz, –3 dB bandwidth G = +10 • 640 V/µs slew rate • Low noise • 6.6 nV/√Hz

A2265

Abstract: 2SK1881-L A2-265 a/A2265-12/12
Contextual Info: 2SK1881-L. S FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F -III I Features S E R I E S O utline D raw ings High current Low on-resistance No secondary breakdown Low driving power High forw ard Transconductance I Applications M otor controllers General purpose power amplifier

A2248

Abstract: 2SK1817-MR
Contextual Info: »SK1817-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-III SERIES I Featu res Outline Drawings H ig h current I I ow no-resistance 1rJo secondary breakdown Low driving power High forw ard Transconductance I Applications Motor controllers îenaral purpose power amplifier

TT 2158

Contextual Info: 2SK1212-01R FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES • Features • High current • Low orwesistance • No secondary breakdown • Low driving power • Avalanche-proof ■ Applications • DC-DC converters • Motor controllers • Gt neral purpose power amplifier

2SK1506

Abstract: SC-65
Contextual Info: 2SK1506 F U JI POWER M O S -FET IJ-CHANNEL SILICON POWER MOS-FET F - III • Featu res S E R I E S Outline Drawings '* High current # Low no-resistance «»Low driving power liHigh forward Transconductance 111Applications «I»Motor controllers ■iGenaral purpose power amplifier

diode S467

Contextual Info: 2SK906 F U JI POWER M O S-FET N CHANNEL SILICON POWER MOS-FET F-I SERIES • Features ■Outline Drawings • High current • Low on-resistance • No secondary breakdown • Low driving power ■Applications • DC-DC converters • Motor controlers • General purpose power amplifier

tl081 equivalent ic

Abstract: TL081CP LM741 equivalent capacitor 50k Ac tl081cp IC TL081 TL081 A-TL081 C1995 LF356
Contextual Info: TL081 Wide Bandwidth JFET Input Operational Amplifier General Description The TL081 is a low cost high speed JFET input operational amplifier with an internally trimmed input offset voltage BI-FET IITM technology The device requires a low supply current and yet maintains a large gain bandwidth product

IC LF351

Abstract: LF351 Op Amp IC ic lf351n ic lf351 as operational amplifier application circuits of lm741 LF351N LF351 OPERATIONAL AMPLIFIER LF351 APPLICATION LM741 equivalent 5648
Contextual Info: LF351 Wide Bandwidth JFET Input Operational Amplifier General Description The LF351 is a low cost high speed JFET input operational amplifier with an internally trimmed input offset voltage BI-FET IITM technology The device requires a low supply current and yet maintains a large gain bandwidth product

AD8066

Abstract: HRA SOT 103-114 AD8065 AD8065ARZ BJT datasheet with i-v characteristics fet preamp schematics for a PA amplifier 02916-E-032 Crosstalk-AD8066
Contextual Info: High Performance, 145 MHz FastFET Op Amps AD8065/AD8066 FEATURES APPLICATIONS Qualified for automotive applications FET input amplifier 1 pA input bias current Low cost High speed: 145 MHz, −3 dB bandwidth G = +1 180 V/ s slew rate (G = +2) Low noise

Contextual Info: High Performance, 145 MHz FastFET Op Amps AD8065/AD8066 FEATURES APPLICATIONS Qualified for automotive applications FET input amplifier 1 pA input bias current Low cost High speed: 145 MHz, −3 dB bandwidth G = +1 180 V/ s slew rate (G = +2) Low noise

TL081

Abstract: tl081 datasheets tl081 equivalent TL081A TL081B TL081M transistor BC 157 TL081C TL081CD TL081IN
Contextual Info: TL081 TL081A - TL081B  GENERAL PURPOSE J-FET SINGLE OPERATIONAL AMPLIFIER . . . . . WIDE COMMON-MODE UP TO VCC+ AND DIFFERENTIAL VOLTAGE RANGE LOW INPUT BIAS AND OFFSET CURRENT OUTPUT SHORT-CIRCUIT PROTECTION HIGH INPUT IMPEDANCE J–FET INPUT STAGE

TL082

Abstract: TL082 PIN DIAGRAM ST tl082C st tl082 TL082A TL082B TL082C TL082CD TL082IN
Contextual Info: TL082 TL082A - TL082B GENERAL PURPOSE J-FET DUAL OPERATIONAL AMPLIFIER . . . . . WIDE COMMON-MODE UP TO VCC+ AND DIFFERENTIAL VOLTAGE RANGE LOW INPUT BIAS AND OFFSET CURRENT OUTPUT SHORT-CIRCUIT PROTECTION HIGH INPUT IMPEDANCE J–FET INPUT STAGE INTERNAL FREQUENCY COMPENSATION