HIA TRANSISTOR Search Results

Contextual Info: T O -92 5YM5EMI SEM ICO N DU CTO R BC368, -25 Plastic Encapsulate Transistors TRANSISTOR NPN 1U /— 1 \ luopl 9Z FEATURE Power dissipation PCM : 1. EMITTER 0.625 W (Tamb=25 °C) 2. COLLECTOR Collector current IC M I A 1 3. BASE Collector base voltage

2n5549

Contextual Info: TYPE 2N5549 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR B U L L E T I N N O . D L -S 7 0 1 1 1 2 4 , J U N E 1 9 7 0 FOR LOW-LEVEL CHOPPERS, LOGIC SWITCHES, MULTIPLEXERS, AND RF AND VHF AMPLIFIERS • High lyfsl/Ciss Ratio High-Frequency Figure-of-Merit

PW-201

Abstract: a1641 2044B 2SA1641 t313a 29261
Contextual Info: Ordering number: EN 2926A N°-2926A a _ _ _ _ _ _ _ 2 S A 164 1 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Features Adoption of FBET, MBIT processes. Low saturation voltage. F ast switching speed. Large current capacity. Small and slim package making it easy to make 2SA1641-used set smaller

Contextual Info: N AUER PHILIPS/DISCRETE b^E D • b b S S ^ l 0Q3D7^S ^flT W A P X Philips Semiconductors Product Specification PowerMOS transistor BUK553-100A/B Logic level FET_ _ _ GENERAL DESCRIPTION N-channel enhancement mode

Contextual Info: blE D N AUER PHILIPS/DISCRETE bbSa'IBI 0030465 E'IS « A P X Product Specification Philips Semiconductors BUK437-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

I138

Abstract: 2SA512 2SC512 23A513
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

LP2S

Abstract: BUK545-50A 40608G
Contextual Info: - r - 3 Philips Components Data sheet status Preliminary specification date of issue March 1991 Replaces BUK545-50A/B BUK575-60A/B PowerMOS transistor Logic level FET SbE » PH IL IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode

2SC2812

Abstract: k 2057 3v61 2SA1179 600S8 T29 marking marking AJR 2SC28 AJR MARKING
Contextual Info: SANYO SEMICONDUCTOR CORP 7T=]707t. DDD7B^t EBE D 2SA1179, 2SC2812 1 T -Z 1-I5 P N P /N P N Epitaxial Planar Silicon Transistors 2018A Low-Frequency General-Purpose Amp Applications 3218 F e a tu re s •Small-sized package perm itting the 2SA1179/2SC2812-applied sets to be made small and slim

2SK508

Abstract: 076z marking K52 Vus-50V
Contextual Info: NEC Junction Field Effect Transistor 2SK508 N-Channel Silicon Junction Field Effect Transistor High Frequency Amplifier # */FEA TU RES I PACKAGE DIMENSIONS U n it . mm n y fs|2 (gn.2) ~26 mS T Y P . ( V d s - 5.0 V, V GS-0 , f = 1.0 kHz) 2 . 8 ± 0.2 o1fl.Ci„ r l ' 0

uA740

Abstract: PHILIPS OQ 2222 SOT123 Package UA740 8 pin capacitor polyester philips 2222 311 capacitor philips International Power Sources philips Trimmer 60 pf sot123 437S
Contextual Info: Product specification Philips Semiconductors BLF225 VHF power MOS transistor PHILIPS INTERNATIONAL 711005b GG437S7 44G M P H I N 5bE » PIN CONFIGURATION FEATURES • Easy power control • Good thermal stability • Withstands full load mismatch. D ESCRIPTIO N

Contextual Info: sanyo s e m ic o n d u c t o r corp ~ 1 2 E D | 7 cH 7 Q 7 L i OOOSOb'J r ' 3 3 - I S NPN Triple Diffused Planar Silicon Transistor 2022 Color TV Horizontal Deflection Output Applications with Damper Diode 1222C Features: • High Breakdown Voltage and High Reliability.

2SJ461

Abstract: ITT DIODE W7 MARKING J1A C10535J C10943X marking JE FET D1073
Contextual Info: • S /— h MOSJfê M O S Field Effect Transistor 2SJ461 MOS FET r§ jâ L - ^ "f y 2 S J 4 6 1 Ü 2 . 5 V H 2 Ì Ì J ^ i ' 7 ° C O P 5 1 + ^ ^ M i M O S F E T ? ' <fe U , t e l B E T ' l g l i l T # , U £ - t t A , 0 f f ii/ L r t i h A ' O h* 7 - f

7201U35

Contextual Info: N J C -M O S 3-TERMINAL POSITIVE U 7 VOLTAGE GENERAL DESCRIPTION The NJU7201 series is a C-MOS 3-terminal positive volt­ age regulator which contains internal accurate voltage reference, error amplifier, control transistor and output voltage setting resistor.

BA6435S

Contextual Info: BA6435S 3-phase motor driver The BA6435S is an 1C that is used for driving video cassette recorder capstan motors. Dimensions Units : mm BA6435S (SDIP-M24) Features available in a SDIP-M24 package supply voltage range 4 - 6 V (control block) and 3 ~ 23 V (output block)

Contextual Info: L6561 POWER FACTOR CORRECTOR • VERY PRECISE ADJUSTABLE OUTPUT OVERVOLTAGE PROTECTION ■ MICRO POWERSTART-UPCURRENT 5QjATYP. ■ VERYLOW OPERATING SUPPLY CURRENT (4mA TYP.) ■ INTERNAL START-UP TIMER . CURRENT SENSE FILTER ON CHIP ■ DISABLE FUNCTION

MC3558U

Contextual Info: MC3458 MC3558 MC3358 MOTOROLA SEMICONDUCTOR TECHNICAL DATA DUAL DIFFERENTIAL INPUT OPERATIONAL AMPLIFIERS Dual, Low Power Operational Amplifiers SILICON MONOLITHIC INTEGRATED CIRCUIT Utilizing the circuit designs perfected for recently introduced Quad O perational

TRANSISTOR 8808 W

Abstract: HM5-8808A-8 8808 FTD01 HM-8808A HM5-8808B-8
Contextual Info: i l l H a r r is o u HM-8808 HM-8808A .,co .u c,o - 8K x 8 Asynchronous CMOS Static RAM Module January 1992 Features Description • Full CMOS Design The HM-8808 and HM-8808A are 8K x 8 Asynchronous CMOS Static RAM Modules, based on multi-layered, co-fired, dual-in-line

Contextual Info: L6561 POWER FACTOR CORRECTOR • VERY PRECISE ADJUSTABLE OUTPUT OVERVOLTAGE PROTECTION ■ MICRO POWERSTART-UPCURRENT 5QjATYP. ■ VERYLOW OPERATING SUPPLY CURRENT (4mA TYP.) ■ INTERNAL START-UP TIMER . CURRENT SENSE FILTER ON CHIP ■ DISABLE FUNCTION

Contextual Info: April 1997 Micro Linear ML4871 High Current Boost Regulator GENERAL DESCRIPTION FEATURES The ML4871 is a continuous conduction boost regulator designed for D C to D C conversion in multiple cell battery powered systems. Continuous conduction allows the regulator to maxim ize output current for a given inductor.

TC518512A

Abstract: TC518512AF tc518512aft
Contextual Info: IN T E G R A T E D CIRCUIT T O S H IB A M O S DIG IT A L IN TEGR ATED CIRCUIT T C 5 1 8 5 1 2 A F / A F T / A T R - 70, - 8 0 TOSHIBA TE C H N IC A L 5 2 4 ,2 8 8 W O R D S x 8 DATA BIT C M O S SILICON GATE C M O S PSEUDO STATIC RAM TEN TA TIVE DESCRIPTION

FC50E

Abstract: UA79M06C
Contextual Info: TEXAS INSTR L I N / I N T F C Ù tìbl724 O D Ö b i n 70T I TII4 UA79M00 SERIES NEGATIVE-VOLTAGE REGULATORS SOE D • D2216, JUNE 1976 - REVISED SEPTEMBER 1991 3-Terminal Regulators NOM INAL OUTPUT VOLTAGE Output Current Up to 500 mA No External Components

texas diode opto TIL 09

Abstract: til 701 D2987 til 081 TIL190-1 til-169 TIL1901 TIL190-4 2401 opto tl 701
Contextual Info: TIL189 1 THRU T1L189-4 TIL190-1 THRU T i l l 90-4 OPTOCOUPLERSfOPTOISOLATORS S O Q S 03S A D 2 9 8 7 , J A N U A R Y 1 9 8 7 High Direct-Current Transfer Ratios. 5 0 0 % Minimum at Jf - 10 mA and Up to 1 5 0 0 % at Ip - 2 m A w ith Choice of Four Categories

5962-9452101M2A

Abstract: OP497 OP297 OP497AY OP497CY OP497FP OP497FS OP497GP OP97 op-497s
Contextual Info: FEATURES Low Offset Voltage: 50 ␮V max Low Offset Voltage Drift: 0.5 ␮V/؇C max Very Low Bias Current 25؇C: 100 pA max –55؇C to +125؇C: 450 pA max Very High Open-Loop Gain: 2000 V/mV min Low Supply Current per Amplifier : 625 ␮A max Operates from ؎2 V to ؎20 V Supplies

fuse smd code ud

Abstract: Zener diode smd marking code 621 transistor 6823 Zener diode smd marking code 63A C3811 CT PRO XT 150 SELV 1ELC Zener diode smd marking code nu smd NPN transistor 624
Contextual Info: Rugged Environment DC-DC Converters <40 W IMX 7-Family 7 W DC-DC Converters IMX 7-Family Input/output Isolation test voltage up to 1500 Vm, Single, double outputs o f 3 .3 ,5 ,1 2 ,1 5 and 24 V DC biput voltage ranges: 8.4.36 V DC, 16.8.75 V DC and 40.121 V DC