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hfu1n70 Abstract: mosfet hfu1n70 Contextual Info: BVDSS = 700 V RDS on typ = 14.0 Ω HFD1N70 / HFU1N70 ID = 0.8 A 700V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3  Originative New Design 3 HFD1N70  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source D	Original	HFD1N70 HFU1N70 HFD1N70 O-252 O-251 hfu1n70 mosfet hfu1n70	PDF

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hfu1n70

Abstract: mosfet hfu1n70
Contextual Info: BVDSS = 700 V RDS on typ = 14.0 Ω HFD1N70 / HFU1N70 ID = 0.8 A 700V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3  Originative New Design 3 HFD1N70  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source D

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HFD1N70 HFU1N70 HFD1N70 O-252 O-251 hfu1n70 mosfet hfu1n70

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