HFP2N65 Search Results
HFP2N65 Datasheets Context Search
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Contextual Info: BVDSS = 650 V RDS on typ = 5.0 Ω HFP2N65S ID = 1.8 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 Superior Avalanche Rugged Technology Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances |
Original |
HFP2N65S O-220 54typ | |
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Contextual Info: BVDSS = 650 V RDS on typ = 4.5 Ω HFP2N65 ID = 1.8 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 Superior Avalanche Rugged Technology Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances |
Original |
HFP2N65 O-220 54typ |