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    HFP2N60

    Contextual Info: BVDSS = 600 V RDS on typ = 4.2 Ω HFP2N60S ID = 2.0 A 600V N-Channel MOSFET TO-220 FEATURES  Originative New Design 1  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances


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    HFP2N60S O-220 54typ HFP2N60 PDF