HFP10N65S Search Results
HFP10N65S Datasheets Context Search
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Contextual Info: BVDSS = 650 V RDS on typ = 0.83 Ω HFP10N65S ID = 9.2 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) |
Original |
HFP10N65S O-220 54typ |