HFE TRANSISTOR 200 Search Results
HFE TRANSISTOR 200 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| BLA1011-300 |
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BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| 54F151LM/B |
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54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
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| ICL7667MJA |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
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| 93L422ADM/B |
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93L422A - 256 x 4 TTL SRAM |
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| 93425ADM/B |
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93425 - 1K X 1 TTL SRAM |
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HFE TRANSISTOR 200 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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HN3C51F
Abstract: MARKING L toshiba TRANSISTOR 015G hn3c51 015G
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HN3C51F HN3C51F MARKING L toshiba TRANSISTOR 015G hn3c51 015G | |
HN4A51JContextual Info: HN4A51J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A51J Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.) |
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HN4A51J -120V HN4A51J | |
hn3a51fContextual Info: HN3A51F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN3A51F Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.) |
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HN3A51F -120V hn3a51f | |
HN4C51JContextual Info: HN4C51J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C51J Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) |
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HN4C51J HN4C51J | |
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Contextual Info: HN4C06J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C06J Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) |
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HN4C06J | |
HN4A06JContextual Info: HN4A06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A06J Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.) |
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HN4A06J -120V HN4A06J | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA Max. * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise |
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2SC2712 150mA 2SC2712G-x-AE3-R 2SC2712G-x-AL3-R 2SC2712L-x-T92-R 2SC2712G-x-T92-R OT-23 OT-323 OT-23/SOT-323 2SC2712-Y | |
2SC2712-G R
Abstract: 2SC2712 TRANSISTOR BL 100 2SC2712-Y 2SC2712G 2SC2712-G 2SC2712L 2SC2712Y IC150 transistor 5 gr
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2SC2712 150mA OT-23 OT-323 2SC2712L 2SC2712G 2SC2712-x-AE3-R 2SC2712-x-AL3-R 2SC2712L-x-AE3-R 2SC2712G-x-AE3-R 2SC2712-G R 2SC2712 TRANSISTOR BL 100 2SC2712-Y 2SC2712G 2SC2712-G 2SC2712L 2SC2712Y IC150 transistor 5 gr | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA Max. * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise |
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2SC2712 150mA 2SC2712L-x-AE3-R 2SC2712G-x-AE3-R 2SC2712L-x-AL3-R 2SC2712G-x-AL3-R 2SC2712L-x-T92-R 2SC2712G-x-T92-R OT-23 OT-323 | |
2SC2712
Abstract: 2SC2712-G R 2SC2712Y marking LG sot-23 TRANSISTOR BL 100 2SC2712-G 2SC2712L 2SC2712-O 2SC2712-Y
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2SC2712 150mA OT-23 2SC2712L 2SC2712-x-AE3-R 2SC2712L-x-AE3-R QW-R206-029 2SC2712 2SC2712-G R 2SC2712Y marking LG sot-23 TRANSISTOR BL 100 2SC2712-G 2SC2712L 2SC2712-O 2SC2712-Y | |
2SC2712
Abstract: 2SC2712G 2SC2712L 2SC2712-G R 2SC2712-Y 2SC2712-G sot-323 Marking LG 2SC2712Y transistor 5 gr
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2SC2712 150mA 2SC2712L 2SC2712G 2SC2712-x-AE3-R 2SC2712-x-AL3-R 2SC2712L-x-AE3-R 2SC2712G-x-AE3-R 2SC2712L-x-AL3-R 2SC2712G-x-AL3-R 2SC2712 2SC2712G 2SC2712L 2SC2712-G R 2SC2712-Y 2SC2712-G sot-323 Marking LG 2SC2712Y transistor 5 gr | |
2sc2712
Abstract: C 029 Transistor
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2SC2712 150mA OT-23 OT-323 2SC2712L 2SC2712G 2SC2712L-x-AE3-R 2SC2712G-x-AE3-R 2SC2712L-x-AL3-R 2SC2712G-x-AL3-R 2sc2712 C 029 Transistor | |
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Contextual Info: SEMICONDUCTOR KTA1517S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES ・High Voltage : VCEO=-120V. ・Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE: hFE=200～700. ・Low Noise : NF=1dB(Typ.), 10dB(Max.). |
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KTA1517S -120V. KTC3911S. -120V, -10mA, | |
HN4C06J
Abstract: HN4C06
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HN4C06J 150oducts HN4C06J HN4C06 | |
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HN4C06JContextual Info: HN4C06J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C06J Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = 120V z High hFE : hFE = 200~700 z Excellent hFE linearity Unit: mm : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) |
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HN4C06J HN4C06J | |
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Contextual Info: HN4A06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A06J Unit: mm Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = −120V z High hFE : hFE = 200~700 z Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.) |
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HN4A06J -120V | |
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Contextual Info: HN4C06J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C06J Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = 120V z High hFE : hFE = 200~700 z Excellent hFE linearity Unit: mm : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) |
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HN4C06J | |
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Contextual Info: HN3C51F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN3C51F Unit: mm Audio Frequency General Purpose Amplifier Applications z z z High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) |
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HN3C51F | |
HN3C51FContextual Info: HN3C51F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN3C51F Unit: mm Audio Frequency General Purpose Amplifier Applications z z z High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) |
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HN3C51F HN3C51F | |
HN3A51FContextual Info: HN3A51F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN3A51F Unit: mm Audio Frequency General Purpose Amplifier Applications z z z z High voltage : VCEO = −120V : hFE = 200~700 High hFE Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.) |
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HN3A51F -120V HN3A51F | |
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Contextual Info: HN4C51J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C51J Audio Frequency General Purpose Amplifier Applications z z z z Unit: mm High voltage : VCEO = 120V High hFE : hFE = 200 to 700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) |
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HN4C51J | |
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Contextual Info: HN4C06J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C06J Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = 120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity Unit: mm : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) |
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HN4C06J | |
Marking 34-Q1Contextual Info: HN4A51J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A51J Audio Frequency General Purpose Amplifier Applications z z z z Unit: mm High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.) |
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HN4A51J -120V Marking 34-Q1 | |
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Contextual Info: 2SC2713 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2713 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700 |
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2SC2713 2SA1163 | |