HFE CLASSIFICATION MARKING 24 Search Results

2SD1819A

Abstract: transistor ZR 2SD1819AR 2SB1218A 2SD1819AS 2SD1819A-R 2SD1819A-S
Contextual Info: 2SD1819A 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente 24 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES High DC Current Gain. Low collector to emitter saturation voltage VCE sat . Complementary to 2SB1218A

2SA2154MFV

Abstract: 2SA21 2SC6026MFV 21l1A 2sc602
Contextual Info: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity

hFE CLASSIFICATION Marking CE

Abstract: 2SC3325
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3325 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High voltage: VCEO = 50 V min . 1 Small package. 0.55 Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA). +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features

2SA1213

Abstract: pnp hfe 120-240 2SA1213Y 2SA1213-O
Contextual Info: 2SA1213 MCC TM Micro Commercial Components Features x x x x x 2SA1213-O
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1213-Y PNP Silicon Epitaxial Transistors Low Saturation voltage: VCE sat =0.5V(max.)(IC=1.0A)

pnp hfe 120-240

Contextual Info: MCC TM Micro Commercial Components Features • • • • • PNP Silicon Epitaxial Transistors Low Saturation voltage: VCE sat =0.5V(max.)(IC=1.0A) Small flat package PC=1.0 to 2.0W(mounted on ceramic substrate) High Speed Switching Time : tstg =1.0µs(typ.)

Contextual Info: 2SA1313 SILICON PNP EPITAXIAL TYPE AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS. Unit in mm + CL5 & 5 -Q 3 + 0.2 5 DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. i.5-ai 5 EE- FEATURES: . Excellent hpg Linearity : hj?g 2 = 25(Min.) at V c e =-6V. Ic=-400mA

NY25

Abstract: 2SA1213-O
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x x x x x 2SA1213-O 2SA1213-Y PNP Silicon Epitaxial Transistors Low Saturation voltage: VCE sat =0.5V(max.)(IC=1.0A)

2SA1213Y

Abstract: 2SA1213-O
Contextual Info: MCC TM Micro Commercial Components 2SA1213-O
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1213-Y Features x x x x x PNP Silicon Epitaxial Transistors Low Saturation voltage: VCE sat =0.5V(max.)(IC=1.0A)

2SA1213-O

Contextual Info: 2SA1213 MCC TM Micro Commercial Components Features x x x x x 2SA1213-O
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1213-Y PNP Silicon Epitaxial Transistors Low Saturation voltage: VCE sat =0.5V(max.)(IC=1.0A)

C1959

Abstract: c1959 transistor 2sc1959 c1959 Y transistor C1959 NPN Transistor 2SC1959Y transistor c1959 2SC1959-GR 2SC1959-Y 400 Watt Audio amplifier IC
Contextual Info: MCC TM Micro Commercial Components 2SC1959-O 2SC1959-Y 2SC1959-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • x x • Audio frequency low power amplifier applications, driver stage

C1959

Abstract: 2SC1959 c1959 Y transistor c1959 transistor 2SC1959Y
Contextual Info: MCC TM Micro Commercial Components 2SC1959-O 2SC1959-Y 2SC1959-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • x x • Audio frequency low power amplifier applications, driver stage

c3199

Abstract: transistor c3199 C3199 transistor transistor C3199 GR C3199 gr ktC3199 transistor C3199 y
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components KTC3199 Features • • • • High DC Current Gain: hFE=70~700 Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ)

KTC3876S

Abstract: KTA1505S
Contextual Info: SEMICONDUCTOR KTC3876S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L Excellent hFE Linearity 2 A H 1 P Collector-Base Voltage VCBO 35 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage

Contextual Info: KSC2759 NPN EPITAXIAL SILICON TRANSISTOR MIXER, OSCILLATOR FOR UHF TUNER SO T-23 ABSOLUTE MAXIMUM RATINGS T,=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature

Transistor hFE CLASSIFICATION Marking CE

Abstract: KTA511T KTC611T
Contextual Info: SEMICONDUCTOR KTA511T TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B FEATURES 1 Excellent hFE Linearity DIM MILLIMETERS _ 0.2 A 2.9 + 5 B F 2 3 4 CHARACTERISTIC C SYMBOL RATING UNIT Collector-Base Voltage

KTC811T

Abstract: KTA711T
Contextual Info: SEMICONDUCTOR KTC811T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES K 1 6 G 2 5 G Excellent hFE Linearity K B 3 4 DIM A B C D E : hFE 2 =25(Min.) at VCE=6V, IC=400mA. F G D A F Complementary to KTA711T.

Contextual Info: KSC2881 NPN Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage : VCEO=120V • Current Gain Bandwidth Productor : fT=120MHz • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1201 Marking 2 8 8 1 P Y

SOT89 MARKING CODE B2

Abstract: KSC2881 KSA1201
Contextual Info: KSC2881 NPN Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage : VCEO=120V • Current Gain Bandwidth Productor : fT=120MHz • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1201 Marking 2 8 8 1 P Y

KTA711T

Abstract: KTC811T
Contextual Info: SEMICONDUCTOR KTA711T TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES K 1 6 G 2 5 G Excellent hFE Linearity K B 3 4 DIM A B C D E : hFE 2 =25(Min.) at VCE=-6V, IC=-400mA. D A F Complementary to KTC811T.

Contextual Info: 2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1588 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA

Contextual Info: KSC3123 NPN EPITAXIAL SILICON TRANSISTOR MIXER FOR VHF TV TUNER SOT-23 Gce = 2 3dB Cre - 0 . 4 p F ABSOLUTE MAXIMUM RATINGS T a = 2 5 ° o Unit Symbol Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current

2SA1588

Abstract: 2SC4118
Contextual Info: 2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1588 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA

Contextual Info: 2SA1182 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1182 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA

2SA1182

Abstract: 2SC2859
Contextual Info: 2SA1182 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1182 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA