HF SSB APPLICATIONS RF 28 V Search Results

MS1226

Contextual Info: MS1226 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device

Contextual Info: MS1226 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device

HF SSB APPLICATIONS RF 28 v

Abstract: j192
Contextual Info: MS1076 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features 30 MHz 28 VOLTS GOLD METALLIZATION POUT = 220 W PEP GP = 12 dB GAIN MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1076 is a 28 volt epitaxial NPN silicon planar transistor designed primarily for SSB and VHF communications. This

SD1730

Abstract: Planar choke TH560 choke C20 C24
Contextual Info: SD1730 TH560 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD −30dB EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 220 W PEP WITH 12 dB GAIN .500 4 LFL (M174) epoxy sealed ORDER CODE SD1730 BRANDING

choke coil

Abstract: SD1729 TH416
Contextual Info: SD1729 TH416 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION POUT = 130 W PEP WITH 12 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1729 BRANDING TH416 PIN CONNECTION

SD1729

Abstract: TH416 88nF
Contextual Info: SD1729 TH416 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION P OUT = 130 W PEP WITH 12 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1729 BRANDING TH416 PIN CONNECTION

SD1730

Abstract: TH560 arco
Contextual Info: SD1730 TH560 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD −30dB EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION P OUT = 220 W PEP WITH 12 dB GAIN .500 4 LFL (M174) epoxy sealed ORDER CODE SD1730 BRANDING

Contextual Info: SGS-THOMSON SD1729 TH416 IILG RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . OPTIMIZED FOR SSB . 30 MHz . 28 VOLTS • IMD -3 0 dB . COMMON EMITTER . GOLD METALLIZATION ■ P o u t = 130 W P E P WITH 12 dB GAIN DESCRIPTION The SD1729 is a Class AB 28 V epitaxial silicon

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1078 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • • • Optimized for SSB 30 MHz 28 Volts IMD –30dB Common Emitter Gold Metallization

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1077 RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • • • Optimized for SSB 30 MHz 28 Volts IMD –30dB Common Emitter Gold Metallization

HF SSB APPLICATIONS

Abstract: MS1078
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1078 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • • • Optimized for SSB 30 MHz 28 Volts IMD –30dB Common Emitter Gold Metallization

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1226 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION

MS1226

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1226 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION

SD1407

Abstract: VK-200 arco 463
Contextual Info: SD1407 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . 30 MHz 28 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION POUT = 125 W MIN. WITH 15 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1407 BRANDING 1407 PIN CONNECTION DESCRIPTION The SD1407 is a 28 V epitaxial silicon NPN planar

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1000 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • • 30 MHz 28 VOLTS IMD = -30 dB GOLD METALLIZATION POUT = 125 WATTS GP = 15dB MINIMUM

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1000 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • • 30 MHz 28 VOLTS IMD = -30 dB GOLD METALLIZATION POUT = 125 WATTS GP = 15dB MINIMUM

Contextual Info: Æ T S G S - T H O M S O N ^ 7 # , M a im ie T O (M P (g S _ S D 1 7 3 0 (T H 5 6 0 RF & MICROWAVE TR AN SISTO R S _ HF SSB APPLICATIONS . OPTIMIZED FOR SSB • 30 MHz » 28 VOLTS ■ IMD -30dB . EFFICIENCY 40% . COMMON EMITTER

MS1076

Abstract: HF SSB APPLICATIONS
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1076 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • 30 MHz 28 VOLTS GOLD METALLIZATION POUT = 220 W PEP GP = 12 dB GAIN MINIMUM COMMON EMITTER CONFIGURATION

SD1019

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1019 RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • 136 MHz 13.5 V Common Emitter POUT = 0.6 W Min. Gain = 10.8 dB DESCRIPTION: The SD1019 is a 28 V Class C epitaxial silicon NPN planar transistor

Contextual Info: S G S -T H O M S O N ;[L[i gra ifl i S D 12 2 4 -1 0 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS 5 7 . • . . . . 30 MHz 28 VOLTS IMD -2 8 dB COMMON EMITTER GOLD METALLIZATION ■ P o u t = 30 W MIN. WITH 18 dB GAIN PIN CONNECTION 1 4 /\ © DESCRIPTION

philips ferroxcube 4c6

Abstract: ferroxcube 4322 020 97171 68w transistor transistor 68W MCA264 choke marking nb 03 FERROXCUBE 4330 BLF175 ferroxcube 4322 M11 marking transistor
Contextual Info: Philips Semiconductors Product specification HF/VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES 7 ^ 3 1 -// SbE D I 7110Û2L BLF175 DGM3712 2Ô2 « P H I N PIN CONFIGURATION • High power gain • Low intermodulation distortion • Easy power control

Contextual Info: bbSa^El ODETBbM 404 « A P X Philips Semiconductors Product specification HF/VHF power MOS transistor — BLF175 N AMER PHILIPS/DISCRETE FEATURES b'JE D PIN CONFIGURATION • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability

plji

Abstract: transistor C4 016 LM 2222 2222 kn a 2222-581 AI 757 BLF241 UBB777
Contextual Info: Philips Semiconductors_ Product specification HF/VHF power MOS transistor SbE J> m pLJILIPS INTERNATIONAL FEATURES • • • • • BLF241 711DflSb 00437bfc. 453 • PHIN PIN CONFIGURATION 7 “ 3 ^ " " 0 High power gain Easy power control

MRF485

Abstract: mrf477 MRF475 MRF476 Motorola transistors MRF476 Motorola transistors MRF475 Motorola transistors MRF455 MRF466 MRF455 MRF460
Contextual Info: "W . CASE 211-07 CASE 211-09 .380" Flange] CASE 145A-09 (.380' Stud CASE 145A-10 (.500'’ Stud) CASE 211-11 (.500'' Flange; BIPOLAR TRANSISTORS Motorola’s broad line of bipolar RF Power Transistors are de­ signed for operation in RF Power Amplifiers. These transistors