HF 330 Search Results

2 SB 178

Abstract: smd SB sb 225 230 NB smd transistor
Contextual Info: SMD Multilayer Frrite Chip Beads Packaging Specifications Tape Dimensions Tape Material Reel Dimensions Carrier tape: PC Cover type: PET 160mm MIN. Blank Part Chip Mounting Part Blank Cover Tape •：SB / PB / NB /HF 330mm MIN. Leader ‚： SB / PB / UPB / NB / GB / HF

Contextual Info: HF-C SERIES DATA SHEET TRANSIENT VOLTAGE SUPPRESSORS – HF-C SERIES FEATURE Axial lead terminals High current transient suppressor Excellent clamping capability. Glass passivated junction. Bi-directional. Low slope resistance. Repetition Rate duty cycle :0.01%.

Contextual Info: HF-L SERIES DATA SHEET TRANSIENT VOLTAGE SUPPRESSORS – HF-L SERIES FEATURE Axial lead terminals High current transient suppressor Excellent clamping capability. Glass passivated junction. Bi-directional. Low slope resistance. Repetition Rate duty cycle :0.01%.

TPV3100

Abstract: TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A
Contextual Info: TABLE OF CONTENTS INTRODUCTION iii GENERAL INFORMATION iv QUALITY ASSURANCE & RELIABILITY v PRODUCT INDEX Alphanumeric vi RF POWER TRANSISTORS ! ! ! ! ! ! ! ! ! ! ! HF SSB HF MOSFETS VHF VHF & UHF MOSFETS UHF UHF MILITARY PULSED AVIONICS PULSED RADAR CW MICROWAVE

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : 744032331 SMD HF-Drossel WE-LQ SMD HF-CHOKE WE-LQ Bezeichnung : description : DATUM / DATE : 2006-07-14 A Mechanische Abmessungen / dimensions: D Typ M

BY206

Abstract: BLW78 1206 resistor MGP560 mica trimmer capacitor polyester capacitor BR 8 TRANSISTOR
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW78 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor BLW78 It has a 1⁄2" flange envelope with a ceramic cap. All leads are isolated from the flange.

SMD marking code GEM

Abstract: smd code marking 777 BHW MARKING CODE GFR 310 marking code BFK marking code BEV bfm smd code marking 652 smd GFD 1440 230 HF smd code
Contextual Info: SMD Transient Voltage Suppressor TV15C5V0-HF Thru. TV15C441-HF Working Peak Reverse Voltage: 5.0 - 440 Volts Power Dissipation: 1500Watts RoHS Device Halogen Free Features -Glass passivated chip. -1500 W peak pulse power capability with a 10/1000µs waveform, repetitive rate

BLF573

Abstract: transistor b1 BLF573S C4532X7R1E475MT020U
Contextual Info: BLF573; BLF573S HF / VHF power LDMOS transistor Rev. 3 — 8 July 2010 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.

Contextual Info: • A23SbOS 0035334 2 ■ SIE G Selection Guide SIEMENS AKTIEN6ESELLSCHAF M7E D EMI suppression chokes HF chokes, SMD chip inductors HF chokes, axial and unidirectional 0752 E—05 A19 M7E D ■ ô235bD5 QG3Ô437 1 « S I E G B82422 EMI Suppression Chokes

ECEB1EF221

Abstract: ECE-B1J panasonic axial series capacitors
Contextual Info: Aluminum Electrolytic Capacitors Axial Lead Type HF Series HF Series Features • Low impedance at high frequency and low temperature ■ W ide operating temperature range from - 5 5 to +105"C ■ Long life 2000 - 5000 hours at + 1 05°C Specifications Perform ance Characteristics

ELECTRONIC BALLAST compact LAMP SCHEMATIC

Abstract: ELECTRONIC BALLAST 6 LAMP SCHEMATIC TLD58W 1N4148 sod27 ELECTRONIC BALLAST DIAGRAM schematic lamp ballast capacitor 33uf 450v philips CFL inverter circuit schematic diagram SFR25H resonant half bridge ballast schematic
Contextual Info: APPLICATION NOTE HF-TL Ballast with UBA2021 for TLD58W Lamp AN98099 Philips Semiconductors HF-TL Ballast with UBA2021 for TLD58W Lamp Application Note AN98099 Abstract A description is given of a 58 W electronic TL ballast demo board PR39091 , which is able to drive a standard

capxon capacitor

Abstract: capacitor capxon CapXon cap CapXon E162 CapXon series capxon vent
Contextual Info: CapXon HF Series HF Series Flame Retardant Type at 105℃ Features ◆ Flame Retardant type capacitor with high temperature. ◆ Best for switching power supplies, etc. ◆ Aluminal case designed explosion-proof vent. ◆ RoHS Compliant ◆ For detail specifications, please refer to Engineering Bulletin NO. E162

Contextual Info: SL2S1412; SL2S1512; SL2S1612 ICODE ILT-M Rev. 3.0 — 2 May 2012 230330 Product short data sheet COMPANY PUBLIC 1. General description The ISO 18000-3 mode 3/EPC Class-1 HF standard allows the commercialized provision of mass adoption of HF RFID technology for passive smart tags and labels. Main fields of

4c6 toroids

Abstract: Design of H.F. Wideband Power Transformers Philips Application Note ECO6907 4C6 toroid AN98030 2222 632 BLW96 ECO6907 BLW50F blw96 equivalent
Contextual Info: APPLICATION NOTE Two-stage wideband HF linear amplifier for 400 W PEP using BLW96 and BLW50F AN98030 Philips Semiconductors Two-stage wideband HF linear amplifier for 400 W PEP using BLW96 and BLW50F Application note AN98030 CONTENTS 1 PART 1 SINGLE-STAGE WIDEBAND 1.6 − 30 MHz LINEAR AMPLIFIER FOR 400 W PEP USING TWO BLW96

270611

Contextual Info: Europe: +49 / 7731 8399 0 | Email: info@meder.com USA: +1 / 508 295 0771 | Email: salesusa@meder.com Asia: +852 / 2955 1682 | Email: salesasia@meder.com Item No.: 3305100174 Item: SIL05-1A72-74D SIL HF Relais Modifications in the sense of technical progress are reserved

Contextual Info: Transient Voltage Suppressors HF-L Series FEATURES Axial lead terminals High current transient suppressor Excellent Clamping Capability. Glass Passivated Junction. Bi-directional. Low Slope Resistance. Repetition Rate (duty cycle):0.01%. Hazardous Substances Free.

transistor t06

Abstract: RD00HHS1-101 lal04na1r0 RD00HHS1 t06 TRANSISTOR LAL04NAR39 TRANSISTOR 7533 A LAL04NA
Contextual Info: ELECTROSTATIC SENSITIVE DEVICE Silicon RF Power Semiconductors OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD00HHS1 Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.

SIEMENS 565-2

Abstract: B81121 X2 MKP B82524-V-A7 B85321-A-B9 B85321-A-B11 b81551-a-B9 B82302-A-A2 B85321-A-B12 B82791-A5-A5 Siemens B81121
Contextual Info: Inhaltsverzeichnis, Bestellnummern-Verzeichnis Bauformen-Übersicht Seite 5 12 Allgemeines 33 Entstörkondensatoren 53 Durchführungskondensatoren Durchführungsfilter 77 93 HF-Drosseln 105 Drosseln für Netzanwendungen 135 Drosseln und Filter für Daten- und Signalleitungen

16HHF1

Abstract: RD16HHF1 TRANSISTOR D 471 RD 15 hf mitsubishi transistor d 1680 MOSFET 606 transistor d 1564 mosfet HF amplifier p 471 mosfet RD16HHF
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE DRAWING RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.

c 879 transistor

Abstract: transistor t06 TRANSISTOR 7533 mosfet HF amplifier RD00HHS1 a 933 transistor f-30MHz 933 TRANSISTOR
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications. 4.4+/-0.1

RD16HHF1

Abstract: RD16HHF1 application notes RD16HHF1-101 mosfet HF amplifier transistor d 1680 RD16HHF
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.

RD70HHF

Abstract: RD70HHF1 mosfet HF amplifier idq10
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD70HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,70W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.

744-766

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : LF 744766233 RoHS compliant SMD-HF-Entstördrossel WE-GF SMD-RF-Choke WE-GF DATUM / DATE : 2004-10-11 A Mechanische Abmessungen / dimensions :

RD100HHF1

Abstract: TRANSISTOR D 1765 304 fet transistor TRANSISTOR D 1765 720 100w RD100HHF1 hf amplifier 100w hf power transistor mosfet mosfet HF amplifier 68 0154 rf amplifier 100w
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.