HEXFET POWER MOSFET SMD2 Search Results

IRHNA7360SE

Contextual Info: PD - 91398A IRHNA7360SE 400V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID 24A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET

IRHNA7264SE

Abstract: RAD-HARD
Contextual Info: PD - 91432C IRHNA7264SE 250V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7264SE Radiation Level RDS(on) 100K Rads (Si) 0.11Ω ID 34A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET

IRHNA7460SE

Abstract: HEXFET Power MOSFET SMD2
Contextual Info: PD - 91399B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7460SE 500V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET

IRHNA7360SE

Contextual Info: PD-91398B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7360SE 400V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID 24A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET

IRHNA7460SE

Contextual Info: PD - 91399A IRHNA7460SE 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET

Contextual Info: PD - 91432C IRHNA7264SE 250V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7264SE Radiation Level RDS(on) 100K Rads (Si) 0.11Ω ID 34A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET

Contextual Info: PD - 91399B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7460SE 500V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET

Contextual Info: PD-91398B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7360SE 400V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID 24A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET

Contextual Info: PD - 94337B HEXFET POWER MOSFET SURFACE MOUNT SMD-2 IRF7NA2907 75V, N-CHANNEL Product Summary Part Number BVDSS IRF7NA2907 75V RDS(on) ID 0.0045Ω 75A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

Contextual Info: PD - 94337A HEXFET POWER MOSFET SURFACE MOUNT SMD-2 IRF7NA2907 75V, N-CHANNEL Product Summary Part Number BVDSS IRF7NA2907 75V RDS(on) ID 0.0045Ω 75A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

IRF7NA2907

Contextual Info: PD - 94337B HEXFET POWER MOSFET SURFACE MOUNT SMD-2 IRF7NA2907 75V, N-CHANNEL Product Summary Part Number BVDSS IRF7NA2907 75V RDS(on) ID 0.0045Ω 75A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

IRF igbt gate driver

Abstract: MOSFET IRF 630 SMD-247 st smd diode marking code ET MOSFET IRF 630 Datasheet MOSFET IRF 570 MOSFET IRF 603
Contextual Info: PD - 94351 IRFP17N50LS SMPS MOSFET HEXFET Power MOSFET Applications l l l l Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching ZVS and High Frequency Circuit PWM Inverters l VDSS RDS(on) typ. Trr ID 500V 0.28Ω 170ns

smd 39a diode zener

Abstract: TH 2190 mosfet 39A zener diode th 2190 TH 2190 mosfet isolated smd diode 39a P Channel Power MOSFET IRF TH 2190 Transistor AN-994 IRLBD59N04E
Contextual Info: PD -93910B IRLBD59N04E HEXFET Power MOSFET Integrated Temperature Sensing Diode Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fully Avalanche Rated Zener Gate Protected VDSS = 40V RDS on = 0.018Ω ID = 59A Description The IRLBD59N04E is a 40V, N-channel HEXFET®

TH 2190 mosfet

Abstract: smd 39a diode zener TH 2190 mosfet isolated AN-994 IRLBD59N04E SMD-220 G10 zener diode 39A zener diode
Contextual Info: PD -93910B IRLBD59N04E HEXFET Power MOSFET Integrated Temperature Sensing Diode Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fully Avalanche Rated Zener Gate Protected VDSS = 40V RDS on = 0.018Ω ID = 59A Description The IRLBD59N04E is a 40V, N-channel HEXFET®

SMD 51A

Abstract: IRHNA3160 IRHNA4160 IRHNA7160 IRHNA8160 JANSR2N7432U
Contextual Info: PD - 91396C IRHNA7160 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/664 RAD-Hard HEXFET MOSFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNA7160 100K Rads (Si) IRHNA3160 300K Rads (Si) RDS(on)

marking code V6 33 surface mount diode

Abstract: SMD Diode V6 marking code KOREAN SMD MARKING CODE marking v6 -98 diode irfs17n20d marking code V6 surface mount diode V6 19 marking code diode
Contextual Info: PD- 95325 IRFB17N20DPbF IRFS17N20DPbF IRFSL17N20DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l l Lead-Free Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

pj 68 SMD diode

Abstract: 1RF9620 IRF9620 DIODE marking CJSS ScansUX102 SMD 1DV 19
Contextual Info: International PôkIRectifier PD-9.351 F IRF9620 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements ^ dss - -200V ^DS on = 1 lD = -3.5A Description DATA SHEETS The HEXFET technology is the key to International Rectifier’s advanced line

1rf9610

Abstract: IRF9610 IRF9610S ScansUX102 afra marking
Contextual Info: PD-9.350F International l»51 Rectifier IRF9610 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements V Ds s = - 2 0 0 V ^DS on = 3 - 0 0 ln = -1.8A Description DATA SHEETS The HEXFET technology is the key to International Rectifier’s advanced line

irf5n5210sc

Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
Contextual Info: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)

IRHNA3064

Abstract: IRHNA4064 IRHNA7064 IRHNA8064 JANSR2N7431U
Contextual Info: PD - 91416B IRHNA7064 JANSR2N7431U 60V, N-CHANNEL REF: MIL-PRF-19500/664 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7064 IRHNA3064 IRHNA4064 IRHNA8064 Radiation Level 100K Rads (Si)

ak 957 1542 d

Abstract: AN-994 IRF530S IRFZ46NS SMD-220 DIODE smd marking Ak
Contextual Info: Previous Datasheet Index Next Data Sheet PD - _ IRFZ46NS PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.020Ω ID = 46A

AN-994

Abstract: IRF1310S SMD-220 smd marking LD
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1221 IRF1310S HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature VDSS = 100V

AN-994

Abstract: IRF530S IRFZ44NS SMD-220 marking code EA SMD MOSFET smd diode code A
Contextual Info: Previous Datasheet Index Next Data Sheet PD - _ IRFZ44NS PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.024Ω ID = 41A

IRHNA9064

Abstract: IRHNA93064 JANSF2N7424U JANSR2N7424U
Contextual Info: PD - 91447B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA9064 JANSR2N7424U 60V, P-CHANNEL REF: MIL-PRF-19500/655 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNA9064 100K Rads (Si) IRHNA93064 300K Rads (Si)