HER 103 DIODE Search Results

Contextual Info: HER101 thru HER108 High Efficiency Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A Feature & Dimensions * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 Ideally suited for use in very high frequency switching power supplies, inverters and as free wheeling diodes

HER 107 diode

Abstract: HER101 HER108
Contextual Info: HER101 - HER108 HIGH EFFICIENT RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency

Contextual Info: TH09/2479 TH97/2478 www.eicsemi.com HER101 - HER108 IATF 0113686 SGS TH07/1033 HIGH EFFICIENT RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current

HER101

Abstract: HER108
Contextual Info: HER101 - HER108 HIGH EFFICIENT RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency

Contextual Info: HER101 - HER108 HIGH EFFICIENT RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency

Contextual Info: HER101 – HER108 1.0A ULTRAFAST DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Surge Current Capability High Reliability Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

Contextual Info: HER101 – HER108 WTE POWER SEMICONDUCTORS Pb 1.0A ULTRAFAST DIODE Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data        C Case: DO-41, Molded Plastic

HER 107 diode

Abstract: DIODE HER108 HER 103 diode Diode HER 107 HER101 HER101-T3 HER101-TB HER104 HER105 HER108
Contextual Info: HER101 – HER108 WTE POWER SEMICONDUCTORS Pb 1.0A ULTRAFAST DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-41, Molded Plastic

HER104

Abstract: HER101 HER105 HER106M VR50 HER101M HER104-HER105
Contextual Info: MOSPEC HER101 Thru HER105 Switchmode Power Rectifiers ULTRAFAST RECTIFIERS Designed for use in switching power supplies. inverters and as free wheeling diodes. These state-of-the-art devices have the following features: 1.0 AMPERES 50-400 VOLTS ＊High Surge Capacity

mospec 2sa

Abstract: HER101 HER105
Contextual Info: Bk MOSPEC HER101 thru HER105 Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS . Designed for use in switching power supplies, inverters and as free wheeling diodes. These state-of-the-art devices have the following features: * * * * * * * * 1.0 AMPERES

HER101

Abstract: HER108
Contextual Info: LESHAN RADIO COMPANY, LTD. HER101 thru HER108 1.Feature & Dimensions High Efficiency Rectifiers * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 Reverse Voltage 50 to 1000V Forward Current 1.0A * Ideally suited for use in very high frequency switching

Contextual Info: LESHAN RADIO COMPANY, LTD. HER101 thru HER108 Feature & Dimensions High Efficiency Rectifiers * Plastic package has Underwriters Laboratories Reverse Voltage 50 to 1000V Forward Current 1.0A * * * * * * * Flammability Classification 94V-0 Ideally suited for use in very high frequency switching

A-405

Abstract: HER101 HER108
Contextual Info: LESHAN RADIO COMPANY, LTD. HER101 thru HER108 1.Feature & Dimensions High Efficiency Rectifiers * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 Reverse Voltage 50 to 1000V Forward Current 1.0A * Ideally suited for use in very high frequency switching

Contextual Info: IDH10S120 thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 1200 600 V • No reverse recovery / No forward recovery QC 3.2 36 nC • Temperature independent switching behavior IF; TC< 130 °C

Contextual Info: IDH08S120 thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 1200 600 V • No reverse recovery / No forward recovery QC 3.2 27 nC • Temperature independent switching behavior IF; TC< 130 °C

Contextual Info: IDH08S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 19 nC IF 8 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior

D12G60

Abstract: diode smd ED 17
Contextual Info: IDD12SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 19 nC • Temperature independent switching behavior IF; TC< 130 °C

16N60G

Abstract: HER 107 diode HER 103 diode FMW16N60G 16N60
Contextual Info: DATE CHECKED Jun.-01-'05 CHECKED Jun.-01-'05 NAME DWG.NO. Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any

Contextual Info: HER101 - HER106 1.0A HIGH EFFICIENCY RECTIFIER Features • · · · · Low Leakage Low Forward Voltage Drop High Current Capability High Speed Switching Plastic Material: UL Flammability Classification Rating 94V-0 B A A C D Mechanical Data · · · · ·

HER101

Abstract: HER105 HER106 UF1001 UF1007
Contextual Info: HER101 - HER106 1.0A HIGH EFFICIENCY RECTIFIER NOT RECOMMENDED FOR NEW DESIGNS, USE UF1001 - UF1007 Features • · · · · Low Leakage Low Forward Voltage Drop High Current Capability High Speed Switching Plastic Material: UL Flammability Classification Rating 94V-0

D10S60C

Contextual Info: IDH10S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior

Contextual Info: BSS169 SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode VDS 100 V RDS on ,max 12 Ω 0.09 A IDSS,min • dv /dt rated • Available with V GS(th) indicator on reel • Pb-free lead-plating; RoHS compliant PG-SOT-23

HER101

Abstract: HER105 HER106 UF1001 UF1007 DS25001
Contextual Info: HER101 - HER106 1.0A HIGH EFFICIENCY RECTIFIER DISCONTINUED, NOT RECOMMENDED FOR NEW DESIGNS, USE UF1001 - UF1007 Features • · · · · Low Leakage Low Forward Voltage Drop High Current Capability High Speed Switching Plastic Material: UL Flammability Classification Rating 94V-0

Contextual Info: IDH05S120 thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 1200 600 V • No reverse recovery / No forward recovery QC 3.2 18 nC • Temperature independent switching behavior IF; TC< 130 °C