HER 103 DIODE Search Results

Contextual Info: HER101 thru HER108 High Efficiency Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A Feature & Dimensions * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 Ideally suited for use in very high frequency switching power supplies, inverters and as free wheeling diodes

HER 107 diode

Abstract: HER101 HER108
Contextual Info: HER101 - HER108 HIGH EFFICIENT RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency

HER101

Abstract: HER108
Contextual Info: HER101 - HER108 HIGH EFFICIENT RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency

Contextual Info: HER101 – HER108 1.0A ULTRAFAST DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Surge Current Capability High Reliability Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

Contextual Info: HER101 – HER108 WTE POWER SEMICONDUCTORS Pb 1.0A ULTRAFAST DIODE Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data        C Case: DO-41, Molded Plastic

HER 107 diode

Abstract: DIODE HER108 HER 103 diode Diode HER 107 HER101 HER101-T3 HER101-TB HER104 HER105 HER108
Contextual Info: HER101 – HER108 WTE POWER SEMICONDUCTORS Pb 1.0A ULTRAFAST DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-41, Molded Plastic

HER104

Abstract: HER101 HER105 HER106M VR50 HER101M HER104-HER105
Contextual Info: MOSPEC HER101 Thru HER105 Switchmode Power Rectifiers ULTRAFAST RECTIFIERS Designed for use in switching power supplies. inverters and as free wheeling diodes. These state-of-the-art devices have the following features: 1.0 AMPERES 50-400 VOLTS ＊High Surge Capacity

mospec 2sa

Abstract: HER101 HER105
Contextual Info: Bk MOSPEC HER101 thru HER105 Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS . Designed for use in switching power supplies, inverters and as free wheeling diodes. These state-of-the-art devices have the following features: * * * * * * * * 1.0 AMPERES

HER101

Abstract: HER108
Contextual Info: LESHAN RADIO COMPANY, LTD. HER101 thru HER108 1.Feature & Dimensions High Efficiency Rectifiers * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 Reverse Voltage 50 to 1000V Forward Current 1.0A * Ideally suited for use in very high frequency switching

Contextual Info: LESHAN RADIO COMPANY, LTD. HER101 thru HER108 Feature & Dimensions High Efficiency Rectifiers * Plastic package has Underwriters Laboratories Reverse Voltage 50 to 1000V Forward Current 1.0A * * * * * * * Flammability Classification 94V-0 Ideally suited for use in very high frequency switching

A-405

Abstract: HER101 HER108
Contextual Info: LESHAN RADIO COMPANY, LTD. HER101 thru HER108 1.Feature & Dimensions High Efficiency Rectifiers * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 Reverse Voltage 50 to 1000V Forward Current 1.0A * Ideally suited for use in very high frequency switching

Contextual Info: IDH10S120 thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 1200 600 V • No reverse recovery / No forward recovery QC 3.2 36 nC • Temperature independent switching behavior IF; TC< 130 °C

21n60G

Abstract: FMW21N60G 21N60 HER 103 diode
Contextual Info: DATE CHECKED Sep.-27-'04 CHECKED Sep.-27-'04 NAME DWG.NO. Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any

D12G60

Abstract: diode smd ED 17
Contextual Info: IDD12SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 19 nC • Temperature independent switching behavior IF; TC< 130 °C

Contextual Info: HER101 - HER106 1.0A HIGH EFFICIENCY RECTIFIER Features • · · · · Low Leakage Low Forward Voltage Drop High Current Capability High Speed Switching Plastic Material: UL Flammability Classification Rating 94V-0 B A A C D Mechanical Data · · · · ·

HER101

Abstract: HER105 HER106 UF1001 UF1007
Contextual Info: HER101 - HER106 1.0A HIGH EFFICIENCY RECTIFIER NOT RECOMMENDED FOR NEW DESIGNS, USE UF1001 - UF1007 Features • · · · · Low Leakage Low Forward Voltage Drop High Current Capability High Speed Switching Plastic Material: UL Flammability Classification Rating 94V-0

HER101

Abstract: HER105 HER106 UF1001 UF1007 DS25001
Contextual Info: HER101 - HER106 1.0A HIGH EFFICIENCY RECTIFIER DISCONTINUED, NOT RECOMMENDED FOR NEW DESIGNS, USE UF1001 - UF1007 Features • · · · · Low Leakage Low Forward Voltage Drop High Current Capability High Speed Switching Plastic Material: UL Flammability Classification Rating 94V-0

10N90

Contextual Info: DATE CHECKED Jul.-29-'05 CHECKED Jul.-29-'05 NAME DWG.NO. Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any

07N90G

Abstract: 07N90 fmw07n90g
Contextual Info: DATE CHECKED Jul.-29-'05 CHECKED Jul.-29-'05 NAME DWG.NO. Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any

Contextual Info: BSC0924NDI Dual N-Channel OptiMOS MOSFET Product Summary Features • Dual N-channel OptiMOS™ MOSFET Q1 Q2 30 30 V VGS=10 V 5 3.7 mΩ VGS=4.5 V 7 5.2 40 40 VDS • Integrated monolithic Schottky-like diode RDS on ,max • Optimized for high performance Buck converter

Contextual Info: BSS138W SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Enhancement mode V DS 60 V R DS on ,max 3.5 Ω ID 0.28 A • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant PG-SOT-323 • Qualified according to AEC Q101

Contextual Info: SIEMENS CMPNTSt OPTO 44E D SIEMENS • â23b32b DGGLtcîM4 4 M S IE X LS K380 YELLOW LY K380 GREEN LG K380 HIGH EFFICIENCY RED T1 ARGUS LED LAMP *r- m -23 Package Dimensions in Inches mm 8w f*c *ro tlM è K S Ì sam» .142(3$} .126(3.2). -“ i01) «uo«)\

prior H101

Abstract: HDSP-A801 equivalent DPA801
Contextual Info: Whpì H E W LE TT m L'Hâ PACKARD Low Current Seven Segment Displays Technical D ata Features D escription • • • • These low current seven segment displays are designed for applications requiring low power consumption. They are tested and selected for their

Contextual Info: 2N7002 OptiMOS Small-Signal-Transistor Product Summary Features 60 V VGS=10 V 3 Ω VGS=4.5 V 4 VDS • N-channel RDS on ,max • Enhancement mode • Logic level • Avalanche rated 0.3 ID A • fast switching PG-SOT23 • Pb-free lead-plating; RoHS compliant