HER 103 DIODE Search Results

Contextual Info: HER101 thru HER108 High Efficiency Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A Feature & Dimensions * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 Ideally suited for use in very high frequency switching power supplies, inverters and as free wheeling diodes

Contextual Info: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com HER501 - HER508 HIGH EFFICIENT RECTIFIER DIODES

Contextual Info: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com HER251 - HER258 HIGH EFFICIENT RECTIFIER DIODES

HER 107 diode

Abstract: HER101 HER108
Contextual Info: HER101 - HER108 HIGH EFFICIENT RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency

Contextual Info: HER101 - HER108 HIGH EFFICIENT RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency

Contextual Info: TH09/2479 TH97/2478 www.eicsemi.com HER101 - HER108 IATF 0113686 SGS TH07/1033 HIGH EFFICIENT RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current

HER101

Abstract: HER108
Contextual Info: HER101 - HER108 HIGH EFFICIENT RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency

Contextual Info: HER101 - HER108 HIGH EFFICIENT RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency

Contextual Info: HER101 – HER108 1.0A ULTRAFAST DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Surge Current Capability High Reliability Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

Contextual Info: HER101 – HER108 WTE POWER SEMICONDUCTORS Pb 1.0A ULTRAFAST DIODE Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data        C Case: DO-41, Molded Plastic

HER 107 diode

Abstract: DIODE HER108 HER 103 diode Diode HER 107 HER101 HER101-T3 HER101-TB HER104 HER105 HER108
Contextual Info: HER101 – HER108 WTE POWER SEMICONDUCTORS Pb 1.0A ULTRAFAST DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-41, Molded Plastic

HER104

Abstract: HER101 HER105 HER106M VR50 HER101M HER104-HER105
Contextual Info: MOSPEC HER101 Thru HER105 Switchmode Power Rectifiers ULTRAFAST RECTIFIERS Designed for use in switching power supplies. inverters and as free wheeling diodes. These state-of-the-art devices have the following features: 1.0 AMPERES 50-400 VOLTS ＊High Surge Capacity

mospec 2sa

Abstract: HER101 HER105
Contextual Info: Bk MOSPEC HER101 thru HER105 Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS . Designed for use in switching power supplies, inverters and as free wheeling diodes. These state-of-the-art devices have the following features: * * * * * * * * 1.0 AMPERES

Contextual Info: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com HER101 - HER108 HIGH EFFICIENT

Contextual Info: LESHAN RADIO COMPANY, LTD. HER101 thru HER108 Feature & Dimensions High Efficiency Rectifiers * Plastic package has Underwriters Laboratories Reverse Voltage 50 to 1000V Forward Current 1.0A * * * * * * * Flammability Classification 94V-0 Ideally suited for use in very high frequency switching

Contextual Info: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com HER301 - HER308 HIGH EFFICIENT

Contextual Info: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com HER151 - HER158 HIGH EFFICIENT

A-405

Abstract: HER101 HER108
Contextual Info: LESHAN RADIO COMPANY, LTD. HER101 thru HER108 1.Feature & Dimensions High Efficiency Rectifiers * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 Reverse Voltage 50 to 1000V Forward Current 1.0A * Ideally suited for use in very high frequency switching

Contextual Info: IDH15S120 thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 1200 600 V • No reverse recovery / No forward recovery QC 3.2 54 nC • Temperature independent switching behavior IF; TC< 130 °C

Contextual Info: IDH10S120 thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 1200 600 V • No reverse recovery / No forward recovery QC 3.2 36 nC • Temperature independent switching behavior IF; TC< 130 °C

21n60G

Abstract: FMW21N60G 21N60 HER 103 diode
Contextual Info: DATE CHECKED Sep.-27-'04 CHECKED Sep.-27-'04 NAME DWG.NO. Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any

Contextual Info: IDH08S120 thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 1200 600 V • No reverse recovery / No forward recovery QC 3.2 27 nC • Temperature independent switching behavior IF; TC< 130 °C

Contextual Info: IDH08S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 19 nC IF 8 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior

D12G60

Abstract: diode smd ED 17
Contextual Info: IDD12SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 19 nC • Temperature independent switching behavior IF; TC< 130 °C