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    HEMT MARKING P Search Results

    HEMT MARKING P Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CLF1G0035-100P
    Rochester Electronics LLC CLF1G0035-100 - 100W Broadband RF power GaN HEMT PDF Buy
    MG80C186-10/BZA
    Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) PDF Buy
    ICM7555MTV/883
    Rochester Electronics LLC ICM7555MTV/883 - Dual marked (5962-8950303GA) PDF Buy
    MQ80C186-10/BYA
    Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) PDF Buy
    54121/BCA
    Rochester Electronics LLC 54121 - Multivibrator, Monostable - Dual marked (M38510/01201BCA) PDF Buy

    HEMT MARKING P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    GS 9521

    Abstract: CFH120 CFH120-08 CFH120-10 1507 0745 HEMT marking K
    Contextual Info: CFH120 GaAs HEMT Preliminary Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers


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    CFH120 CFH120-08 CFH120-10 GS 9521 CFH120 CFH120-08 CFH120-10 1507 0745 HEMT marking K PDF

    MAX 8985

    Abstract: pseudomorphic HEMT ta 7176 datasheet 8772 P CFH120 CFH120-08 CFH120-10
    Contextual Info: CFH120 GaAs HEMT Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers


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    CFH120 CFH120-08 Q62705-K0603 CFH120-10 Q62705-K0604 MAX 8985 pseudomorphic HEMT ta 7176 datasheet 8772 P CFH120 CFH120-08 CFH120-10 PDF

    CFY77-10

    Abstract: HEMT HEMT marking K 036 906 051 VS005553
    Contextual Info: SIEM ENS AIGaAs / InGaAs HEMT CFY 77 Datasheet Features * Very low noise *Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters VS005553 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type


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    VS005553 CFY77-08 CFY77-10 Q62702-F1549 Q62702-F1559 CFY77-10 HEMT HEMT marking K 036 906 051 VS005553 PDF

    CFY 18

    Abstract: HEMT marking D HEMT marking K VS005553
    Contextual Info: SIEMENS AIGaAs / InGaAs HEMT CFY77 Datasheet Features * Very low noise •V ery high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters 4 * 2 VS005553 ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    CFY77 VS005553 CFY77-08 CFY77-10 Q62702-F1549 Q62702-F1559 CFY 18 HEMT marking D HEMT marking K VS005553 PDF

    6943-3

    Contextual Info: P - HEMT Transistor CFH800 Preliminary Datasheet Features ? Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications


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    OT343 CFH800 Rn/50 6943-3 PDF

    transistor Zo 105

    Abstract: 6943-3 55086 HEMT marking P 05973
    Contextual Info: P - HEMT Transistor CFH800 Preliminary Datasheet Features • • • • Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz


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    OT343 CFH800 OT343 D-130 Rn/50 transistor Zo 105 6943-3 55086 HEMT marking P 05973 PDF

    transistor zo 107

    Abstract: 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor
    Contextual Info: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features ? Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz


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    OT343 CFH400 Q62702-G0116 volt-69 Rn/50 transistor zo 107 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor PDF

    transistor zo 107

    Abstract: 9412 transistor transistor zo 109 51687 72741 TRANSISTOR zo 109 ma CFH400 9412 opt i 72741 Hemt transistor
    Contextual Info: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features • • • • • Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz


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    OT343 CFH400 Q62702-G0116 OT343 vol51 Rn/50 transistor zo 107 9412 transistor transistor zo 109 51687 72741 TRANSISTOR zo 109 ma CFH400 9412 opt i 72741 Hemt transistor PDF

    AT1504

    Abstract: AT1504R SSOP16 surface id4 d
    Contextual Info: AT1504 Preliminary Product Information FET BIAS CONTROLLER Features ˙Provides bias for GaAs and HEMT FETs ˙Drives up to four FETs ˙Dynamic FET protection ˙Drain current set by external resistor ˙Regulated negative rail generator requires only 2 external capacitors


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    AT1504 AT1504 16-pin AT1504R SSOP16 surface id4 d PDF

    FET bias

    Abstract: AT1506 AT1506R SSOP20
    Contextual Info: AT1506 Preliminary Product Information FET BIAS CONTROLLER Features ˙Provides bias for GaAs and HEMT FETs ˙Drives up to four FETs ˙Dynamic FET protection ˙Drain current set by external resistor ˙Regulated negative rail generator requires only 2 external capacitors


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    AT1506 AT1506 16-pin FET bias AT1506R SSOP20 PDF

    k0604

    Abstract: MAX 8985 zo 607 p 408 8772 P pseudomorphic HEMT GSO05553 S221 Q62705-K0603 ZO 607 MA 135
    Contextual Info: GaAs HEMT CFH 120 Preliminary Data Sheet • • • • • Low noise pseudomorphic HEMT with high associated gain Low cost plastic package For low noise front end amplifiers up to 20 GHz For DBS down-converters Fully RF tested at 12 GHz 3 2 4 1 ESD: Electrostatic discharge sensitive device,


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    Q62705-K0603 Q62705-K0604 GSO05553 k0604 MAX 8985 zo 607 p 408 8772 P pseudomorphic HEMT GSO05553 S221 Q62705-K0603 ZO 607 MA 135 PDF

    HEMT marking P

    Contextual Info: S IE M E N S CFY66 H/Re/K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor • Conventional AIGaAs/GaAs HEMT For new design we recommend to use our pseudo-morphic HEMT CFY67 • For professional super low-noise amplifiers •


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    CFY66 CFY67) CFY66-08 CFY66-08P CFY66-10 CFY66-10P CFY66-nnl QS9000 HEMT marking P PDF

    HEMT Amplifier

    Abstract: amplifier TRANSISTOR 12 GHZ MMIC POWER AMPLIFIER hemt "Marking 12" mmic mmic "Marking 12" marking hpa GaAs 12 GHZ gain 2.4 ghZ rf transistor
    Contextual Info: 24 - 27 GHz GaAs High Power Amplifier MMIC 24 - 27 GHz HPA Preliminary Data Sheet • Two-Stage Monolithic Microwave Integrated Circuit MMIC HEMT Amplifier • Input/Output matched to 50 Ω • Frequency range: 24 GHz to 27 GHz • Gain > 12 dB • P–1dB > 27 dBm


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    EHT09206 HEMT Amplifier amplifier TRANSISTOR 12 GHZ MMIC POWER AMPLIFIER hemt "Marking 12" mmic mmic "Marking 12" marking hpa GaAs 12 GHZ gain 2.4 ghZ rf transistor PDF

    transistor "micro-x" "marking" 3

    Abstract: micro-X ceramic Package hemt micro-X ceramic Package
    Contextual Info: RF2048 GENERAL PURPOSE AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • High Reliability Applications • Driver Stage for Power Amplifiers


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    RF2048 RF2048 8000MHz. transistor "micro-x" "marking" 3 micro-X ceramic Package hemt micro-X ceramic Package PDF

    Z050

    Abstract: RF Driver HEMT 86210 but 70 ids 2560
    Contextual Info: ODRKGF1921-05 Electronic Components KGF1921 Issue Date:Jan 20, 2005 Preliminary RF Driver HEMT GENERAL DESCRIPTION The KGF1921, housed in a SOT-89 type plastic-mold package, is a discrete RF power HEMT that features high efficiency, high output power and low current operation. The KGF1921 specifications are guaranteed to a fixed


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    KGF1921 ODRKGF1921-05 KGF1921, OT-89 KGF1921 27dBm) 05GHz 27dBm Z050 RF Driver HEMT 86210 but 70 ids 2560 PDF

    micro-x mhz ghz microwave

    Abstract: Micro-X Marking 865
    Contextual Info: CFY67 HiRel K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor  Pseudo-morphic AlGaAs/InGaAs/GaAs HEMT  For professional super low-noise amplifiers  For frequencies from 500 MHz to > 20 GHz  Hermetically sealed microwave package


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    CFY67 CFY67-08 CFY67-08P CFY67-10 CFY67-10P CFY67-nnl: micro-x mhz ghz microwave Micro-X Marking 865 PDF

    K1924

    Abstract: K-192 Z050
    Contextual Info: ODRKGF1924-07 Electronic Components KGF1924 Issue Date:May 20, 2005 RF Driver HEMT GENERAL DESCRIPTION The KGF1924, housed in a ceramic package with integrated heat sink, is a discrete RF power HEMT that features high efficiency, high output power and low current operation. The KGF1924 specifications are guaranteed to


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    KGF1924 ODRKGF1924-07 KGF1924, KGF1924 K1924 K-192 Z050 PDF

    MG1007-42

    Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
    Contextual Info: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are


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    MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30 PDF

    MSC 5010

    Abstract: Microwave Semiconductors MIL883 leak
    Contextual Info: SIEMENS 1 HiRel Discrete and Microwave Semiconductors Preliminary Remarks This paragraph gives an overview on the HiRel Discrete and Microwave Semiconductors available from Siemens. For detailed descriptions, screening procedures and quality specifications as well as full data sheets, please refer to our “HiRel Discrete and


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    PDF

    power one pmp 3.24

    Abstract: MARKING N6 RFMD MMIC N6 MARKING RFMD amplifier marking n6 MMIC Amplifier marking D MMIC Amplifier Micro-X marking D 10GHZ GAAS 10GHz mmic 100GHz BJT
    Contextual Info: NLB-310 NLB-310Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz RoHS Compliant & Pb-Free Product Package Style: Micro-X, 4-Pin, Plastic Features „ „ „ „ „ GND 4 Reliable, Low-Cost HBT Design 12.7dB Gain, +12.6dBm


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    NLB-310Cascadable 10GHz NLB-310 NLB-310 DS060412 power one pmp 3.24 MARKING N6 RFMD MMIC N6 MARKING RFMD amplifier marking n6 MMIC Amplifier marking D MMIC Amplifier Micro-X marking D 10GHZ GAAS 10GHz mmic 100GHz BJT PDF

    Micro-X Marking 865

    Contextual Info: S IE M E N S CFY67 HiRel K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor • Pseudo-morphic AIGaAs/lnGaAs/GaAs HEMT • For professional super low-noise amplifiers • For frequencies from 500 MHz to > 20 GHz • Hermetically sealed microwave package


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    CFY67 CFY67-06 CFY67-08 CFY67-08P CFY67-10 CFY67-10P CFY67-nnl: QS9000 Micro-X Marking 865 PDF

    RF2436

    Contextual Info: RF2436 TRANSMIT/RECEIVE SWITCH RoHS Compliant & Pb-Free Product Typical Applications • Cordless Phones • General Purpose RF Switching • Wireless Computer Peripherals • Commercial and Consumer Systems • Wireless Security Systems Product Description


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    RF2436 RF2436 28dBm 2500MHz. 100MHz-3000MHz, -30dBm, 900MHz-2500MHz, PDF

    ZNBG3118

    Abstract: diseqc* LNB POWER monoblock lnb twins lnb ZNBG3118JA16TC capacitor 100nf monoblock twin lnb stages capacitor 10nf monoblock hemt lnb
    Contextual Info: A Product Line of Diodes Incorporated ZNBG3118 LNA GaAs FET BIAS CONTROLLER WITH POLARIZATION AND BAND SELECT Summary The ZNBG3118 is a bias and control solution designed for Satellite Low Noise Blocks LNB’s . Providing three bias stages to power control and protect the GaAs or HEMT FET low noise amplifier’s (LNA’s). The ZNBG3118 integrates an accurate voltage


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    ZNBG3118 ZNBG3118 DS32049 diseqc* LNB POWER monoblock lnb twins lnb ZNBG3118JA16TC capacitor 100nf monoblock twin lnb stages capacitor 10nf monoblock hemt lnb PDF

    L239N

    Abstract: E146D K1924
    Contextual Info: ODRKGF1924-08 Electronic Components KGF1924 Issue Date:Jan 20, 2006 RF Driver HEMT GENERAL DESCRIPTION The KGF1924, housed in a ceramic package with integrated heat sink, is a discrete RF power HEMT that features high efficiency, high output power and low current operation. The KGF1924 specifications are guaranteed to


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    KGF1924 ODRKGF1924-08 KGF1924, KGF1924 L239N E146D K1924 PDF