GSO05553
Abstract: Q62702-G117 CFH77 HEMT marking P
Contextual Info: GaAs HEMT CFH 77 Target Data Sheet • • • • Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! MW-4 Type Marking Ordering Code
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GS 9521
Abstract: CFH120 CFH120-08 CFH120-10 1507 0745 HEMT marking K
Contextual Info: CFH120 GaAs HEMT Preliminary Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers
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cfh120cfh120-08cfh120-10gs 9521+21507 0745hemt marking k
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MAX 8985
Abstract: pseudomorphic HEMT ta 7176 datasheet 8772 P CFH120 CFH120-08 CFH120-10
Contextual Info: CFH120 GaAs HEMT Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers
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cfh120cfh120-08q62705-k0603cfh120-10+5q62705-k0604max 8985pseudomorphic hemtta 7176 datasheet8772 p
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CFY77-10
Abstract: HEMT HEMT marking K 036 906 051 VS005553
Contextual Info: SIEM ENS AIGaAs / InGaAs HEMT CFY 77 Datasheet Features * Very low noise *Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters VS005553 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type
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vs005553cfy77-08cfy77-10q62702-f1549+4q62702-f1559hemthemt marking k036 906 051
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CFY 18
Abstract: HEMT marking D HEMT marking K VS005553
Contextual Info: SIEMENS AIGaAs / InGaAs HEMT CFY77 Datasheet Features * Very low noise •V ery high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters 4 * 2 VS005553 ESD: Electrostatic discharge sensitive device, observe handling precautions!
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cfy77vs005553cfy77-08cfy77-10+5q62702-f1549q62702-f1559cfy 18hemt marking dhemt marking k
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M 6965
Abstract: HEMT marking D CFH400T 72482 HEMT marking P 74923 HEMT marking K
Contextual Info: CFH400T P - HEMT Target Datasheet Features Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz F = 0.6 dB; Ga = 15.5 dB @ 3V; 10mA;
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cfh400tm 6965hemt marking d72482+3hemt marking p74923hemt marking k
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cfy siemens
Abstract: CFY77-10 cfy77 HEMT marking P 059 906 051 CFY77-08 Q62702-F1549 Q62702-F1559 cfy 14 siemens HEMT marking K
Contextual Info: AlGaAs / InGaAs HEMT CFY 77 Datasheet Features * Very low noise * Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters
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cfy77-08q62702-f1549cfy77-10q62702-f1559+6cfy siemenscfy77hemt marking p059 906 051cfy 14 siemenshemt marking k
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6943-3
Contextual Info: P - HEMT Transistor CFH800 Preliminary Datasheet Features ? Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications
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transistor Zo 105
Abstract: 6943-3 55086 HEMT marking P 05973
Contextual Info: P - HEMT Transistor CFH800 Preliminary Datasheet Features • • • • Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz
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ot343cfh800d-130rn/50+5transistor zo 1056943-355086hemt marking p05973
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transistor zo 107
Abstract: 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor
Contextual Info: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features ? Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz
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ot343cfh400q62702-g0116volt-69+7rn/50transistor zo 107831 transistortransistor 933transistor 131-6transistor zo 109 mahemt transistor
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TGA2576-FL
Abstract: GaN hemt TGA2576
Contextual Info: TGA2576-FL 2.5 to 6 GHz GaN HEMT Power Amplifier Applications • • • • Communications Electronic Warfare Test Instrumentation EMC Amplifier Product Features • • • • • • Functional Block Diagram Frequency Range: 2.5 – 6 GHz Psat: 45.5 dBm @ Pin = 26 dBm
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transistor zo 107
Abstract: 9412 transistor transistor zo 109 51687 72741 TRANSISTOR zo 109 ma CFH400 9412 opt i 72741 Hemt transistor
Contextual Info: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features • • • • • Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz
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ot343cfh400q62702-g0116vol51+10rn/50transistor zo 1079412 transistortransistor zo 1095168772741transistor zo 109 ma9412 opti 72741hemt transistor
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k0604
Abstract: MAX 8985 zo 607 p 408 8772 P pseudomorphic HEMT GSO05553 S221 Q62705-K0603 ZO 607 MA 135
Contextual Info: GaAs HEMT CFH 120 Preliminary Data Sheet • • • • • Low noise pseudomorphic HEMT with high associated gain Low cost plastic package For low noise front end amplifiers up to 20 GHz For DBS down-converters Fully RF tested at 12 GHz 3 2 4 1 ESD: Electrostatic discharge sensitive device,
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q62705-k0603q62705-k0604gso05553k0604+6max 8985zo 607 p 4088772 ppseudomorphic hemts221zo 607 ma 135
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micro-X ceramic Package hemt
Abstract: GaAs Amplifier Micro-X Marking A Micro-X, 4-Pin, Ceramic GaAs MESFET amplifier MMIC Amplifier Micro-X marking MARKING HBT mmic marking A
Contextual Info: RF3816 Proposed CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 6GHz Typical Applications • Cellular Basestation Amplifiers and Transceivers • Narrow and Broadband Commercial and Military Radio Designs • Gain Stage or Driver Amplifiers for Linear and
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rf3816rf3816sbrf3816sr100-piece+8rf3816tr7rf3816pcba-410micro-x ceramic package hemtgaas amplifier micro-x marking amicro-x, 4-pin, ceramic gaas mesfet amplifiermmic amplifier micro-x markingmarking hbtmmic marking a
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micro-X ceramic Package hemt
Abstract: MMIC Amplifier Micro-X marking GaAs Amplifier Micro-X Marking A MMIC Amplifier Micro-X marking 4 pin MMIC Amplifier Micro-X RF3818 a1 mmic Micro-X, 4-Pin, Ceramic GaAs MESFET amplifier MARKING HBT 1233 amplifier
Contextual Info: RF3818 Proposed CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 3GHz Typical Applications • Cellular Basestation Amplifiers and • Narrow and Broadband Commercial and Transceivers Military Radio Designs • Gain Stage or Driver Amplifiers for Linear and
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rf3818rf3818sbrf3818sr100-piece+11rf3818tr7rf3818pcba-410micro-x ceramic package hemtmmic amplifier micro-x markinggaas amplifier micro-x marking ammic amplifier micro-x marking 4 pinmmic amplifier micro-xa1 mmicmicro-x, 4-pin, ceramic gaas mesfet amplifiermarking hbt1233 amplifier
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MMIC Amplifier Micro-X marking D
Abstract: d marking "Micro-X" Micro-X Marking E GaAs Amplifier Micro-X Marking N micro-X ceramic Package hemt D marking amplifier d marking Micro-X amplifier marking _1 MMIC Amplifier Micro-X marking N Micro-X Marking D
Contextual Info: RF3818 Proposed CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 3GHz Typical Applications • Cellular Basestation Amplifiers and • Narrow and Broadband Commercial and Transceivers Military Radio Designs • Gain Stage or Driver Amplifiers for Linear and
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rf3818rf3818sbrf3818sr100-piece+12rf3818tr7rf3818pcba-410mmic amplifier micro-x marking dd marking "micro-xmicro-x marking egaas amplifier micro-x marking nmicro-x ceramic package hemtd marking amplifierd marking micro-xamplifier marking _1mmic amplifier micro-x marking nmicro-x marking d
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HEMT Amplifier
Abstract: amplifier TRANSISTOR 12 GHZ MMIC POWER AMPLIFIER hemt "Marking 12" mmic mmic "Marking 12" marking hpa GaAs 12 GHZ gain 2.4 ghZ rf transistor
Contextual Info: 24 - 27 GHz GaAs High Power Amplifier MMIC 24 - 27 GHz HPA Preliminary Data Sheet • Two-Stage Monolithic Microwave Integrated Circuit MMIC HEMT Amplifier • Input/Output matched to 50 Ω • Frequency range: 24 GHz to 27 GHz • Gain > 12 dB • P–1dB > 27 dBm
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eht09206hemt amplifieramplifier transistor 12 ghzmmic power amplifier hemt+5marking 12" mmicmmic "marking 12marking hpagaas 12 ghz gain2.4 ghz rf transistor
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transistor "micro-x" "marking" 3
Abstract: micro-X ceramic Package hemt micro-X ceramic Package
Contextual Info: RF2048 GENERAL PURPOSE AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • High Reliability Applications • Driver Stage for Power Amplifiers
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rf20488000mhztransistor "micro-x" "marking" 3micro-x ceramic package hemt+1micro-x ceramic package
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K1924
Abstract: cw marking sot89 162190 RF Driver HEMT
Contextual Info: ODRKGF1924-06 Electronic Components KGF1924 Issue Date:Jan 20, 2005 RF Driver HEMT GENERAL DESCRIPTION The KGF1924, housed in a ceramic package with integrated heat sink, is a discrete RF power HEMT that features high efficiency, high output power and low current operation. The KGF1924 specifications are guaranteed to
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amplifier TRANSISTOR 12 GHZ
Abstract: amplifier TRANSISTOR 14 GHZ transistor amplifier 3 ghz
Contextual Info: 27 - 31 GHz GaAs High Power Amplifier MMIC 27 - 31 GHz HPA Preliminary Data Sheet • • • • • • • Two-Stage Monolithic Microwave Integrated Circuit MMIC HEMT Amplifier Input/Output matched to 50 Ω Frequency range: 27 GHz to 31 GHz Gain > 11 dB
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eht09219amplifier transistor 12 ghzamplifier transistor 14 ghztransistor amplifier 3 ghz |
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transistor "micro-x" "marking" 3
Abstract: micro-X ceramic Package hemt
Contextual Info: RF2048 GENERAL PURPOSE AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • High Reliability Applications • Driver Stage for Power Amplifiers
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rf20488000mhztransistor "micro-x" "marking" 3micro-x ceramic package hemt |
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RF LNA 10 GHz
Abstract: gaas Low Noise Amplifier amplifier TRANSISTOR 12 GHZ transistor 24 GHz RF TRANSISTOR 10 GHZ low noise 04 marking monolithic amplifier bond pull test
Contextual Info: 24 - 32 GHz GaAs Low Noise Amplifier MMIC 24 - 32 GHz LNA Preliminary Data Sheet • • • • • • Two-Stage Monolithic Microwave Integrated Circuit MMIC HEMT Amplifier (coplanar design) Input/Output matched to 50 Ω Frequency range: 24 GHz to 32 GHz
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eht09217rf lna 10 ghzgaas low noise amplifieramplifier transistor 12 ghz+4transistor 24 ghzrf transistor 10 ghz low noise04 marking monolithic amplifierbond pull test
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70GHz HEMT Amplifier
Contextual Info: NLB-300 RoHS Compliant & Pb-Free Product CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers
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Z050
Abstract: RF Driver HEMT 86210 but 70 ids 2560
Contextual Info: ODRKGF1921-05 Electronic Components KGF1921 Issue Date:Jan 20, 2005 Preliminary RF Driver HEMT GENERAL DESCRIPTION The KGF1921, housed in a SOT-89 type plastic-mold package, is a discrete RF power HEMT that features high efficiency, high output power and low current operation. The KGF1921 specifications are guaranteed to a fixed
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