HEMT MARKING D Search Results

GS 9521

Abstract: CFH120 CFH120-08 CFH120-10 1507 0745 HEMT marking K
Contextual Info: CFH120 GaAs HEMT Preliminary Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers

CFY77-10

Abstract: HEMT HEMT marking K 036 906 051 VS005553
Contextual Info: SIEM ENS AIGaAs / InGaAs HEMT CFY 77 Datasheet Features * Very low noise *Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters VS005553 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type

cfy siemens

Abstract: CFY77-10 cfy77 HEMT marking P 059 906 051 CFY77-08 Q62702-F1549 Q62702-F1559 cfy 14 siemens HEMT marking K
Contextual Info: AlGaAs / InGaAs HEMT CFY 77 Datasheet Features * Very low noise * Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters

6943-3

Contextual Info: P - HEMT Transistor CFH800 Preliminary Datasheet Features ? Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications

transistor Zo 105

Abstract: 6943-3 55086 HEMT marking P 05973
Contextual Info: P - HEMT Transistor CFH800 Preliminary Datasheet Features • • • • Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz

K1924

Abstract: cw marking sot89 162190 RF Driver HEMT
Contextual Info: ODRKGF1924-06 Electronic Components KGF1924 Issue Date:Jan 20, 2005 RF Driver HEMT GENERAL DESCRIPTION The KGF1924, housed in a ceramic package with integrated heat sink, is a discrete RF power HEMT that features high efficiency, high output power and low current operation. The KGF1924 specifications are guaranteed to

amplifier TRANSISTOR 12 GHZ

Abstract: amplifier TRANSISTOR 14 GHZ transistor amplifier 3 ghz
Contextual Info: 27 - 31 GHz GaAs High Power Amplifier MMIC 27 - 31 GHz HPA Preliminary Data Sheet • • • • • • • Two-Stage Monolithic Microwave Integrated Circuit MMIC HEMT Amplifier Input/Output matched to 50 Ω Frequency range: 27 GHz to 31 GHz Gain > 11 dB

RF LNA 10 GHz

Abstract: gaas Low Noise Amplifier amplifier TRANSISTOR 12 GHZ transistor 24 GHz RF TRANSISTOR 10 GHZ low noise 04 marking monolithic amplifier bond pull test
Contextual Info: 24 - 32 GHz GaAs Low Noise Amplifier MMIC 24 - 32 GHz LNA Preliminary Data Sheet • • • • • • Two-Stage Monolithic Microwave Integrated Circuit MMIC HEMT Amplifier (coplanar design) Input/Output matched to 50 Ω Frequency range: 24 GHz to 32 GHz

70GHz HEMT Amplifier

Contextual Info: NLB-300 RoHS Compliant & Pb-Free Product CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers

Z050

Abstract: RF Driver HEMT 86210 but 70 ids 2560
Contextual Info: ODRKGF1921-05 Electronic Components KGF1921 Issue Date:Jan 20, 2005 Preliminary RF Driver HEMT GENERAL DESCRIPTION The KGF1921, housed in a SOT-89 type plastic-mold package, is a discrete RF power HEMT that features high efficiency, high output power and low current operation. The KGF1921 specifications are guaranteed to a fixed

MSC 5010

Abstract: Microwave Semiconductors MIL883 leak
Contextual Info: SIEMENS 1 HiRel Discrete and Microwave Semiconductors Preliminary Remarks This paragraph gives an overview on the HiRel Discrete and Microwave Semiconductors available from Siemens. For detailed descriptions, screening procedures and quality specifications as well as full data sheets, please refer to our “HiRel Discrete and

KGF1922

Abstract: H1 SOT-89 amplifier 4824 8 pin
Contextual Info: ODRKGF1922-08 Electronic Components KGF1922 Issue Date:Jan 20, 2006 RF Driver HEMT GENERAL DESCRIPTION The KGF1922, housed in a SOT-89 type plastic-mold package, is a discrete RF power HEMT that features high efficiency, high output power and low current operation. The KGF1922 specifications are guaranteed to

AT1504

Abstract: AT1504R SSOP16 surface id4 d
Contextual Info: AT1504 Preliminary Product Information FET BIAS CONTROLLER Features ˙Provides bias for GaAs and HEMT FETs ˙Drives up to four FETs ˙Dynamic FET protection ˙Drain current set by external resistor ˙Regulated negative rail generator requires only 2 external capacitors

Contextual Info: RF5187 LOW POWER LINEAR AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • 2.14GHz UMTS Systems • PCS Communication Systems • Digital Communication Systems • Commercial and Consumer Systems Product Description The RF5187 is a highly-linear, low-power amplifier IC. It

Contextual Info: SGA-1163 Z SGA-1163(Z) DC to 6000MHz, Cascadable SiGe HBT MMIC Amplifier DC to 6000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER NOT FOR NEW DESIGNS Package: SOT-363 Product Description Features Gain & Return Loss vs. Frequency 16 InGaP HBT GAIN 12 GaAs pHEMT -10

1800mhz rf frequency power amplifier circuit

Abstract: RF2126 PCBA
Contextual Info: RF2126 HIGH POWER LINEAR AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • 2.5GHz ISM Band Applications • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery-Powered Equipment • PCS Communication Systems

Contextual Info: RF2047 Preliminary  * 1(5$/ 385326( $03/, ,(5 7\SLFDO $SSOLFDWLRQV • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • High Reliability Applications • Driver Stage for Power Amplifiers • Broadband Test Equipment

Contextual Info: SGA-1263 Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block SGA-1263(Z) Preliminary DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar

sga-2363 marking code

Abstract: MMIC SOT 363 marking CODE 82 sga-2363 Package Marking MMIC SOT 363 marking CODE 68 MMIC SOT 363 marking CODE 56 A23Z sot-363 sot 363 marking code CD RFmd marking sot 363 mmic sot 363 marking code 31
Contextual Info: SGA-2363 Z SGA-2363(Z) DC to 5000MHz, Cascadable SiGe HBT MMIC Amplifier DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-363 Product Description Features The SGA-2363 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and

rfmd model marking code

Abstract: marking C43 trace code marking SGC
Contextual Info: SGC-4363Z SGC-4363Z 50MHz to 4000MHz Active Bias Silicon Germanium Cascadable Gain Block 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free Package: SOT-363 Product Description Features RFMD’s SGC-4363Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The

SGA-3363

Abstract: RFmd marking sot 363 A33Z MARKING SGA-4563Z trace code marking RFMD SGA-2263
Contextual Info: SGA-3363 Z SGA-3363(Z) DC to 5500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-363 Product Description Features The SGA-3363 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and

Contextual Info: SAMP-7710Z SAMP-7710Z DC to 3500MHz, Cascadable SiGe HBT MMIC Amplifier DC to 3500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-363 Product Description Features The SAMP-7710Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and

RF5187

Abstract: RF5187PCBA-41X
Contextual Info: RF5187 LOW POWER LINEAR AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • 2.14GHz UMTS Systems • PCS Communication Systems • Digital Communication Systems • Commercial and Consumer Systems Product Description The RF5187 is a highly-linear, low-power amplifier IC. It

a44z

Abstract: SGA-4463Z SGA-4463
Contextual Info: SGA-4463 Z SGA-4463(Z) DC to 3500MHz, Cascadable SiGe HBT MMIC Amplifier DC to 3500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-363 Product Description Features The SGA-4463 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and