HE8811 2008 Search Results

HE8811 2008 Result Highlights (4)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TPN12008QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 26 A, 0.0123 Ohm@10V, TSON Advance	Datasheet
TPA2008D2PWP		Texas Instruments	3-W Stereo Class-D Audio Amplifier with Volume Control (TPA2008) 24-HTSSOP -40 to 85
TPS62008DGSR		Texas Instruments	1.9-V Output, 600-mA, 95% Efficient Step-Down Converter in MSOP-10 10-VSSOP -40 to 85
TSC2008IRGVT		Texas Instruments	Nano-Power Touch Screen Controller with SPI 16-VQFN -40 to 85

HE8811 2008 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: HE8811 ODE-208-051A Z Rev.1 Feb. 01, 2008 GaAlAs Infrared Emitting Diode Description The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments and infrared-beam	Original	HE8811 ODE-208-051A HE8811 HE8811:	PDF
HE8811 2008 Abstract: HE8811 Contextual Info: HE8811 ODE2062-00 M Rev.0 Aug. 01, 2008 GaAlAs Infrared Emitting Diode Description The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments and infrared-beam	Original	HE8811 HE8811 ODE2062-00 HE8811: HE8811 2008	PDF
laser diode 940 nM 200mW Abstract: LD5033 80km* opnext ps7055 LE7062 laser DFB chip 1310nm 2.5G LB7962 10G APD chip HL6530MG Photodiode, 1550nm, butterfly package Contextual Info: opnext 2005 / 2006 HITACHI OPTODEVICES Powered by opnext Powered by HITACHI Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, Opnext offers unique leading-edge optodevices in such areas as fiber optic communications, optical storage, and measuring instruments and encoders. Constant refinement of established technologies offer cutting-edge solutions to a wide variety of needs, providing the power to reshape our world and	Original	200mW laser diode 940 nM 200mW LD5033 80km* opnext ps7055 LE7062 laser DFB chip 1310nm 2.5G LB7962 10G APD chip HL6530MG Photodiode, 1550nm, butterfly package	PDF
LD5033 Abstract: opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G Contextual Info: Optodevices Opnext Lights It Up Opnext is paving the way to a future of exciting laser developments and ground breaking applications. Our industry heritage, future-focused thinking and deep commitment to research and development help us anticipate and meet	Original	OPD-010908 LD5033 opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G	PDF