HBT 01 - 01 G Search Results

Contextual Info: Document Number: MMG5004N Rev. 0, 8/2006 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMG5004NR2 WLAN Power Amplifier 4.9-5.9 GHz, 24 dB, 23 dBm 802.11a WLAN POWER AMPLIFIER InGaP HBT CASE 1483-01 QFN 3x3

39E2527A

Contextual Info: MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit Specifications are subject to change without notice. Outline Drawing DESCRIPTION 6.0 6.0 30 29 28 27 26 25 24 23 22 21 39E2527A Lot. No JAPAN 11 12 13 14 15 16 17 18 19 20 InGaP HBT Device

39E2527A

Abstract: GRM155B11E103K GRM155B11H102K spectrum emission mask MITSUBISHI Microwave PW2100 GRM32EB31C476K grm188B31E105K metal detector plans wimax spectrum mask
Contextual Info: MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit Specifications are subject to change without notice. Outline Drawing DESCRIPTION 6.0 6.0 30 29 28 27 26 25 24 23 22 21 39E2527A Lot. No JAPAN 11 12 13 14 15 16 17 18 19 20 InGaP HBT Device

Contextual Info: Mitsubishi Semiconductors Preliminary MGFS38E2527-01 2.5 - 2.7GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E2527 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • •

HBT 01 05

Contextual Info: Mitsubishi Semiconductors MGFS38E3336-01 3.3 - 3.6GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E3336 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • • • • •

GRM31CB30J476K

Abstract: MGFS38E2325 RPC03T
Contextual Info: Mitsubishi Semiconductors MGFS38E2325-01 2.3 - 2.5GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E2325 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • • • • •

Contextual Info: Mitsubishi Semiconductors MGFS38E3336-01 3.3 - 3.6GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E3336 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • • • • •

erb1885c2d

Contextual Info: 2.3-2.7 GHz InGaP HBT 8W Linear Power Amplifier CHV2720-QJ November 2007 - Rev 01-Nov-07 Features P1dB, 8W Power Gain, 12 dB Efficiency, 25% @ 1W Positive Voltage Supply, +5V to +12V Integrated Active Bias Circuit Control Voltage Allows Different Current Settings

HBT 01 05G

Abstract: trans-impendance CH-6805 HRXM40A 10 gb PIN receiver
Contextual Info: HRXM40A 40 Gb/s Optical Receiver REV 09/01 Features InGaAs-pin-photodiode with InP-HBT-preamplifier Bitrates up to 40 Gb/s 14-pin butterfly module with k-connector, SMF pigtail Low power consumption Product Description HRXM40A modules are high-speed fiber-optical receivers

HBT 01 05G

Abstract: InP HBT transistor HRXC40A inp transistor CH-6805
Contextual Info: HRXC40A 40 Gb/s Optical Receiver REV 09/01 Features InGaAs-pin-photodiode with InP-HBT-preamplifier High bandwidth Bitrates up to 40 Gb/s Low power consumption Product Description HRXC40A chips are high-speed fiber-optical receivers for high-capacity fiber-optical communication networks with

CGB7289-BD

Abstract: CGB7289-SC CGB7289-SC-0G00 CGB7289-SC-0G0T CGB7289-SP-0G00 CGB7289-SP-0G0T PB-CGB7289-SC-0000 PB-CGB7289-SP-0000
Contextual Info: DC-2.5 GHz InGaP HBT Matched Gain Block Amplifier September 2006 - Rev 01-Sep-06 CGB7289-SC Features Functional Block Diagram SOT-89 41.0 dBm Output IP3 @ 2140 MHz 21.0 dB Gain @ 900 MHz 13.3 dB Gain @ 2140 MHz 23.7 dBm P1dB @ 2140 MHz Low Performance Variation Over Temperature

CGB7289-BD

Abstract: CGB7289-SC CGB7289-SC-0G00 CGB7289-SC-0G0T CGB7289-SP-0G00 CGB7289-SP-0G0T PB-CGB7289-SC-0000 PB-CGB7289-SP-0000
Contextual Info: DC-2.5 GHz InGaP HBT Matched Gain Block Amplifier September 2006 - Rev 01-Sep-06 CGB7289-SC Features Functional Block Diagram SOT-89 41.0 dBm Output IP3 @ 2140 MHz 21.0 dB Gain @ 900 MHz 13.3 dB Gain @ 2140 MHz 23.7 dBm P1dB @ 2140 MHz Low Performance Variation Over Temperature

CGB7001-BD

Abstract: CGB7001-SC CGB7001-SC-0G00 CGB7001-SC-0G0T CGB7001-SP-0G00 CGB7001-SP-0G0T MCH185A101JK PB-CGB7001-SC-0000 PB-CGB7001-SP-0000
Contextual Info: DC-6.0 GHz InGaP HBT, MMIC or Packaged Matched Gain Block Amplifier September 2006 - Rev 01-Sep-06 CGB7001-SC -BD Features Functional Block Diagram (SOT-89) Low Operating Voltage: 5V 28.0 dBm Output IP3 @ 850 MHz 3.3 dB Noise Figure @ 850 MHz 20.5 dB Gain @ 850 MHz

CGB7017-SC

Abstract: CGB7017-SC-0G00 CGB7017-SC-0G0T MCH185A101JK PB-CGB7017-SC-0000
Contextual Info: DC-8.0 GHz InGaP HBT Packaged Matched Gain Block Amplifier October 2008 - Rev 01-Oct-08 CGB7017-SC Features Functional Block Diagram SOT-89 Low Operating Voltage: 5V 33.8 dBm Output IP3 @ 850 MHz 3.3 dB Noise Figure @ 850 MHz 23.1 dB Gain @ 850 MHz, 19.5 dB @ 6 GHz

Contextual Info: MITSUBISHI SEMICONDUCTOR MGFS39E3336-01 3.3-3.6GHz HBT Integrated Circuit Specifications are subject to change without notice. Outline Drawing DESCRIPTION 6.0 Lot. No JAPAN 30 29 28 27 26 25 24 23 22 21 11 12 13 14 15 16 17 18 19 20 6.0 39E3336 30 29 28

39E3336

Abstract: MGFS39E3336 SWT-9 GRM188B31E105KA75 spectrum emission mask wimax MGFS39E3336-01 GRM155B11H1 160kO GRM188B31E
Contextual Info: MITSUBISHI SEMICONDUCTOR MGFS39E3336-01 3.3-3.6GHz HBT Integrated Circuit Specifications are subject to change without notice. Outline Drawing DESCRIPTION 6.0 Lot. No JAPAN 30 29 28 27 26 25 24 23 22 21 11 12 13 14 15 16 17 18 19 20 6.0 39E3336 30 29 28

NJM2900

Abstract: NJM4556 NJM4587 NJM2048 NJM2049 NJM2359 NJM3414 NJM3415 NJMREF-01 NJU7283
Contextual Info: NJM4587 N JM R EF-01 NJM2359 NJM4556 NJM3414 NJM3415 NJM2048 NJM2049 NJM2900 NJM3900 NJU7212 N JU 7283> < -X « ij r > r f tS S ,« NJM4556A NJM3414A NJM3414A m 2 I S B A 1) »ititi *^7 >7" 2 » A 0 * m íií^ r> 7 — >F n —/HBtëS 2 ¡ÜSX'f 4 W A 'i t t t - K * ^ r> y

HBT 00 01

Abstract: IBM43RF0100 HBT 01 05G HBT 01 05 HBT transistor mathcad ERJ-3GSYJ100 sige hbt HK10052N7S UMK105B102KW
Contextual Info: Application Note Evaluating the IBM43RF0100 SiGe HBT for CDMA Driver Applications at 1.9 GHz The IBM43RF0100 Silicon-Germanium SiGe High Dynamic Range, Low-Noise Transistor is a discrete heterojunction bipolar transistor (HBT) suitable for a wide range of RF driver applications including

TQM713019

Contextual Info: TQM713019 Data Sheet 3V HBT GaAs CDMA 4x4mm Power Amplifier Module Features Functional Block Diagram Vref 1 10 GND 9 GND Vmode 2 GND 3 8 RFout RFin 4 7 GND Vcc1 5 6 Vcc2 1 Bit Bias Control • • • • • • • • • • • Product Description The TQM713019 is a 3V, 2 stage GaAs HBT Power Amplifier Module designed for

1008HQ-33NXJLC

Abstract: ECP100D ECP100D-G ECP100D-PCB1960 ECP100D-PCB2140 ECP100D-PCB900
Contextual Info: ECP100D 1Watt, High Linearity InGaP HBT Amplifier Applications •   Final stage amplifiers for Repeaters Mobile Infrastructure Defense / Homeland Security Product Features  400 – 2300 MHz  18 dB Gain @ 900 MHz  +31.5 dBm P1dB  +46 dBm Output IP3

Contextual Info: CHV2244A PRELIMINARY Fully Integrated HBT Q-band VCO based on Ku-band Oscillator and Q-band Multiplier GaAs Monolithic Microwave IC Description The CHV2244A is a monolithic multifunction for frequency generation. It integrates a Ku-band oscillator with frequency control VCO , a Q-band filter

AWT6201

Abstract: GSM900 sm850
Contextual Info: AWT6201 GSM850/GSM900/DCS/PCS Quad Band PowerPlexerTM with Integrated Power Control FEATURES • • • • • • • • • • • • ANADIGICS developed technologies InGaP HBT/pHEMT/IPP Proven high volume low cost laminate/ overmold technology Integrated Power Control (CMOS)

LDJ2H825M03FA062

Abstract: AWB7225 DATE CODE MURATA Hybrid Couplers
Contextual Info: AWB7225 860 - 894 MHz Small-Cell Power Amplifier Module ADVANCED PRODUCT INFORMATION - Rev 0.1 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System

Contextual Info: AWB7127 2.11 GHz through 2.17 GHz Small-Cell Power Amplifier Module Data Sheet - Rev 2.0 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System