HB52F Search Results

512m pc133 SDRAM DIMM

Abstract: nec 2405 PC133 registered reference design
Contextual Info: HB52F649E1-75B 512 MB Registered SDRAM DIMM 64-Mword x 72-bit, 133 MHz Memory Bus, 1-Bank Module 18 pcs of 64 M × 4 Components PC133SDRAM E0021H20 (Ver. 2.0) Aug. 20, 2001 (K) Description The HB52F649E1 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed

Hitachi DSA00164

Abstract: Nippon capacitors
Contextual Info: a HB52F169E1-75F 128 MB Registered SDRAM DIMM 16-Mword x 72-bit, 133 MHz Memory Bus, 1-Bank Module 18 pcs of 16 M × 4 Components PC133 SDRAM ADE-203-1018A (Z) Preliminary Rev. 0.1 Jul. 30, 1999 Description The HB52F169E1 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed

Hitachi DSA00174

Abstract: Nippon capacitors
Contextual Info: HB52F328DC-75B/75BL 256 MB Unbuffered SDRAM S.O.DIMM 32-Mword x 64-bit, 133 MHz Memory Bus, 2-Bank Module 8 pcs of 16 M × 16 components PC133 SDRAM ADE-203-1187A(Z) Rev. 1.0 Oct. 20, 2000 Description The HB52F328DC is a 16M × 64 × 2 banks Synchronous Dynamic RAM Small Outline Dual In-line Memory

Hitachi DSA00276

Contextual Info: HB52F169E1-75F 128 MB Registered SDRAM DIMM 16-Mword x 72-bit, 133 MHz Memory Bus, 1-Bank Module 18 pcs of 16 M × 4 Components PC133 SDRAM ADE-203-1018B(Z) Rev. 1.0 Mar. 31, 2000 Description The HB52F169E1 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed

Contextual Info: HB52F168GB-B HB52D168GB-B EO 128 MB Unbuffered SDRAM Micro DIMM 16-Mword x 64-bit, 133/100 MHz Memory Bus, 1-Bank Module 4 pcs of 16 M × 16 components PC133/100 SDRAM L E0008H10 (1st edition) (Previous ADE-203-1219A (Z) Jan. 19, 2001 Description Pr The HB52F168GB and HB52D168GB are a 16M × 64 × 1 banks Synchronous Dynamic RAM Micro Dual

PC133-SDRAM

Abstract: Hitachi DSA002743 Nippon capacitors
Contextual Info: f HB52F169E1-75F 128 MB Registered SDRAM DIMM 16-Mword x 72-bit, 133 MHz Memory Bus, 1-Bank Module 18 pcs of 16 M × 4 Components PC133 SDRAM ADE-203-1018 (Z) Preliminary Rev. 0.0 Feb. 20, 1999 Description The HB52F169E1 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed

Contextual Info: HB52F328DC-75B/75BL 256 MB Unbuffered SDRAM S.O.DIMM 32-Mword x 64-bit, 133 MHz Memory Bus, 2-Bank Module 8 pcs of 16 M × 16 components PC133 SDRAM E0085H10 (1st edition) (Previous No. ADE-203-1187A(Z) Jan. 31, 2001 Description The HB52F328DC is a 16M × 64 × 2 banks Synchronous Dynamic RAM Small Outline Dual In-line Memory

Contextual Info: HB52F648EN-75B, HB52F649EN-75B 512 MB Unbuffered SDRAM DIMM, 133 MHz Memory Bus HB52F648EN 64-Mword x 64-bit, 2-Bank Module (16 pcs of 32 M × 8 Components) (HB52F649EN) 64-Mword × 72-bit, 2-Bank Module (18 pcs of 32 M × 8 Components) PC133 SDRAM E0012H10 (1st edition)

Hitachi DSA00164

Abstract: Nippon capacitors
Contextual Info: a HB52F88EM-75F, HB52F89EM-75F, HB52F168EN-75F, HB52F169EN-75F 64 MB Unbuffered SDRAM DIMM, 133 MHz Memory Bus HB52F88EM 8-Mword x 64-bit, 1-Bank Module (8 pcs of 8 M × 8 Components) (HB52F89EM) 8-Mword × 72-bit, 1-Bank Module (9 pcs of 8 M × 8 Components)

Hitachi DSA00176

Contextual Info: HB52F328DC-75B/75BL 256 MB Unbuffered SDRAM S.O.DIMM 32-Mword x 64-bit, 133 MHz Memory Bus, 2-Bank Module 8 pcs of 16 M × 16 components PC133 SDRAM ADJ-203-555A (Z) Rev. 1.0 ’00. 10. 20 概要 HB52F328DC は， 256M ビット SDRAM HM5225165BTT （TSOP パッケージ）

Contextual Info: HB52F649E1-75B 512 MB Registered SDRAM DIMM 64-Mword x 72-bit, 133 MHz Memory Bus, 1-Bank Module 18 pcs of 64 M x 4 Components PC 133 SDRAM HITACHI ADE-203-1080 (Z) Preliminary Rev. 0.0 Jun. 28, 1999 Description The HB52F649E1 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed

Contextual Info: HB52F168GB-B HB52D168GB-B 128 MB Unbuffered SDRAM Micro DIMM 16-Mword x 64-bit, 133/100 MHz Memory Bus, 1-Bank Module 4 pcs of 16 M × 16 components PC133/100 SDRAM E0008H10 (1st edition) (Previous ADE-203-1219A (Z) Jan. 19, 2001 Description The HB52F168GB and HB52D168GB are a 16M × 64 × 1 banks Synchronous Dynamic RAM Micro Dual

HM5225165BTT

Abstract: 4L126
Contextual Info: HB52F168GB-B HB52D168GB-B EO 128 MB Unbuffered SDRAM Micro DIMM 16-Mword x 64-bit, 133/100 MHz Memory Bus, 1-Bank Module 4 pcs of 16 M × 16 components PC133/100 SDRAM L E0008H10 (1st edition) (Previous ADE-203-1219A (Z) Jan. 19, 2001 Description Pr The HB52F168GB and HB52D168GB are a 16M × 64 × 1 banks Synchronous Dynamic RAM Micro Dual

Hitachi DSA002753

Abstract: Nippon capacitors
Contextual Info: x HB52F88EM-75F, HB52F89EM-75F, HB52F168EN-75F, HB52F169EN-75F 64 MB Unbuffered SDRAM DIMM, 133 MHz Memory Bus HB52F88EM 8-Mword x 64-bit, 1-Bank Module (8 pcs of 8 M × 8 Components) (HB52F89EM) 8-Mword × 72-bit, 1-Bank Module (9 pcs of 8 M × 8 Components)

Hitachi DSA00175

Contextual Info: HB52F89E1-75F 64 MB Registered SDRAM DIMM 8-Mword x 72-bit, 133 MHz Memory Bus, 1-Bank Module 9 pcs of 8 M × 8 Components PC133 SDRAM ADJ-203-409 (Z) 暫定仕様 ’99. 2. 20 Rev.0.0 概要 HB52F89E1 は，8 バイト DIMM（Dual In-line Memory Module）で 8 バイト CPU のメインメモリとして開

Hitachi DSA00174

Abstract: Nippon capacitors
Contextual Info: HB52F648EN-75B, HB52F649EN-75B 512 MB Unbuffered SDRAM DIMM, 133 MHz Memory Bus HB52F648EN 64-Mword x 64-bit, 2-Bank Module (16 pcs of 32 M × 8 Components) (HB52F649EN) 64-Mword × 72-bit, 2-Bank Module (18 pcs of 32 M × 8 Components) PC133 SDRAM ADE-203-1115A (Z)

Hitachi DSA00276

Abstract: Nippon capacitors
Contextual Info: HB52F88EM-75F, HB52F89EM-75F, HB52F168EN-75F, HB52F169EN-75F 64 MB Unbuffered SDRAM DIMM, 133 MHz Memory Bus HB52F88EM 8-Mword x 64-bit, 1-Bank Module (8 pcs of 8 M × 8 Components) (HB52F89EM) 8-Mword × 72-bit, 1-Bank Module (9 pcs of 8 M × 8 Components)

1115A

Abstract: HB52F648EN-75B HB52F649EN-75B HM5225805BTT PC133-SDRAM
Contextual Info: HB52F648EN-75B, HB52F649EN-75B 512 MB Unbuffered SDRAM DIMM, 133 MHz Memory Bus HB52F648EN 64-Mword x 64-bit, 2-Bank Module (16 pcs of 32 M × 8 Components) (HB52F649EN) 64-Mword × 72-bit, 2-Bank Module (18 pcs of 32 M × 8 Components) PC133 SDRAM E0012H10 (1st edition)

Hitachi DSA00164

Abstract: Nippon capacitors
Contextual Info: HB52F648EN-75B, HB52F649EN-75B 512 MB Unbuffered SDRAM DIMM, 133 MHz Memory Bus HB52F648EN 64-Mword x 64-bit, 2-Bank Module (16 pcs of 32 M × 8 Components) (HB52F649EN) 64-Mword × 72-bit, 2-Bank Module (18 pcs of 32 M × 8 Components) PC133 SDRAM ADE-203-1115A (Z)

Contextual Info: HB52F169E1-75F 128 MB Registered SDRAM DIMM 16-Mword x 72-bit, 133 MHz Memory Bus, 1-Bank Module 18 pcs of 16 M x 4 Components PC133 SDRAM H IT A C H I ADE-203-1018 (Z) Preliminary Rev. 0.0 Feb. 20, 1999 Description The HB52F169E1 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed

Hitachi DSA00276

Abstract: Nippon capacitors
Contextual Info: HB52F168GB-B HB52D168GB-B 128 MB Unbuffered SDRAM Micro DIMM 16-Mword x 64-bit, 133/100 MHz Memory Bus, 1-Bank Module 4 pcs of 16 M × 16 components PC133/100 SDRAM ADE-203-1219A (Z) Rev. 1.0 Oct. 27, 2000 Description The HB52F168GB and HB52D168GB are a 16M × 64 × 1 banks Synchronous Dynamic RAM Micro Dual

HM5225165BTT

Contextual Info: HB52F328DC-75B/75BL 256 MB Unbuffered SDRAM S.O.DIMM 32-Mword x 64-bit, 133 MHz Memory Bus, 2-Bank Module 8 pcs of 16 M × 16 components PC133 SDRAM E0085H10 (1st edition) (Previous No. ADE-203-1187A(Z) Jan. 31, 2001 Description The HB52F328DC is a 16M × 64 × 2 banks Synchronous Dynamic RAM Small Outline Dual In-line Memory

HM5225165BTT

Abstract: Hitachi DSA00190
Contextual Info: HB52F168GB-B HB52D168GB-B 128 MB Unbuffered SDRAM Micro DIMM 16-Mword x 64-bit, 133/100 MHz Memory Bus, 1-Bank Module 4 pcs of 16 M × 16 components PC133/100 SDRAM ADJ-203-586A (Z) Rev. 1.0 ’00. 10. 27 概要 HB52F168GB，HB52D168GB は，256M ビット SDRAM HM5225165BTT（TSOP パッケージ）を 4 個およ

PC133 registered reference design

Contextual Info: HB52F649E1-75B 512 MB Registered SDRAM DIMM 64-Mword x 72-bit, 133 MHz Memory Bus, 1-Bank Module 18 pcs of 64 M × 4 Components PC133SDRAM E0021H10 (1st edition) (Previous ADE-203-1080A (Z) Preliminary Jan. 31, 2001 Description The HB52F649E1 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed