HAT20 Search Results

HAT2085R

Contextual Info: HAT2085R Silicon N Channel MOS FET High Speed Power Switching REJ03G1181-0200 Previous: ADE-208-1232 Rev.2.00 Sep 07, 2005 Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> )

HAT2087R

Abstract: HAT2087R-EL-E
Contextual Info: HAT2087R Silicon N Channel MOS FET High Speed Power Switching REJ03G1182-0200 Previous: ADE-208-1233 Rev.2.00 Sep 07, 2005 Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> )

Hitachi DSA001651

Contextual Info: HAT2040R Silicon N Channel Power MOS FET Power Switching ADE-208-565 A Z Target specification 2nd. Edition Sept. 1, 1997 Features • Low on-resistance R DS(on) = 6.2 mΩ typ • Capable of 4 V gate drive • Low drive current • High density mounting

012AA

Contextual Info: A D E - 2 0 8 - 4 4 0 F Z HAT2022R Silicon N Channel Power MOS FET HITACHI Application 7h. Ed iti on J a n . 1996 SOP-8 High speed power switching Features • • • • Low on-resistance Capable of 4V gate drive Low drive current High density mounting

Hitachi DSA0076

Abstract: HAT2060RJ HAT2060R
Contextual Info: HAT2060R/HAT2060RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-936 Z 1st. Edition Mar. 2001 Features • • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting “J” Is for Automotive application

Hitachi DSA0076

Abstract: HAT2070R
Contextual Info: HAT2070R Silicon N Channel Power MOS FET Power Switching ADE-208-1226B Z 3rd. Edition Jan. 2001 Features • • • • Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R DS(on) = 11 mΩ typ (at VGS = 10V) Outline SOP-8

HAT2093R

Abstract: Hitachi DSA0076
Contextual Info: HAT2093R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-1237A Z 2nd. Edition Jan. 2001 Features • • • • Low on-resistance Capable of 4.5 V gate drive Low drive current High density mounting Outline SOP-8 8 5 7 6 3 1 2 4 5 6 D D

SC-527-8A

Abstract: Hitachi DSA0073 HAT2005F SC-5278 PCH-1
Contextual Info: HAT2005F Silicon N Channel Power MOS FET Application SOP–8 Power switching 8 5 7 6 Features • • • • 5 6 7 8 D D D D Low on–resistance Capable of 2.5V gate drive Low drive current High density mounting 3 1 2 4 G 1 2, 3 4 5, 6, 7, 8 Ordering Information

Hitachi DSA002759

Contextual Info: HAT2024R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-494 C 4th. Edition Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline HAT2024R Absolute Maximum Ratings Ta = 25°C

Hitachi DSA002752

Contextual Info: HAT2043R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-668D Z 5th. Edition February 1999 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 3 1 2 7 8 D D

Hitachi DSA002731

Contextual Info: HAT2039R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-667C Z 4th. Edition Mar. 2001 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 34 1 2 7 8 D D

Hitachi DSA00276

Contextual Info: HAT2029R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-525D Z 5th. Edition Feb. 1999 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 3 1 2 4 5 6 D D

Hitachi DSA002719

Contextual Info: HAT2037T Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-530 B Z 3rd. Edition July 1997 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline HAT2037T Absolute Maximum Ratings (Ta = 25°C)

Hitachi DSA002752

Contextual Info: HAT2052T Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-724C Z 4th. Edition February 1999 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP–8 87 65 8 D 1 D 4

Hitachi DSA002759

Contextual Info: HAT2053M Silicon N Channel Power MOS FET Power Switching ADE-208-755B Z Preliminary, 3rd. Edition Dec. 1, 1998 Features • • • • Low on-resistance Low drive current High density mounting 2.5V gate drive device can be driven from 3V source Outline TSOP–6

Hitachi DSA002759

Contextual Info: HAT2019R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-481 C 4th. Edition Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline HAT2019R Absolute Maximum Ratings Ta = 25°C

Hitachi DSA002752

Contextual Info: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition February 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting

Hitachi DSA0074

Abstract: HAT2009F
Contextual Info: HAT2009F Silicon N Channel Power MOS FET Application SOP–8 Power switching 8 Features • • • • Low on–resistance Capable of 2.5V gate drive Low drive current High density mounting 5 6 D D 7 8 D D Ordering Information Hitachi Code FP–8D ————————————————————

HAT2020R

Abstract: MS-012AA Hitachi DSA00396
Contextual Info: HAT2020R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-439 J Z 11th. Edition February 1999 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 6 7 8 D D D D

PTZZ0005DA-A

Abstract: HAT2099H-EL-E HAT2099H
Contextual Info: HAT2099H Silicon N Channel Power MOS FET Power Switching REJ03G1187-0500 Previous: ADE-208-1432C Rev.5.00 Sep 07, 2005 Features • • • • Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS (on) = 2.9 mΩ typ. (at VGS = 10 V)

Contextual Info: Preliminary Datasheet HAT2068R R07DS0871EJ0600 Previous: REJ03G1176-0500 Rev.6.00 Aug 23, 2012 Silicon N Channel Power MOS FET Power Switching Features •    Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance

Hitachi DSA00280

Contextual Info: HAT2050T Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-660A Z 2nd. Edition Feb. 1999 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline TSSOP–8 87 8 D 1 D 4 G 65 12

Hitachi DSA00280

Contextual Info: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting

Hitachi DSA00280

Contextual Info: HAT2054M Silicon N Channel Power MOS FET Power Switching ADE-208-756B Z Preliminary 3rd. Edition Dec. 1998 Features • • • • Low on-resistance Low drive current High density mounting 4.5V gate drive device can be driven from 5V source Outline TSOP–6